| Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ... Scientific Reports 8 (1), 2018 | 68 | 2018 |
| Dielectric breakdown in single-crystal hexagonal boron nitride A Ranjan, N Raghavan, M Holwill, K Watanabe, T Taniguchi, ... ACS Applied Electronic Materials 3 (8), 3547-3554, 2021 | 47 | 2021 |
| Random telegraph noise in 2D hexagonal boron nitride dielectric films A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ... Applied Physics Letters 112 (13), 2018 | 31 | 2018 |
| Sb2Te3 and Its Superlattices: Optimization by Statistical Design JK Behera, X Zhou, A Ranjan, RE Simpson ACS applied materials & interfaces 10 (17), 15040-15050, 2018 | 24 | 2018 |
| Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey Microelectronics Reliability 64, 172-178, 2016 | 24 | 2016 |
| Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ... IEEE Electron Device Letters 40 (8), 1321-1324, 2019 | 22 | 2019 |
| CAFM based Spectroscopy of Stress-Induced Defects in HfO2 with Experimental Evidence of the Clustering Model and Metastable Vacancy Defect State AR Nagarajan Raghavan, Shubhakar Kalya, Ramesh Thamankar, Joel Molina, Sean ... 2016 IEEE International Reliability Physics Symposium (IRPS), 2016 | 18 | 2016 |
| Localized probing of dielectric breakdown in multilayer hexagonal boron nitride A Ranjan, SJ O’Shea, M Bosman, N Raghavan, KL Pey ACS Applied Materials & Interfaces 12 (49), 55000-55010, 2020 | 14 | 2020 |
| Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature J Molina, R Torres, A Ranjan, KL Pey Materials Science in Semiconductor Processing 66, 191-199, 2017 | 14 | 2017 |
| Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ... Microelectronics Reliability 64, 204-209, 2016 | 14 | 2016 |
| Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2018 | 12 | 2018 |
| Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ... Journal of Applied Physics 122 (2), 2017 | 12 | 2017 |
| Molecular bridges link monolayers of hexagonal boron nitride during dielectric breakdown A Ranjan, SJ O’Shea, A Padovani, T Su, P La Torraca, YS Ang, ... ACS Applied Electronic Materials 5 (2), 1262-1276, 2023 | 11 | 2023 |
| The interplay between drift and electrical measurement in conduction atomic force microscopy A Ranjan, KL Pey, SJ O'Shea Review of Scientific Instruments 90 (7), 073701, 2019 | 10 | 2019 |
| Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy A Ranjan, H Xu, C Wang, J Molina, X Wu, H Zhang, L Sun, J Chu, KL Pey Applied Materials Today 31, 101739, 2023 | 9 | 2023 |
| Random Telegraph Noise Nano-Spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques A Ranjan, N Raghavan, K Shubhakar, SJ O’Shea, KL Pey Noise in Nanoscale Semiconductor Devices, 417-440, 2020 | 6 | 2020 |
| An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis K Shubhakar, M Bosman, OA Neucheva, YC Loke, N Raghavan, ... Microelectronics Reliability 55 (9-10), 1450-1455, 2015 | 6 | 2015 |
| Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy A Ranjan, FM Puglisi, J Molina-Reyes, P Pavan, SJ O’Shea, N Raghavan, ... ACS Applied Electronic Materials 4 (8), 3909-3921, 2022 | 5 | 2022 |
| Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators T Zanotti, A Ranjan, SJ O’Shea, N Raghavan, R Thamankar, KL Pey, ... IEEE Transactions on Device and Materials Reliability, 2024 | 3 | 2024 |
| Correlation of dielectric breakdown and nanoscale adhesion in silicon dioxide thin films A Ranjan, SJ O’Shea, M Bosman, J Molina, N Raghavan, KL Pey 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 3 | 2020 |
KL PEYProfessor, Singapore University of Technology and DesignVerified email at sutd.edu.sg