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Fang-ming Jing
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Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
X Zhang, RZ Hu, HO Li, FM Jing, Y Zhou, RL Ma, M Ni, G Luo, G Cao, ...
Physical Review Letters 124 (25), 257701, 2020
472020
Transverse mode-encoded quantum gate on a silicon photonic chip
LT Feng, M Zhang, X Xiong, D Liu, YJ Cheng, FM Jing, XZ Qi, Y Chen, ...
Physical Review Letters 128 (6), 060501, 2022
322022
Gate‐controlled quantum dots based on 2D materials
FM Jing, ZZ Zhang, GQ Qin, G Luo, G Cao, HO Li, XX Song, GP Guo
Advanced Quantum Technologies 5 (6), 2100162, 2022
192022
Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing
K Wang, HO Li, G Luo, X Zhang, FM Jing, RZ Hu, Y Zhou, H Liu, GL Wang, ...
Europhysics Letters 130 (2), 27001, 2020
112020
Tunable p–n junction barriers in few-electron bilayer graphene quantum dots
FM Jing, GQ Qin, ZZ Zhang, XX Song, GP Guo
Applied Physics Letters 123 (18), 2023
12023
Improvement in the peak mobility of silicon metal-oxide-semiconductor field-effect transistors for quantum dots
K Wang, HO Li, G Luo, X Zhang, FM Jing, RZ Hu, Y Zhou, H Liu, GL Wang, ...
arXiv, arXiv: 1905.01581, 2019
2019
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