| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013 | 325 | 2013 |
| MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014 | 235 | 2014 |
| Rational combination of covalent-organic framework and nano TiO2 by covalent bonds to realize dramatically enhanced photocatalytic activity CC Li, MY Gao, XJ Sun, HL Tang, H Dong, FM Zhang Applied Catalysis B: Environmental 266, 118586, 2020 | 203 | 2020 |
| Construction of Z-scheme Cu2O/Cu/AgBr/Ag photocatalyst with enhanced photocatalytic activity and stability under visible light J He, DW Shao, LC Zheng, LJ Zheng, DQ Feng, JP Xu, XH Zhang, ... Applied Catalysis B: Environmental 203, 917-926, 2017 | 150 | 2017 |
| Boosting visible-light-driven hydrogen evolution of covalent organic frameworks through compositing with MoS 2: a promising candidate for noble-metal-free photocatalysts MY Gao, CC Li, HL Tang, XJ Sun, H Dong, FM Zhang Journal of Materials Chemistry A 7 (35), 20193-20200, 2019 | 148 | 2019 |
| Realistic metal–graphene contact structures C Gong, S McDonnell, X Qin, A Azcatl, H Dong, YJ Chabal, K Cho, ... ACS nano 8 (1), 642-649, 2014 | 120 | 2014 |
| Enhanced photocatalytic activities of g-C3N4 with large specific surface area via a facile one-step synthesis process D Feng, Y Cheng, J He, L Zheng, D Shao, W Wang, W Wang, F Lu, ... Carbon 125, 454-463, 2017 | 110 | 2017 |
| Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ... Journal of Applied Physics 116 (1), 2014 | 79 | 2014 |
| A crystalline oxide passivation for Al2O3/AlGaN/GaN X Qin, H Dong, J Kim, RM Wallace Applied Physics Letters 105 (14), 2014 | 73 | 2014 |
| Enhanced photocatalytic performances and magnetic recovery capacity of visible-light-driven Z-scheme ZnFe2O4/AgBr/Ag photocatalyst J He, Y Cheng, T Wang, D Feng, L Zheng, D Shao, W Wang, W Wang, ... Applied Surface Science 440, 99-106, 2018 | 72 | 2018 |
| Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 99 (17), 2011 | 65 | 2011 |
| Electronic structures, magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2 M Wu, X Yao, Y Hao, H Dong, Y Cheng, H Liu, F Lu, W Wang, K Cho, ... Physics Letters A 382 (2-3), 111-115, 2018 | 64 | 2018 |
| Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ... Applied Physics Letters 100 (14), 2012 | 61 | 2012 |
| A class of monolayer metal halogenides MX2: electronic structures and band alignments F Lu, W Wang, X Luo, X Xie, Y Cheng, H Dong, H Liu, WH Wang Applied Physics Letters 108 (13), 2016 | 60 | 2016 |
| Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 102 (13), 2013 | 53 | 2013 |
| GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices Z Zhang, R Cao, C Wang, HB Li, H Dong, W Wang, F Lu, Y Cheng, X Xie, ... ACS Applied Materials and Interfaces 7 (9), 5141, 2015 | 50 | 2015 |
| Indium diffusion through high-k dielectrics in high-k/InP stacks H Dong, W Cabrera, RV Galatage, S KC, B Brennan, X Qin, S McDonnell, ... Applied Physics Letters 103 (6), 2013 | 48 | 2013 |
| In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN B Brennan, X Qin, H Dong, J Kim, RM Wallace Applied Physics Letters 101 (21), 2012 | 47 | 2012 |
| Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy H Dong, C Gong, R Addou, S McDonnell, A Azcatl, X Qin, W Wang, ... ACS applied materials & interfaces 9 (44), 38977-38983, 2017 | 42 | 2017 |
| Surface and interfacial reaction study of half cycle atomic layer deposited Al2O3 on chemically treated InP surfaces B Brennan, H Dong, D Zhernokletov, J Kim, RM Wallace Applied Physics Express 4 (12), 125701, 2011 | 42 | 2011 |
Robert M. WallaceUniversity of Texas at DallasVerified email at utdallas.edu