A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% J Yoneda, K Takeda, T Otsuka, T Nakajima, MR Delbecq, G Allison, ... Nature nanotechnology 13 (2), 102-106, 2018 | 921 | 2018 |
A fault-tolerant addressable spin qubit in a natural silicon quantum dot K Takeda, J Kamioka, T Otsuka, J Yoneda, T Nakajima, MR Delbecq, ... Science advances 2 (8), e1600694, 2016 | 274 | 2016 |
Radio-frequency-detected fast charge sensing in undoped silicon quantum dots A Noiri, K Takeda, J Yoneda, T Nakajima, T Kodera, S Tarucha Nano Letters 20 (2), 947-952, 2020 | 85 | 2020 |
Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots G Yamahata, T Kodera, HOH Churchill, K Uchida, CM Marcus, S Oda Physical Review B—Condensed Matter and Materials Physics 86 (11), 115322, 2012 | 79 | 2012 |
Quantum non-demolition readout of an electron spin in silicon J Yoneda, K Takeda, A Noiri, T Nakajima, S Li, J Kamioka, T Kodera, ... Nature communications 11 (1), 1144, 2020 | 63 | 2020 |
Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate K Horibe, T Kodera, S Oda Applied Physics Letters 106 (8), 2015 | 46 | 2015 |
Semiconductor quantum dots for electron spin qubits WG Van Der Wiel, M Stopa, T Kodera, T Hatano, S Tarucha New journal of physics 8 (2), 28, 2006 | 44 | 2006 |
Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift K Takeda, J Yoneda, T Otsuka, T Nakajima, MR Delbecq, G Allison, ... npj Quantum Information 4 (1), 54, 2018 | 40 | 2018 |
Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots K Takeda, T Obata, Y Fukuoka, WM Akhtar, J Kamioka, T Kodera, S Oda, ... Applied Physics Letters 102 (12), 2013 | 38 | 2013 |
Enhancement of Rashba coupling in vertical InGaAs/GaAs quantum dots SM Huang, AO Badrutdinov, L Serra, T Kodera, T Nakaoka, N Kumagai, ... Physical Review B—Condensed Matter and Materials Physics 84 (8), 085325, 2011 | 37 | 2011 |
High-frequency manipulation of few-electron double quantum dots—toward spin qubits T Kodera, WG van der Wiel, K Ono, S Sasaki, T Fujisawa, S Tarucha Physica E: Low-dimensional Systems and Nanostructures 22 (1-3), 518-521, 2004 | 35 | 2004 |
Quantitative Estimation of Exchange Interaction Energy<? format?> Using Two-Electron Vertical Double Quantum Dots T Kodera, K Ono, Y Kitamura, Y Tokura, Y Arakawa, S Tarucha Physical review letters 102 (14), 146802, 2009 | 32 | 2009 |
Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K G Yamahata, T Kodera, H Mizuta, K Uchida, S Oda Applied physics express 2 (9), 095002, 2009 | 30 | 2009 |
Coulomb-mediated antibunching of an electron pair surfing on sound J Wang, H Edlbauer, A Richard, S Ota, W Park, J Shim, A Ludwig, ... Nature Nanotechnology 18 (7), 721-726, 2023 | 29 | 2023 |
Charge sensing and spin-related transport property of p-channel silicon quantum dots Y Yamaoka, K Iwasaki, S Oda, T Kodera Japanese Journal of Applied Physics 56 (4S), 04CK07, 2017 | 29 | 2017 |
Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures S Ihara, A Andreev, DA Williams, T Kodera, S Oda Applied Physics Letters 107 (1), 2015 | 28 | 2015 |
Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor K Horibe, T Kodera, S Oda Applied Physics Letters 106 (5), 2015 | 28 | 2015 |
Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration N Lee, R Tsuchiya, G Shinkai, Y Kanno, T Mine, T Takahama, ... Applied Physics Letters 116 (16), 2020 | 25 | 2020 |
Preparing multipartite entangled spin qubits via pauli spin blockade S Bugu, F Ozaydin, T Ferrus, T Kodera Scientific Reports 10 (1), 3481, 2020 | 25 | 2020 |
Dual function of single electron transistor coupled with double quantum dot: Gating and charge sensing T Kambara, T Kodera, Y Arakawa, S Oda Japanese Journal of Applied Physics 52 (4S), 04CJ01, 2013 | 24 | 2013 |