| Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer MH Doan, Y Jin, S Adhikari, S Lee, J Zhao, SC Lim, YH Lee ACS nano 11 (4), 3832-3840, 2017 | 202 | 2017 |
| Ferromagnetic Order at Room Temperature in Monolayer WSe2 Semiconductor via Vanadium Dopant SJ Yun, DL Duong, DM Ha, K Singh, TL Phan, W Choi, YM Kim, YH Lee Advanced Science 7 (9), 1903076, 2020 | 201 | 2020 |
| Two‐terminal multibit optical memory via van der Waals heterostructure MD Tran, H Kim, JS Kim, MH Doan, TK Chau, QA Vu, JH Kim, YH Lee Advanced Materials 31 (7), 1807075, 2019 | 200 | 2019 |
| Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena MD Tran, JH Kim, H Kim, MH Doan, DL Duong, YH Lee ACS applied materials & interfaces 10 (12), 10580-10586, 2018 | 48 | 2018 |
| Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes MH Doan, S Kim, JJ Lee, H Lim, F Rotermund, K Kim AIP Advances 2 (2), 2012 | 35 | 2012 |
| Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors J Jiang, MH Doan, L Sun, H Kim, H Yu, MK Joo, SH Park, H Yang, ... Advanced Science 7 (4), 1902964, 2020 | 32 | 2020 |
| Super-resolution nanolithography of two-dimensional materials by anisotropic etching DR Danielsen, A Lyksborg-Andersen, KES Nielsen, BS Jessen, TJ Booth, ... ACS Applied Materials & Interfaces 13 (35), 41886-41894, 2021 | 30 | 2021 |
| Room‐Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2 MH Doan, Y Jin, TK Chau, MK Joo, YH Lee Advanced Materials 31 (17), 1900154, 2019 | 20 | 2019 |
| Facile doping in two-dimensional transition-metal dichalcogenides by UV light TH Ly, Q Deng, MH Doan, LJ Li, J Zhao ACS applied materials & interfaces 10 (35), 29893-29901, 2018 | 18 | 2018 |
| Minimizing trap charge density towards an ideal diode in graphene–silicon Schottky solar cell S Adhikari, C Biswas, MH Doan, ST Kim, C Kulshreshtha, YH Lee ACS applied materials & interfaces 11 (1), 880-888, 2018 | 17 | 2018 |
| Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature S Adhikari, JH Kim, B Song, MH Doan, MD Tran, L Gomez, H Kim, HZ Gul, ... Advanced Materials Interfaces 7 (21), 2000835, 2020 | 14 | 2020 |
| Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant SJ Yun, DL Duong, MH Doan, K Singh, TL Phan, W Choi, YM Kim, ... arXiv preprint arXiv:1806.06479, 2018 | 13 | 2018 |
| Schottky-barrier quantum well in two-dimensional semiconductor nanotransistors J Jiang, MH Doan, L Sun, MK Ghimire, H Kim, SJ Yun, H Yang, DL Duong, ... Materials Today Physics 15, 100275, 2020 | 10 | 2020 |
| Photoluminescence of ZnO nano-tetrapods TTH Nguyen, MH Doan, XD Ngo, TTH Nguyen VNU Journal of Science: Mathematics-Physics 24 (1), 2008 | 7 | 2008 |
| Pseudo‐Hydrodynamic Flow of Quasiparticles in Semimetal WTe2 at Room Temperature Y Choi, M Doan, LLP Ngoc, J Lee, GM Choi, MN Chernodub Small 19 (27), 2206604, 2023 | 5 | 2023 |
| Modulation of optoelectric properties of monolayer transition metal dichalcogenides placed on a metal pattern S Roy, MH Doan, J Kim, SK Kang, GH Ahn, HS Lee, SJ Yun Journal of the Korean Physical Society 78, 693-699, 2021 | 5 | 2021 |
| Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High‐Efficiency InGaN/GaN Blue Light Emitting Diodes MH Doan, J Lee Advances in Condensed Matter Physics 2014 (1), 671210, 2014 | 4 | 2014 |
| Visualizing thickness-dependent magnetic textures in few-layer Cr2Ge2Te6 A Vervelaki, K Bagani, D Jetter, MH Doan, TK Chau, B Gross, ... Communications Materials 5 (1), 40, 2024 | 3 | 2024 |
| Fermi level depinning in two-dimensional materials using a fluorinated bilayer graphene barrier C Sun, C Xiang, R Hong, F Zhang, TJ Booth, P Bøggild, MH Doan ACS Applied Electronic Materials 4 (8), 3955-3961, 2022 | 3 | 2022 |
| Cathode-luminescence study of photonic crystal green InxGa1− xN/InyGa1− yN light emitting diodes ES Choi, MH Doan, HPT Nguyen, S Kim, H Lim, F Rotermund, JJ Lee Journal of crystal growth 311 (3), 863-866, 2009 | 3 | 2009 |