| On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors H Wong, H Iwai Microelectronic Engineering 83 (10), 1867-1904, 2006 | 513 | 2006 |
| Low-frequency noise study in electron devices: review and update H Wong Microelectronics Reliability 43 (4), 585-599, 2003 | 160 | 2003 |
| Electronic structure and charge transport properties of amorphous Ta2O5 films VA Shvets, VS Aliev, DV Gritsenko, SS Shaimeev, EV Fedosenko, ... Journal of non-crystalline solids 354 (26), 3025-3033, 2008 | 147 | 2008 |
| Conduction mechanisms in MOS gate dielectric films BL Yang, PT Lai, H Wong Microelectronics Reliability 44 (5), 709-718, 2004 | 134 | 2004 |
| Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment TV Perevalov, AV Shaposhnikov, VA Gritsenko, H Wong, JH Han, CW Kim Jetp Letters 85, 165-168, 2007 | 129 | 2007 |
| Defects in silicon oxynitride gate dielectric films H Wong, VA Gritsenko Microelectronics Reliability 42 (4-5), 597-605, 2002 | 117 | 2002 |
| Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations TV Perevalov, VA Gritsenko, SB Erenburg, AM Badalyan, H Wong, ... Journal of Applied Physics 101 (5), 2007 | 109 | 2007 |
| Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures VA Gritsenko, H Wong, JB Xu, RM Kwok, IP Petrenko, BA Zaitsev, ... Journal of applied physics 86 (6), 3234-3240, 1999 | 107 | 1999 |
| The road to miniaturization H Wong, H Iwai Physics World 18 (9), 40, 2005 | 104 | 2005 |
| Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride VA Gritsenko, RWM Kwok, H Wong, JB Xu Journal of non-crystalline solids 297 (1), 96-101, 2002 | 94 | 2002 |
| XPS study of the thermal instability of HfO2 prepared by Hf sputtering in oxygen with RTA N Zhan, MC Poon, CW Kok, KL Ng, H Wong Journal of the Electrochemical Society 150 (10), F200, 2003 | 91 | 2003 |
| Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen H Wong, KL Ng, N Zhan, MC Poon, CW Kok Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 84 | 2004 |
| Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance VA Gritsenko, KS Zhuravlev, AD Milov, H Wong, RWM Kwok, JB Xu Thin Solid Films 353 (1-2), 20-24, 1999 | 82 | 1999 |
| Recent developments in silicon optoelectronic devices H Wong 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No …, 2002 | 81 | 2002 |
| Nanometer Cmos F Schwierz, H Wong, JJ Liou Pan Stanford Publishing, 2010 | 80 | 2010 |
| X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics J Zhang, H Wong, D Yu, K Kakushima, H Iwai AIP Advances 4 (11), 2014 | 76 | 2014 |
| Nano-CMOS gate dielectric engineering H Wong Crc Press, 2017 | 69 | 2017 |
| On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology H Wong, H Iwai Microelectronic engineering 138, 57-76, 2015 | 69 | 2015 |
| Luminescence of intrinsic and extrinsic defects in hafnium oxide films AA Rastorguev, VI Belyi, TP Smirnova, LV Yakovkina, MV Zamoryanskaya, ... Physical Review B—Condensed Matter and Materials Physics 76 (23), 235315, 2007 | 69 | 2007 |
| Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectric H Wong, B Sen, V Filip, MC Poon Thin Solid Films 504 (1-2), 192-196, 2006 | 64 | 2006 |
Kakushima KuniyukiTokyo Institute of TechnologyVerified email at m.titech.ac.jp