Articles with public access mandates - F. C-P. MassabuauLearn more
Not available anywhere: 1
Progress and applications of (Cu–) Ag–Bi–I semiconductors, and their derivatives, as next-generation lead-free materials for photovoltaics, detectors and memristors
H Zhu, I Turkevych, H Lohan, P Liu, RW Martin, FCP Massabuau, ...
International Materials Reviews 69 (1), 19-62, 2024
Mandates: UK Engineering and Physical Sciences Research Council, European Commission …
Available somewhere: 63
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ...
Applied Physics Letters 107 (13), 2015
Mandates: UK Engineering and Physical Sciences Research Council
X-ray diffraction analysis of cubic zincblende III-nitrides
M Frentrup, LY Lee, SL Sahonta, MJ Kappers, F Massabuau, P Gupta, ...
Journal of Physics D: Applied Physics 50 (43), 433002, 2017
Mandates: UK Engineering and Physical Sciences Research Council, UK Research & Innovation
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied Physics Letters 105 (11), 2014
Mandates: Australian Research Council, UK Engineering and Physical Sciences Research …
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
RA Oliver, FCP Massabuau, MJ Kappers, WA Phillips, EJ Thrush, ...
Applied Physics Letters 103 (14), 2013
Mandates: UK Engineering and Physical Sciences Research Council
A peeling approach for integrated manufacturing of large monolayer h-BN crystals
R Wang, DG Purdie, Y Fan, FCP Massabuau, P Braeuninger-Weimer, ...
ACS nano 13 (2), 2114-2126, 2019
Mandates: UK Engineering and Physical Sciences Research Council, European Commission
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 2015
Mandates: UK Engineering and Physical Sciences Research Council, European Commission
Thick, adherent diamond films on AlN with low thermal barrier resistance
S Mandal, C Yuan, F Massabuau, JW Pomeroy, J Cuenca, H Bland, ...
ACS applied materials & interfaces 11 (43), 40826-40834, 2019
Mandates: UK Engineering and Physical Sciences Research Council, European Commission
Carrier localization in the vicinity of dislocations in InGaN
F Massabuau, P Chen, MK Horton, SL Rhode, CX Ren, TJ O'Hanlon, ...
Journal of Applied Physics 121 (1), 2017
Mandates: UK Engineering and Physical Sciences Research Council
Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN
EJW Smith, AH Piracha, D Field, JW Pomeroy, GR Mackenzie, Z Abdallah, ...
Carbon 167, 620-626, 2020
Mandates: UK Engineering and Physical Sciences Research Council
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ...
Journal of Crystal Growth 487, 23-27, 2018
Mandates: UK Engineering and Physical Sciences Research Council
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ...
Journal of Crystal Growth 528, 125254, 2019
Mandates: UK Engineering and Physical Sciences Research Council
Structure and strain relaxation effects of defects in InxGa1− xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 2014
Mandates: UK Engineering and Physical Sciences Research Council
Crystalline interlayers for reducing the effective thermal boundary resistance in GaN-on-diamond
DE Field, JA Cuenca, M Smith, SM Fairclough, FCP Massabuau, ...
ACS Applied Materials & Interfaces 12 (48), 54138-54145, 2020
Mandates: UK Engineering and Physical Sciences Research Council
Atomic layer deposited α-Ga2O3 solar-blind photodetectors
J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ...
Journal of Physics D: Applied Physics 52 (47), 475101, 2019
Mandates: UK Engineering and Physical Sciences Research Council
Dislocations in AlGaN: Core structure, atom segregation, and optical properties
FCP Massabuau, SL Rhode, MK Horton, TJ O’Hanlon, A Kovács, ...
Nano letters 17 (8), 4846-4852, 2017
Mandates: UK Engineering and Physical Sciences Research Council, European Commission
Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching
FCP Massabuau, PH Griffin, HP Springbett, Y Liu, RV Kumar, T Zhu, ...
APL Materials 8 (3), 2020
Mandates: UK Engineering and Physical Sciences Research Council
Integrated wafer scale growth of single crystal metal films and high quality graphene
OJ Burton, FCP Massabuau, VP Veigang-Radulescu, B Brennan, ...
ACS nano 14 (10), 13593-13601, 2020
Mandates: UK Engineering and Physical Sciences Research Council
Thermal stress modelling of diamond on GaN/III-Nitride membranes
JA Cuenca, MD Smith, DE Field, FCP Massabuau, S Mandal, J Pomeroy, ...
Carbon 174, 647-661, 2021
Mandates: UK Engineering and Physical Sciences Research Council
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
MJ Davies, P Dawson, FCP Massabuau, RA Oliver, MJ Kappers, ...
Applied Physics Letters 105 (9), 2014
Mandates: UK Engineering and Physical Sciences Research Council
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