| Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures H Hlaing, CH Kim, F Carta, CY Nam, RA Barton, N Petrone, J Hone, ... Nano letters 15 (1), 69-74, 2015 | 123 | 2015 |
| A flexible and fast PyTorch toolkit for simulating training and inference on analog crossbar arrays MJ Rasch, D Moreda, T Gokmen, M Le Gallo, F Carta, C Goldberg, ... 2021 IEEE 3rd international conference on artificial intelligence circuits …, 2021 | 104 | 2021 |
| 3D cross-point phase-change memory for storage-class memory HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky Journal of Physics D: Applied Physics 52 (47), 473002, 2019 | 96 | 2019 |
| ALD-based confined PCM with a metallic liner toward unlimited endurance W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016 | 85 | 2016 |
| Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ... 2019 Symposium on VLSI Technology, T66-T67, 2019 | 63 | 2019 |
| An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017 | 57 | 2017 |
| Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018 | 51 | 2018 |
| A study on OTS-PCM pillar cell for 3-D stackable memory WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ... IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018 | 42 | 2018 |
| Templating and charge injection from copper electrodes into solution-processed organic field-effect transistors CH Kim, H Hlaing, F Carta, Y Bonnassieux, G Horowitz, I Kymissis ACS applied materials & interfaces 5 (9), 3716-3721, 2013 | 34 | 2013 |
| Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ... 2019 Symposium on VLSI Technology, T60-T61, 2019 | 24 | 2019 |
| Si incorporation into AsSeGe chalcogenides for high thermal stability, high endurance and extremely low Vth drift 3D stackable cross-point memory HY Cheng, IT Kuo, WC Chien, CW Yeh, YC Chou, N Gong, L Gignac, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 21 | 2020 |
| High endurance self-heating OTS-PCM pillar cell for 3D stackable memory CW Yeh, WC Chien, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ... 2018 IEEE Symposium on VLSI Technology, 205-206, 2018 | 19 | 2018 |
| Using the IBM analog in-memory hardware acceleration kit for neural network training and inference M Le Gallo, C Lammie, J Büchel, F Carta, O Fagbohungbe, C Mackin, ... APL Machine Learning 1 (4), 2023 | 16 | 2023 |
| Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization N Gong, MJ Rasch, SC Seo, A Gasasira, P Solomon, V Bragaglia, ... 2022 International Electron Devices Meeting (IEDM), 33.7. 1-33.7. 4, 2022 | 16 | 2022 |
| A no-verification multi-level-cell (MLC) operation in cross-point OTS-PCM N Gong, W Chien, Y Chou, C Yeh, N Li, H Cheng, C Cheng, I Kuo, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 16 | 2020 |
| Sequential lateral solidification of silicon thin films on cu BEOL-integrated wafers for monolithic 3-D integration F Carta, SM Gates, AB Limanov, JS Im, DC Edelstein, I Kymissis IEEE Transactions on Electron Devices 62 (11), 3887-3891, 2015 | 15 | 2015 |
| Bimorph actuator with monolithically integrated CMOS OFET control F Carta, YJ Hsu, J Sarik, I Kymissis Organic Electronics 14 (1), 286-290, 2013 | 14 | 2013 |
| Integration of confined phase change memory with threshold switching material RL Bruce, F Carta, W Kim, CH Lam US Patent 10,892,413, 2021 | 11 | 2021 |
| Barrier layer for selector devices and memory devices using same HY Cheng, HL Lung, RL Bruce, F Carta US Patent App. 16/355,292, 2020 | 8 | 2020 |
| Fast offset corrected in-memory training MJ Rasch, F Carta, O Fagbohungbe, T Gokmen arXiv preprint arXiv:2303.04721, 2023 | 7 | 2023 |