| Direct-bandgap emission from hexagonal Ge and SiGe alloys EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ Van Tilburg, C Mao, ... Nature 580 (7802), 205-209, 2020 | 348 | 2020 |
| Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ... Nano letters 17 (3), 1538-1544, 2017 | 100 | 2017 |
| Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir Applied Physics Letters 112 (25), 2018 | 94 | 2018 |
| Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters MS Seifner, A Dijkstra, J Bernardi, A Steiger-Thirsfeld, M Sistani, ... ACS nano 13 (7), 8047-8054, 2019 | 49 | 2019 |
| Kinetic control of morphology and composition in Ge/GeSn core/shell nanowires S Assali, R Bergamaschini, E Scalise, MA Verheijen, M Albani, A Dijkstra, ... ACS nano 14 (2), 2445-2455, 2020 | 26 | 2020 |
| Nanowire polymer transfer for enhanced solar cell performance and lower cost A Cavalli, A Dijkstra, JEM Haverkort, EPAM Bakkers Nano-Structures & Nano-Objects 16, 59-62, 2018 | 23 | 2018 |
| Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Semiconductors S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ... Physical Review Applied 15 (2), 024031, 2021 | 22 | 2021 |
| Unveiling planar defects in hexagonal group IV materials EMT Fadaly, A Marzegalli, Y Ren, L Sun, A Dijkstra, D De Matteis, ... Nano Letters 21 (8), 3619-3625, 2021 | 21 | 2021 |
| Optical properties of direct band gap group IV semiconductors A Dijkstra | 3 | 2021 |
| Epitaxial GeSn and its integration in MIR optoelectronics S Assali, A Attiaoui, MRM Atalla, A Dijkstra, A Kumar, S Mukherjee, S Abdi, ... CLEO: Science and Innovations, SM3M. 2, 2020 | 3 | 2020 |
| Mid-infrared emission and absorption in strained and relaxed GeSn semiconductors S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ... arXiv e-prints, arXiv: 2004.13858, 2020 | 3 | 2020 |
| Light emission from direct bandgap hexagonal SiGe JEM Haverkort, Y Ren, A Dijkstra, E Fadaly, MA Verheijen, G Reithmaier, ... Integrated Photonics Research, Silicon and Nanophotonics, ITu4I. 5, 2018 | 3 | 2018 |
| Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation) D Busse, E Fadaly, VT van Lange, JR Suckert, A Dijkstra, M van Tilburg, ... Novel In-Plane Semiconductor Lasers XIX 11301, 113010K, 2020 | 1 | 2020 |
| New opportunities with nanowires E Bakkers, HIT Hauge, A Li, S Assali, A Dijkstra, R Tucker, Y Ren, ... 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 124-125, 2016 | 1 | 2016 |
| Gate-tunable Bose-Fermi mixture in a strongly correlated moir\'e bilayer electron system AB Mhenni, W Kadow, MJ Metelski, AO Paulus, A Dijkstra, K Watanabe, ... arXiv preprint arXiv:2410.07308, 2024 | | 2024 |
| Gate-tunable Bose-Fermi mixture in a strongly correlated moiré bilayer electron system A Ben Mhenni, W Kadow, MJ Metelski, AO Paulus, A Dijkstra, K Watanabe, ... arXiv e-prints, arXiv: 2410.07308, 2024 | | 2024 |
| Nanosecond Carrier Lifetime of Hexagonal Ge VT van Lange, A Dijkstra, EMT Fadaly, WHJ Peeters, MAJ van Tilburg, ... ACS photonics 11 (10), 4258-4267, 2024 | | 2024 |
| Light-emitting or light-absorbing component S Botti, F Bechstedt, JEM Haverkort, EPAM Bakkers, E Fadaly, A Dijkstra US Patent 12,065,601, 2024 | | 2024 |
| Optical Matrix Element of Hexagonal Ge VT Lange, A Dijkstra, EMT Fadaly, WHJ Peeters, MAJ Tilburg, E Bakkers, ... CLEO: Science and Innovations, SM4H. 7, 2023 | | 2023 |
| Towards a Hexagonal SiGe Semiconductor Laser. MAJ Tilburg, A Dijkstra, EMT Fadaly, VT Lange, MA Verheijen, JR Suckert, ... CLEO: Science and Innovations, SM3M. 6, 2020 | | 2020 |
J.E.M.HaverkortTechnische Universiteit EindhovenVerified email at tue.nl