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Shinhyun Choi
Shinhyun Choi
Verified email at kaist.ac.kr
Title
Cited by
Cited by
Year
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ...
Nature communications 5 (1), 4232, 2014
6792014
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
S Choi, SH Tan, Z Li, Y Kim, C Choi, PY Chen, H Yeon, S Yu, J Kim
Nature materials 17 (4), 335-340, 2018
6422018
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ...
Nature 544 (7650), 340-343, 2017
5672017
Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity
S Kim, C Du, P Sheridan, W Ma, SH Choi, WD Lu
Nano letters 15 (3), 2203-2211, 2015
5622015
Comprehensive physical model of dynamic resistive switching in an oxide memristor
S Kim, SH Choi, W Lu
ACS nano 8 (3), 2369-2376, 2014
4792014
Stochastic memristive devices for computing and neuromorphic applications
S Gaba, P Sheridan, J Zhou, S Choi, W Lu
Nanoscale 5 (13), 5872-5878, 2013
3352013
Experimental demonstration of feature extraction and dimensionality reduction using memristor networks
S Choi, JH Shin, J Lee, P Sheridan, WD Lu
Nano letters 17 (5), 3113-3118, 2017
1982017
Oxide heterostructure resistive memory
Y Yang, SH Choi, W Lu
Nano letters 13 (6), 2908-2915, 2013
1982013
Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing
SO Park, H Jeong, J Park, J Bae, S Choi
Nature Communications 13 (1), 2888, 2022
1642022
Data clustering using memristor networks
S Choi, P Sheridan, WD Lu
Scientific reports 5 (1), 10492, 2015
1532015
Random telegraph noise and resistance switching analysis of oxide based resistive memory
S Choi, Y Yang, W Lu
Nanoscale 6 (1), 400-404, 2014
1362014
Tuning resistive switching characteristics of tantalum oxide memristors through Si doping
S Kim, SH Choi, J Lee, WD Lu
ACS nano 8 (10), 10262-10269, 2014
1322014
Recent advances and future prospects for memristive materials, devices, and systems
MK Song, JH Kang, X Zhang, W Ji, A Ascoli, I Messaris, AS Demirkol, ...
ACS nano 17 (13), 11994-12039, 2023
1042023
Conductive-bridging random-access memories for emerging neuromorphic computing
JH Cha, SY Yang, J Oh, S Choi, S Park, BC Jang, W Ahn, SY Choi
Nanoscale 12 (27), 14339-14368, 2020
622020
Retention failure analysis of metal-oxide based resistive memory
S Choi, J Lee, S Kim, WD Lu
Applied Physics Letters 105 (11), 2014
602014
The gate injection-based field-effect synapse transistor with linear conductance update for online training
S Seo, B Kim, D Kim, S Park, TR Kim, J Park, H Jeong, SO Park, T Park, ...
Nature Communications 13 (1), 6431, 2022
492022
Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel
S Park, Y Jeong, HJ Jin, J Park, H Jang, S Lee, W Huh, H Cho, HG Shin, ...
ACS nano 14 (9), 12064-12071, 2020
492020
Retention Secured Nonlinear and Self‐Rectifying Analog Charge Trap Memristor for Energy‐Efficient Neuromorphic Hardware
G Kim, S Son, H Song, JB Jeon, J Lee, WH Cheong, S Choi, KM Kim
Advanced Science 10 (3), 2205654, 2023
352023
Reliable multilevel memristive neuromorphic devices based on amorphous matrix via quasi-1D filament confinement and buffer layer
SH Choi, SO Park, S Seo, S Choi
Science Advances 8 (3), eabj7866, 2022
352022
Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays
SH Tan, P Lin, H Yeon, S Choi, Y Park, J Kim
APL Materials 6 (12), 2018
312018
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Articles 1–20