Follow
Dr Igor Marko
Dr Igor Marko
Verified email at glasgow.ac.uk - Homepage
Title
Cited by
Cited by
Year
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ...
Applied Physics Letters 102 (24), 2013
1802013
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs∕ GaAs quantum-dot lasers
IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 2005
1092005
Optical gain in GaAsBi/GaAs quantum well diode lasers
IP Marko, CA Broderick, S Jin, P Ludewig, W Stolz, K Volz, JM Rorison, ...
Scientific reports 6 (1), 28863, 2016
812016
The role of auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure
IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
IEEE Journal of selected topics in quantum electronics 9 (5), 1300-1307, 2003
812003
Recombination mechanisms and band alignment of GaAs1− xBix/GaAs light emitting diodes
N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ...
Applied Physics Letters 100 (5), 2012
792012
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ...
Journal of Physics D: Applied Physics 47 (34), 345103, 2014
782014
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
732011
Progress toward III–V bismide alloys for near-and midinfrared laser diodes
IP Marko, SJ Sweeney
IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-12, 2017
682017
Reduced bilateral recombination by functional molecular interface engineering for efficient inverted perovskite solar cells
B Li, Y Xiang, KDGI Jayawardena, D Luo, Z Wang, X Yang, JF Watts, ...
Nano Energy 78, 105249, 2020
632020
Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
IP Marko, Z Batool, K Hild, SR Jin, N Hossain, TJC Hosea, JP Petropoulos, ...
Applied Physics Letters 101 (22), 2012
632012
Mid-infrared optoelectronics: materials, devices, and applications
E Tournié, L Cerutti
Woodhead publishing, 2019
602019
Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs)
AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin, MC Amann, SJ Sweeney
Scientific Reports 6 (1), 19595, 2016
572016
Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration
TD Eales, IP Marko, S Schulz, E O’Halloran, S Ghetmiri, W Du, Y Zhou, ...
Scientific reports 9 (1), 14077, 2019
562019
Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers
IP Marko, AR Adams, SJ Sweeney, DJ Mowbray, MS Skolnick, HY Liu, ...
IEEE Journal of Selected Topics in Quantum Electronics 11 (5), 1041-1047, 2005
512005
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ...
Semiconductor Science and Technology 30 (9), 094008, 2015
462015
Temperature dependence of the gain in p-doped and intrinsic 1.3 μm InAs∕ GaAs quantum dot lasers
NF Masse, SJ Sweeney, IP Marko, AR Adams, N Hatori, M Sugawara
Applied physics letters 89 (19), 2006
462006
A multifaceted ferrocene interlayer for highly stable and efficient lithium doped spiro‐OMeTAD‐based perovskite solar cells
T Webb, X Liu, RJE Westbrook, S Kern, MT Sajjad, S Jenatsch, ...
Advanced Energy Materials 12 (26), 2200666, 2022
452022
Suppressing interfacial recombination with a strong‐interaction surface modulator for efficient inverted perovskite solar cells
B Li, J Deng, JA Smith, P Caprioglio, K Ji, D Luo, JD McGettrick, ...
Advanced Energy Materials 12 (48), 2202868, 2022
382022
Importance of Auger recombination in InAs 1.3 µm quantum dot lasers
IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
Electronics Letters 39 (1), 1, 2003
382003
The Importance of Recombination via Excited States in InAs/GaAs m Quantum-Dot Lasers
MT Crowley, IP Marko, NF Masse, AD Andreev, S Tomic, SJ Sweeney, ...
IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 799-807, 2009
352009
The system can't perform the operation now. Try again later.
Articles 1–20