Rachel Oliver

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Colin HumphreysQueen Mary University of LondonVerified email at qmul.ac.uk
Tongtong ZhuUniversity of CambridgeVerified email at cam.ac.uk
F. C-P. MassabuauUniversity of StrathclydeVerified email at strath.ac.uk
Philip DawsonUniversity of ManchesterVerified email at manchester.ac.uk
Fabrice OehlerCNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)Verified email at c2n.upsaclay.fr
James Thomas GriffithsResearch associate, University of CambridgeVerified email at cam.ac.uk
G A D BriggsProfessor of Nanomaterials, University of OxfordVerified email at materials.ox.ac.uk
Stefan SchulzSenior Staff Researcher, Tyndall National InstituteVerified email at tyndall.ie
Matthew J. DaviesAttolight AGVerified email at attolight.com
Simon HammersleyResearch Associate, University of ManchesterVerified email at manchester.ac.uk
James H RiceLecturer in Physics, University College DublinVerified email at ucd.ie
Dr Joy SumnerReader in Energy Materials, Cranfield UniversityVerified email at cranfield.ac.uk
Paul BagotUniversity of OxfordVerified email at materials.ox.ac.uk
Danny SutherlandUniversity of ManchesterVerified email at manchester.ac.uk
Michelle MoramSenior Lecturer and Royal Society University Research Fellow, Imperial College LondonVerified email at imperial.ac.uk
Michael P. MoodyDepartment of Materials, University of OxfordVerified email at materials.ox.ac.uk
Robert MartinProfessor of Physics, Strathclyde UniversityVerified email at strath.ac.uk
Tomas L. MartinAssociate Professor in Materials Physics, Department of Physics, University of BristolVerified email at bristol.ac.uk
András KovácsErnst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum JülichVerified email at fz-juelich.de
Benjamin P.L. ReidPostdoctoral Research Assistant, University of OxfordVerified email at physics.ox.ac.uk

Rachel Oliver

Professor of Materials Science, Cambridge University

Verified email at cam.ac.uk - Homepage

Gallium nitride advanced microscopy quantum technology


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Advances in AFM for the electrical characterization of semiconductors RA Oliver Reports on Progress in Physics 71 (7), 076501, 2008	243	2008
Carrier localization mechanisms in InGaN/GaN quantum wells D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B—Condensed Matter and Materials Physics 83 (11), 115321, 2011	218	2011
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ... Applied physics letters 90 (6), 2007	207	2007
Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface B Zhao, Y Lian, L Cui, G Divitini, G Kusch, E Ruggeri, F Auras, W Li, ... Nature electronics 3 (11), 704-710, 2020	192	2020
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ... Applied Physics Letters 83 (4), 755-757, 2003	178	2003
Atom probe tomography today A Cerezo, PH Clifton, MJ Galtrey, CJ Humphreys, TF Kelly, DJ Larson, ... Materials Today 10 (12), 36-42, 2007	157	2007
Threading dislocation reduction in (0 0 01) GaN thin films using SiNx interlayers MJ Kappers, R Datta, RA Oliver, FDG Rayment, ME Vickers, ... Journal of Crystal Growth 300 (1), 70-74, 2007	155	2007
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, TJ Badcock, ... Journal of Applied Physics 111 (8), 2012	141	2012
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 RA Oliver, MJ Kappers, J Sumner, R Datta, CJ Humphreys Journal of Crystal Growth 289 (2), 506-514, 2006	141	2006
Growth modes in heteroepitaxy of InGaN on GaN RA Oliver, MJ Kappers, CJ Humphreys, GAD Briggs Journal of applied physics 97 (1), 2005	137	2005
Three-dimensional atom probe analysis of green-and blue-emitting InxGa1− xN∕ GaN multiple quantum well structures MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, PH Clifton, D Larson, ... Journal of Applied Physics 104 (1), 2008	125	2008
Microstructural origins of localization in InGaN quantum wells RA Oliver, SE Bennett, T Zhu, DJ Beesley, MJ Kappers, DW Saxey, ... Journal of Physics D: Applied Physics 43 (35), 354003, 2010	114	2010
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures FCP Massabuau, SL Sahonta, L Trinh-Xuan, S Rhode, TJ Puchtler, ... Applied Physics Letters 101 (21), 2012	108	2012
Role of gross well-width fluctuations in bright, green-emitting single InGaN∕ GaN quantum well structures NK van der Laak, RA Oliver, MJ Kappers, CJ Humphreys Applied physics letters 90 (12), 2007	97	2007
Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports H Sugime, S Esconjauregui, J Yang, L D'Arsié, RA Oliver, S Bhardwaj, ... Applied Physics Letters 103 (7), 2013	89	2013
Unintentional doping in GaN T Zhu, RA Oliver Physical Chemistry Chemical Physics 14 (27), 9558-9573, 2012	89	2012
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells P Dawson, S Schulz, RA Oliver, MJ Kappers, CJ Humphreys Journal of Applied Physics 119 (18), 2016	87	2016
Low threshold, room-temperature microdisk lasers in the blue spectral range I Aharonovich, A Woolf, KJ Russell, T Zhu, N Niu, MJ Kappers, RA Oliver, ... Applied Physics Letters 103 (2), 2013	83	2013
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ... Applied Physics Letters 107 (13), 2015	82	2015
Nanoscale solid-state quantum computing A Ardavan, M Austwick, SC Benjamin, GAD Briggs, TJS Denni s, ... Philosophical Transactions of the Royal Society of London. Series A …, 2003	80	2003

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