| Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020 | 686 | 2020 |
| Spatially resolved steady-state negative capacitance AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ... Nature 565 (7740), 468-471, 2019 | 344 | 2019 |
| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 188 | 2022 |
| Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ... IEEE Electron Device Letters 39 (2), 300-303, 2017 | 172 | 2017 |
| Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ... IEEE Electron Device Letters 40 (6), 993-996, 2019 | 131 | 2019 |
| One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon SS Cheema, N Shanker, CH Hsu, A Datar, J Bae, D Kwon, S Salahuddin Advanced Electronic Materials 8 (6), 2100499, 2022 | 100 | 2022 |
| Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ... IEEE Electron Device Letters 41 (2), 240-243, 2019 | 63 | 2019 |
| Wakeup-free and endurance-robust ferroelectric field-effect transistor memory using high pressure annealing MC Nguyen, S Kim, K Lee, JY Yim, R Choi, D Kwon IEEE Electron Device Letters 42 (9), 1295-1298, 2021 | 60 | 2021 |
| Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors JH Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin IEEE Electron Device Letters 41 (11), 1637-1640, 2020 | 57 | 2020 |
| Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ... 2018 IEEE Symposium on VLSI Technology, 53-54, 2018 | 54 | 2018 |
| Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ... IEEE Electron Device Letters 41 (1), 179-182, 2019 | 47 | 2019 |
| Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET W Shin, JH Bae, S Kim, K Lee, D Kwon, BG Park, D Kwon, JH Lee IEEE Electron Device Letters 43 (1), 13-16, 2021 | 45 | 2021 |
| Response speed of negative capacitance FinFETs D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ... 2018 IEEE Symposium on VLSI Technology, 49-50, 2018 | 44 | 2018 |
| A nitrided interfacial oxide for interface state improvement in hafnium zirconium oxide-based ferroelectric transistor technology AJ Tan, AK Yadav, K Chatterjee, D Kwon, S Kim, C Hu, S Salahuddin IEEE Electron Device Letters 39 (1), 95-98, 2017 | 41 | 2017 |
| Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ... IEEE Electron Device Letters 40 (9), 1423-1426, 2019 | 38 | 2019 |
| Method of initializing 3D non-volatile memory device BG Park, DW Kwon, DB Kim, SH Lee US Patent 9,685,235, 2017 | 36 | 2017 |
| Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ... Nanoscale 14 (6), 2177-2185, 2022 | 34 | 2022 |
| Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles C Mahata, H Algadi, M Ismail, D Kwon, S Kim Journal of Materials Science & Technology 95, 203-212, 2021 | 34 | 2021 |
| Capacitive neural network using charge-stored memory cells for pattern recognition applications D Kwon, IY Chung IEEE Electron device letters 41 (3), 493-496, 2020 | 34 | 2020 |
| Ferroelectric-gate field-effect transistor memory with recessed channel K Lee, JH Bae, S Kim, JH Lee, BG Park, D Kwon IEEE Electron Device Letters 41 (8), 1201-1204, 2020 | 32 | 2020 |
