| Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ... IEEE Transactions on electron devices 48 (3), 535-542, 2001 | 604 | 2001 |
| Electron transport characteristics of GaN for high temperature device modeling JD Albrecht, RP Wang, PP Ruden, M Farahmand, KF Brennan Journal of Applied Physics 83 (9), 4777-4781, 1998 | 445 | 1998 |
| High field electron transport properties of bulk ZnO JD Albrecht, PP Ruden, S Limpijumnong, WRL Lambrecht, KF Brennan Journal of Applied Physics 86 (12), 6864-6867, 1999 | 256 | 1999 |
| Ensemble Monte Carlo study of electron transport in wurtzite InN E Bellotti, BK Doshi, KF Brennan, JD Albrecht, PP Ruden Journal of Applied Physics 85 (2), 916-923, 1999 | 223 | 1999 |
| Lattice thermal conductivity in β-Ga2O3 from first principles MD Santia, N Tandon, JD Albrecht Applied Physics Letters 107 (4), 2015 | 200 | 2015 |
| Electron spin injection at a Schottky contact JD Albrecht, DL Smith Physical Review B 66 (11), 113303, 2002 | 149 | 2002 |
| 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ... Applied physics letters 113 (1), 2018 | 98 | 2018 |
| Spin-polarized electron transport at ferromagnet/semiconductor Schottky contacts JD Albrecht, DL Smith Physical Review B 68 (3), 035340, 2003 | 97 | 2003 |
| Near-junction thermal management for wide bandgap devices A Bar-Cohen, JD Albrecht, JJ Maurer 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-5, 2011 | 85 | 2011 |
| 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ... Applied Physics Letters 112 (8), 2018 | 82 | 2018 |
| Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors B Jogai, JD Albrecht, E Pan journal of Applied physics 94 (6), 3984-3989, 2003 | 80 | 2003 |
| AlGaN/GaN heterostructure field-effect transistor model including thermal effects JD Albrecht, PP Ruden, SC Binari, MG Ancona IEEE Transactions on Electron Devices 47 (11), 2031-2036, 2000 | 75 | 2000 |
| THz electronics projects at DARPA: Transistors, TMICs, and amplifiers JD Albrecht, MJ Rosker, HB Wallace, TH Chang 2010 IEEE MTT-S International Microwave Symposium, 1118-1121, 2010 | 60 | 2010 |
| Effective properties of multilayered functionally graded multiferroic composites X Wang, E Pan, JD Albrecht, WJ Feng Composite Structures 87 (3), 206-214, 2009 | 54 | 2009 |
| Monte Carlo calculation of electron transport properties of bulk AlN JD Albrecht, RP Wang, PP Ruden, M Farahmand, KF Brennan Journal of applied physics 83 (3), 1446-1449, 1998 | 52 | 1998 |
| Characterization and performance of the Apollon short-focal-area facility following its commissioning at 1 PW level K Burdonov, A Fazzini, V Lelasseux, J Albrecht, P Antici, Y Ayoul, ... Matter and Radiation at Extremes 6 (6), 2021 | 51 | 2021 |
| Materials theory based modeling of wide band gap semiconductors: from basic properties to devices KF Brennan, E Bellotti, M Farahmand, J Haralson II, PP Ruden, ... Solid-State Electronics 44 (2), 195-204, 2000 | 51 | 2000 |
| Molecular beam epitaxial growth of high-quality GaN nanocolumns JE Van Nostrand, KL Averett, R Cortez, J Boeckl, CE Stutz, NA Sanford, ... Journal of crystal growth 287 (2), 500-503, 2006 | 50 | 2006 |
| A chip-first microwave package using multimaterial aerosol jet printing MT Craton, X Konstantinou, JD Albrecht, P Chahal, J Papapolymerou IEEE Transactions on Microwave Theory and Techniques 68 (8), 3418-3427, 2020 | 47 | 2020 |
| A Ka/V Band-Switchable LNA With 2.8/3.4 dB Noise Figure AA Nawaz, JD Albrecht, AÇ Ulusoy IEEE Microwave and Wireless Components Letters 29 (10), 662-664, 2019 | 47 | 2019 |
