Articles with public access mandates - Fabrice OehlerLearn more
Not available anywhere: 6
The effect of dislocations on the efficiency of InGaN/GaN solar cells
Y Zhang, MJ Kappers, D Zhu, F Oehler, F Gao, CJ Humphreys
Solar Energy Materials and Solar Cells 117, 279-284, 2013
Mandates: UK Engineering and Physical Sciences Research Council
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
M Morassi, L Largeau, F Oehler, HG Song, L Travers, FH Julien, ...
Crystal Growth & Design 18 (4), 2545-2554, 2018
Mandates: European Commission
Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds
F Oehler, ME Vickers, MJ Kappers, CJ Humphreys, RA Oliver
Japanese Journal of Applied Physics 52 (8S), 08JB29, 2013
Mandates: UK Engineering and Physical Sciences Research Council
Van der Waals epitaxial growth of few layers WSe2 on GaP (111) B
N Chapuis, A Mahmoudi, C Coinon, D Troadec, D Vignaud, G Patriarche, ...
2D Materials, 2024
Mandates: Agence Nationale de la Recherche
Mapping of Vibrational Modes Revealing a Strong and Tunable Coupling in Two Juxtaposed 3R-WSe2 Nanodrums
A Chiout, C Brochard-Richard, F Oehler, A Ouerghi, J Chaste
Nano Letters 24 (33), 10148-10154, 2024
Mandates: Agence Nationale de la Recherche
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride
M Bouaziz, A Mahmoudi, D Romanin, JC Girard, YJ Dappe, F Bertran, ...
Physical Review B 110 (4), 045441, 2024
Mandates: Agence Nationale de la Recherche
Available somewhere: 60
Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
Mandates: Higher Education Authority, Ireland, Science Foundation Ireland, UK …
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied physics letters 105 (11), 2014
Mandates: Australian Research Council, UK Engineering and Physical Sciences Research …
Interface dipole and band bending in the hybrid heterojunction
H Henck, Z Ben Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ...
Physical Review B 96 (11), 115312, 2017
Mandates: US National Science Foundation
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 2015
Mandates: UK Engineering and Physical Sciences Research Council, European Commission
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
C Ernandes, L Khalil, H Almabrouk, D Pierucci, B Zheng, J Avila, P Dudin, ...
npj 2D Materials and Applications 5 (1), 7, 2021
Mandates: US National Science Foundation, National Natural Science Foundation of China …
Structure and strain relaxation effects of defects in InxGa1− xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 2014
Mandates: UK Engineering and Physical Sciences Research Council
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver
Journal of Crystal Growth 383, 12-18, 2013
Mandates: UK Engineering and Physical Sciences Research Council
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
Ultramicroscopy 176, 93-98, 2017
Mandates: UK Engineering and Physical Sciences Research Council
In situ passivation of GaAsP nanowires
C Himwas, S Collin, P Rale, N Chauvin, G Patriarche, F Oehler, FH Julien, ...
Nanotechnology 28 (49), 495707, 2017
Mandates: European Commission
The microstructure of non-polar a-plane (11-2 0) InGaN quantum wells
JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ...
Journal of Applied Physics 119 (17), 175703, 2016
Mandates: Australian Research Council, UK Engineering and Physical Sciences Research …
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
JT Griffiths, T Zhu, F Oehler, RM Emery, WY Fu, BPL Reid, RA Taylor, ...
APL materials 2 (12), 2014
Mandates: UK Engineering and Physical Sciences Research Council
Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
MJ Wallace, PR Edwards, MJ Kappers, MA Hopkins, F Oehler, S Sivaraya, ...
Journal of Applied Physics 116 (3), 2014
Mandates: UK Engineering and Physical Sciences Research Council
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
TJ Badcock, P Dawson, MJ Davies, MJ Kappers, FCP Massabuau, ...
Journal of Applied Physics 115 (11), 2014
Mandates: UK Engineering and Physical Sciences Research Council
Observations of Rabi oscillations in a non-polar InGaN quantum dot
BPL Reid, C Kocher, T Zhu, F Oehler, R Emery, C Chan, RA Oliver, ...
Applied Physics Letters 104 (26), 2014
Mandates: UK Engineering and Physical Sciences Research Council
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