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Not available anywhere: 23
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire
T Li, W Guo, L Ma, W Li, Z Yu, Z Han, S Gao, L Liu, D Fan, Z Wang, ...
Nature Nanotechnology 16 (11), 1201-1207, 2021
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
A self‐healable, highly stretchable, and solution processable conductive polymer composite for ultrasensitive strain and pressure sensing
T Wang, Y Zhang, Q Liu, W Cheng, X Wang, L Pan, B Xu, H Xu
Advanced Functional Materials 28 (7), 1705551, 2018
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire
L Liu, T Li, L Ma, W Li, S Gao, W Sun, R Dong, X Zou, D Fan, L Shao, ...
Nature 605 (7908), 69-75, 2022
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix
W Meng, F Xu, Z Yu, T Tao, L Shao, L Liu, T Li, K Wen, J Wang, L He, ...
Nature Nanotechnology 16 (11), 1231-1236, 2021
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
2D single‐crystalline molecular semiconductors with precise layer definition achieved by floating‐coffee‐ring‐driven assembly
Q Wang, J Qian, Y Li, Y Zhang, D He, S Jiang, Y Wang, X Wang, L Pan, ...
Advanced Functional Materials 26 (19), 3191-3198, 2016
Mandates: National Natural Science Foundation of China
Graphene/organic semiconductor heterojunction phototransistors with broadband and bi‐directional photoresponse
J Han, J Wang, M Yang, X Kong, X Chen, Z Huang, H Guo, J Gou, S Tao, ...
Advanced materials 30 (49), 1804020, 2018
Mandates: National Natural Science Foundation of China
200 GHz maximum oscillation frequency in CVD graphene radio frequency transistors
Y Wu, X Zou, M Sun, Z Cao, X Wang, S Huo, J Zhou, Y Yang, X Yu, ...
ACS applied materials & interfaces 8 (39), 25645-25649, 2016
Mandates: National Natural Science Foundation of China
Precise, self-limited epitaxy of ultrathin organic semiconductors and heterojunctions tailored by van der Waals interactions
B Wu, Y Zhao, H Nan, Z Yang, Y Zhang, H Zhao, D He, Z Jiang, X Liu, Y Li, ...
Nano Letters 16 (6), 3754-3759, 2016
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Three-Dimensional Topological Insulator Bi2Te3/Organic Thin Film Heterojunction Photodetector with Fast and Wideband Response from 450 to 3500 Nanometers
M Yang, J Wang, Y Zhao, L He, C Ji, X Liu, H Zhou, Z Wu, X Wang, ...
ACS nano 13 (1), 755-763, 2018
Mandates: National Natural Science Foundation of China
Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors
Y Xu, T Liu, K Liu, Y Zhao, L Liu, P Li, A Nie, L Liu, J Yu, X Feng, F Zhuge, ...
Nature Materials 22 (9), 1078-1084, 2023
Mandates: National Natural Science Foundation of China
High-performance black phosphorus field-effect transistors with long-term air stability
D He, Y Wang, Y Huang, Y Shi, X Wang, X Duan
Nano letters 19 (1), 331-337, 2018
Mandates: US National Science Foundation, US Department of Defense, National Natural …
An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning
H Ning, Z Yu, Q Zhang, H Wen, B Gao, Y Mao, Y Li, Y Zhou, Y Zhou, ...
Nature nanotechnology 18 (5), 493-500, 2023
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China …
Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates
F Fei, Z Wei, Q Wang, P Lu, S Wang, Y Qin, D Pan, B Zhao, X Wang, ...
Nano Letters 15 (9), 5905-5911, 2015
Mandates: National Natural Science Foundation of China
Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free
Z Yu, H Wang, W Li, S Xu, X Song, S Wang, P Wang, P Zhou, Y Shi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2017
Mandates: National Natural Science Foundation of China
ZrO2 Ferroelectric FET for Non-volatile Memory Application
H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhong, C Duan, ...
IEEE Electron Device Letters 40 (9), 1419-1422, 2019
Mandates: National Natural Science Foundation of China
Synthesis, charge transport and device applications of graphene nanoribbons
H Shen, Y Shi, X Wang
Synthetic Metals 210, 109-122, 2015
Mandates: National Natural Science Foundation of China
Organic charge-transfer interface enhanced graphene hybrid phototransistors
X Liu, X Chen, J Yi, Z Luo, H Nan, H Guo, Z Ni, Y Ding, S Dai, X Wang
Organic Electronics 64, 22-26, 2019
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies
D Fan, W Li, H Qiu, Y Xu, S Gao, L Liu, T Li, F Huang, Y Mao, W Zhou, ...
Nature Electronics 6 (11), 879-887, 2023
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films through Interfacial Bound Charges
Y Zhu, H Ning, Z Yu, Q Pan, C Zhang, C Luo, X Tu, Y You, P Wang, X Wu, ...
Advanced Electronic Materials 5 (8), 1900554, 2019
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Unique Current-Direction-Dependent ON–OFF Switching in BiSbTeSe2 Topological Insulator-Based Spin Valve Transistors
M Zhang, X Wang, S Zhang, Y Gao, Z Yu, X Zhang, M Gao, F Song, J Du, ...
IEEE Electron Device Letters 37 (9), 1231-1233, 2016
Mandates: National Natural Science Foundation of China
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