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| High-mobility germanium-tin (GeSn) p-channel MOSFETs featuring metallic source/drain and sub-370 C process modules G Han, S Su, C Zhan, Q Zhou, Y Yang, L Wang, P Guo, W Wei, CP Wong, ... 2011 International Electron Devices Meeting, 16.7. 1-16.7. 3, 2011 | 110 | 2011 |
| III–V Multiple-Gate Field-Effect Transistors With High-MobilityChannel and Epi-Controlled Retrograde-Doped Fin HC Chin, X Gong, L Wang, HK Lee, L Shi, YC Yeo IEEE Electron Device Letters 32 (2), 146-148, 2010 | 85 | 2010 |
| Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn) Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ... 2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012 | 71 | 2012 |
| Germanium–tin p-channel tunneling field-effect transistor: Device design and technology demonstration Y Yang, G Han, P Guo, W Wang, X Gong, L Wang, KL Low, YC Yeo IEEE Transactions on Electron Devices 60 (12), 4048-4056, 2013 | 67 | 2013 |
| Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study Y Yang, K Lu Low, W Wang, P Guo, L Wang, G Han, YC Yeo Journal of Applied Physics 113 (19), 2013 | 61 | 2013 |
| Dopant Segregation and Nickel Stanogermanide Contact Formation onSource/Drain G Han, S Su, Q Zhou, P Guo, Y Yang, C Zhan, L Wang, W Wang, Q Wang, ... IEEE electron device letters 33 (5), 634-636, 2012 | 51 | 2012 |
| Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation L Wang, S Su, W Wang, X Gong, Y Yang, P Guo, G Zhang, C Xue, ... Solid-State Electronics 83, 66-70, 2013 | 44 | 2013 |
| Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer G Han, S Su, L Wang, W Wang, X Gong, Y Yang, P Guo, C Guo, G Zhang, ... 2012 Symposium on VLSI Technology (VLSIT), 97-98, 2012 | 42 | 2012 |
| Ohmic Contact Formation on N-TypeUsing Selenium or Sulfur Implant and Segregation Y Tong, G Han, B Liu, Y Yang, L Wang, W Wang, YC Yeo IEEE transactions on electron devices 60 (2), 746-752, 2013 | 34 | 2013 |
| Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs L Wang, G Han, S Su, Q Zhou, Y Yang, P Guo, W Wang, Y Tong, PSY Lim, ... Electrochemical and Solid-State Letters 15 (6), H179, 2012 | 34 | 2012 |
| Towards high performance Ge1−xSnx and In0.7Ga0.3As CMOS: A novel common gate stack featuring sub-400 °C Si2H6 passivation, single TaN metal gate … X Gong, S Su, B Liu, L Wang, W Wang, Y Yang, E Kong, B Cheng, G Han, ... 2012 Symposium on VLSI Technology (VLSIT), 99-100, 2012 | 32 | 2012 |
| Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS X Gong, G Han, B Liu, L Wang, W Wang, Y Yang, EYJ Kong, S Su, C Xue, ... IEEE transactions on electron devices 60 (5), 1640-1648, 2013 | 30 | 2013 |
| Germanium–TinJunction Formed Using Phosphorus Ion Implant and 400Rapid Thermal Anneal L Wang, S Su, W Wang, Y Yang, Y Tong, B Liu, P Guo, X Gong, G Zhang, ... IEEE electron device letters 33 (11), 1529-1531, 2012 | 26 | 2012 |
| Post-growth annealing of germanium-tin alloys using pulsed excimer laser L Wang, W Wang, Q Zhou, J Pan, Z Zhang, ES Tok, YC Yeo Journal of Applied Physics 118 (2), 2015 | 23 | 2015 |
| High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications B Liu, X Gong, R Cheng, P Guo, Q Zhou, MHS Owen, C Guo, L Wang, ... 2013 IEEE International Electron Devices Meeting, 26.7. 1-26.7. 3, 2013 | 18 | 2013 |
| Source/Drain Engineering for In0. 7Ga0. 3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction X Gong, HC Chin, SM Koh, L Wang, I Zhu, B Wang, CK Chia, YC Yeo Japanese Journal of Applied Physics 50 (4S), 04DF01, 2011 | 16 | 2011 |
| High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate G Han, S Su, Y Yang, P Guo, X Gong, L Wang, W Wang, C Guo, G Zhang, ... ECS Transactions 50 (9), 943, 2013 | 14 | 2013 |
| Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study VR D'Costa, L Wang, W Wang, SL Lim, TK Chan, LH Chua, T Henry, ... Applied Physics Letters 105 (12), 2014 | 13 | 2014 |
| Fluorine incorporation in HfAlO gate dielectric for defect passivation and effect on electrical characteristics of In0. 53Ga0. 47As n-MOSFETs HC Chin, X Gong, L Wang, YC Yeo Electrochemical and Solid-State Letters 13 (12), H440, 2010 | 12 | 2010 |
