Ambika Prasad Shah

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Dr. Santosh Kumar VishvakarmaIndian Institute of Technology IndoreVerified email at iiti.ac.in
Dr. Nandakishor YadavFraunhofer Institute fo Photonics MicrosystemsVerified email at ipms.fraunhofer.de
SYED FARAH NAZScientific Associate, Ruhr University Bochum, GermanyVerified email at ruhr-uni-bochum.de
Dr. ANKUR BEOHARSEEE, VIT Bhopal UniversityVerified email at vitbhopal.ac.in
Shreeniwas DaulatabadSenior Research Scientist, IIT BombayVerified email at iitb.ac.in
Aryan KannaujiyaIndian Institute of Technology JammuVerified email at iitjammu.ac.in
Michael WaltlFull Professor at TU Wien, Vienna, AustriaVerified email at iue.tuwien.ac.at
Jai Gopal Pandey, Ph.D.Senior Principal Scientist, CSIR– Central Electronics Engg. Research Insti (CEERI), Pilani, IndiaVerified email at ceeri.res.in
Vishal SharmaSoC Design Engineer-Intel, Post Doc-NTU Singapore, PhD-IIT IndoreVerified email at iiti.ac.in
Debabrata MondalIndian Institute of Technology JammuVerified email at iitjammu.ac.in
Michael HuebnerProfessor for Computer EngineeringVerified email at b-tu.de
Patrick GirardLIRMMVerified email at lirmm.fr
GOPAL RAUTC-DAC Bangalore, IndiaVerified email at iiti.ac.in
Mohammad Mudakir FaziliNational Institute of Technology Srinagar (NIT SRINAGAR)Verified email at nitsri.ac.in
Mohsin Fayaz ShahNational Institute of Technology, SrinagarVerified email at nitsri.ac.in
Suhaib AhmedModel Institute of Engineering and Technology, Jammu, IndiaVerified email at mietjammu.in
Daniele RossiUniversity of Pisa, ItalyVerified email at unipi.it
Pooran SinghEcole Centrale School of Engineering, Mahindra UniversitVerified email at mahindrauniversity.edu.in
Sorin CotofanaQuantum & Computer Engineering, Delft University of TechnologyVerified email at tudelft.nl
Amirhossein MoshrefiSimon Fraser UniversityVerified email at sfu.ca

Ambika Prasad Shah

Assistant Professor, Electrical Engineering Department, Indian Institute of Technology Jammu

Verified email at iitjammu.ac.in - Homepage

Design for reliability Low power circuit designs Ring Amplifiers Hardware security BTI


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An improved read-assist energy efficient single ended PPN based 10T SRAM cell for wireless sensor network P Sanvale, N Gupta, V Neema, AP Shah, SK Vishvakarma Microelectronics Journal 92, 104611, 2019	59	2019
Stable, reliable, and bit-interleaving 12T SRAM for space applications: A device circuit co-design N Yadav, AP Shah, SK Vishvakarma IEEE Transactions on Semiconductor Manufacturing 30 (3), 276-284, 2017	57	2017
On-chip adaptive body bias for reducing the impact of NBTI on 6T SRAM cells AP Shah, N Yadav, A Beohar, SK Vishvakarma IEEE Transactions on Semiconductor Manufacturing 31 (2), 242-249, 2018	48	2018
Soft error hardened asymmetric 10T SRAM cell for aerospace applications AP Shah, SK Vishvakarma, M Hübner Journal of Electronic Testing 36, 255-269, 2020	30	2020
An ultra-low power, reconfigurable, aging resilient RO PUF for IoT applications S Khan, AP Shah, N Gupta, SS Chouhan, JG Pandey, SK Vishvakarma Microelectronics journal 92, 104605, 2019	30	2019
Process variation and NBTI resilient Schmitt trigger for stable and reliable circuits AP Shah, N Yadav, A Beohar, SK Vishvakarma IEEE Transactions on Device and Materials Reliability 18 (4), 546-554, 2018	28	2018
A reliable, multi-bit error tolerant 11T SRAM memory design for wireless sensor nodes V Sharma, N Gupta, AP Shah, SK Vishvakarma, SS Chouhan Analog Integrated Circuits and Signal Processing 107 (2), 339-352, 2021	26	2021
Utilizing manufacturing variations to design a tri-state flip-flop PUF for IoT security applications S Khan, AP Shah, SS Chouhan, S Rani, N Gupta, JG Pandey, ... Analog Integrated Circuits and Signal Processing 103 (3), 477-492, 2020	23	2020
Dual threshold voltage and sleep switch dual threshold voltage DOIND approach for leakage reduction in domino logic circuits AP Shah, V Neema, S Daulatabad, P Singh Microsystem Technologies 25, 1639-1652, 2019	22	2019
An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells AP Shah, N Yadav, A Beohar, SK Vishvakarma Microelectronics Reliability 87, 15-23, 2018	21	2018
A symmetric D flip-flop based PUF with improved uniqueness S Khan, AP Shah, SS Chouhan, N Gupta, JG Pandey, SK Vishvakarma Microelectronics Reliability 106, 113595, 2020	19	2020
Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications A Beohar, N Yadav, AP Shah, SK Vishvakarma Journal of Computational Electronics 17 (4), 1650-1657, 2018	18	2018
Efficient CZTSSe thin film solar cell employing MoTe2/MoS2 as hole transport layer A Kannaujiya, AK Patel, S Kannaujiya, AP Shah Micro and Nanostructures 169, 207356, 2022	17	2022
QCA based cost efficient coplanar 1× 4 RAM design with set/reset ability SF Naz, S Ahmed, SB Ko, AP Shah, S Sharma International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022	17	2022
Effect of process, voltage and temperature (PVT) variations In LECTOR-B (leakage reduction technique) at 70 nm technology node AP Shah, V Neema, S Daulatabad 2015 International Conference on Computer, Communication and Control (IC4), 1-6, 2015	16	2015
8-bit 250-MS/s ADC Based on SAR Architecture with Novel Comparator at 70 nm Technology Node S Daulatabad, V Neema, AP Shah, P Singh Procedia Computer Science 79, 589-596, 2016	14	2016
Radiation hardened 12T SRAM cell with improved writing capability for space applications R Sharma, D Mondal, AP Shah Memories-materials, Devices, Circuits and systems 5, 100071, 2023	13	2023
Next generation QCA technology based true random number generator for cryptographic applications MM Fazili, MF Shah, SF Naz, AP Shah Microelectronics Journal 126, 105502, 2022	13	2022
An energy‐efficient data‐dependent low‐power 10T SRAM cell design for LiFi enabled smart street lighting system application N Gupta, V Sharma, AP Shah, S Khan, M Huebner, SK Vishvakarma International Journal of Numerical Modelling: Electronic Networks, Devices …, 2020	13	2020
BTI and soft-error tolerant voltage bootstrapped Schmitt trigger circuit N Gupta, AP Shah, SK Vishvakarma IEEE Transactions on Device and Materials Reliability 21 (1), 153-155, 2021	11	2021

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