| Multisubband Monte Carlo study of transport, quantization, and electron-gas degeneration in ultrathin SOI n-MOSFETs L Lucci, P Palestri, D Esseni, L Bergagnini, L Selmi IEEE transactions on electron devices 54 (5), 1156-1164, 2007 | 113 | 2007 |
| Cryogenic characterization of 22-nm FDSOI CMOS technology for quantum computing ICs S Bonen, U Alakusu, Y Duan, MJ Gong, MS Dadash, L Lucci, ... IEEE Electron Device Letters 40 (1), 127-130, 2018 | 111 | 2018 |
| Design considerations for spin readout amplifiers in monolithically integrated semiconductor quantum processors MJ Gong, U Alakusu, S Bonen, MS Dadash, L Lucci, H Jia, LE Gutierrez, ... 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 111-114, 2019 | 43 | 2019 |
| Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration L Lucci, P Palestri, D Esseni, L Selmi IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 40 | 2005 |
| Multi-subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs P Palestri, R Clerc, D Esseni, L Lucci, L Selmi 2006 International Electron Devices Meeting, 1-4, 2006 | 30 | 2006 |
| Conventional technological boosters for injection velocity in ultrathin-body MOSFETs M Ferrier, R Clerc, L Lucci, Q Rafhay, G Pananakakis, G Ghibaudo, ... IEEE transactions on Nanotechnology 6 (6), 613-621, 2007 | 26 | 2007 |
| An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations P Palestri, L Lucci, S Dei Tos, D Esseni, L Selmi Semiconductor science and technology 25 (5), 055011, 2010 | 22 | 2010 |
| 22FDX® fMAX Optimization through Parasitics Reduction and GM Boost Z Zhao, S Lehmann, L Lucci, Y Andee, A Divay, L Pirro, T Herrmann, ... ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 15 | 2019 |
| 22nm ultra-thin body and buried oxide FDSOI RF noise performance OM Kane, L Lucci, P Scheiblin, S Lepilliet, F Danneville 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 35-38, 2019 | 13 | 2019 |
| Monte-Carlo simulation of decananometric double-gate SOI devices: Multi-subband vs. 3D-electron gas with quantum corrections I Riolino, M Braccioli, L Lucci, D Esseni, C Fiegna, P Palestri, L Selmi 2006 European Solid-State Device Research Conference, 162-165, 2006 | 12 | 2006 |
| Comparative analysis of basic transport properties in the inversion layer of bulk and SOI MOSFETs: A Monte-Carlo study L Lucci, D Esseni, P Palestri, L Selmi Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004 | 12 | 2004 |
| Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas L Lucci, P Palestri, D Esseni, L Selmi Solid-state electronics 49 (9), 1529-1535, 2005 | 11 | 2005 |
| Assessment of the impact of biaxial strain on the drain current of decanometric n-MOSFET D Ponton, L Lucci, P Palestri, D Esseni, L Selmi 2006 European Solid-State Device Research Conference, 166-169, 2006 | 10 | 2006 |
| Scaling of high-k dielectrics towards sub-1nm EOT M Heyns, S Beckx, H Bender, P Blomme, W Boullart, B Brijs, R Carter, ... 2003 International Symposium on VLSI Technology, Systems and Applications …, 2003 | 10 | 2003 |
| 4-port RF performance assessment and compact modeling of UTBB-FDSOI transistors JC Barbé, L Lucci, A Siligaris, P Vincent, O Faynot 2015 IEEE radio frequency integrated circuits symposium (RFIC), 355-358, 2015 | 9 | 2015 |
| RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology O Kane, L Lucci, P Scheiblin, S Lepilliet, F Danneville 2019 Joint International EUROSOI Workshop and International Conference on …, 2019 | 8 | 2019 |
| Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations L Lucci, D Esseni, J Loo, Y Ponomarev, L Selmi, A Abramo, E Sangiorgi IEEE International Electron Devices Meeting 2003, 19.2. 1-19.2. 4, 2003 | 8 | 2003 |
| A compact model of AlGaN/GaN HEMTs power transistors based on a surface-potential approach P Martin, L Lucci Proceedings of the 20th International Conference Mixed Design of Integrated …, 2013 | 7 | 2013 |
| A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors G Comparone, P Palestri, D Esseni, L Lucci, L Selmi Journal of Computational and Theoretical Nanoscience 5 (6), 1106-1114, 2008 | 6 | 2008 |
| Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections I Riolino, M Braccioli, L Lucci, P Palestri, D Esseni, C Fiegna, L Selmi Solid-state electronics 51 (11-12), 1558-1564, 2007 | 6 | 2007 |
