| Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region M Sadaka, I Radu US Patent 8,461,017, 2013 | 293 | 2013 |
| Recent Developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking I Radu, D Landru, G Gaudin, G Riou, C Tempesta, F Letertre, L Di Cioccio, ... 2010 IEEE International 3D Systems Integration Conference (3DIC), 1-6, 2010 | 273 | 2010 |
| Direct bonding for wafer level 3D integration L Di Cioccio, I Radu, P Gueguen, M Sadaka 2010 IEEE International Conference on Integrated Circuit Design and …, 2010 | 257 | 2010 |
| Method for curing defects in a semiconductor layer I Radu, C Gourdel, C Vetizou US Patent 8,993,461, 2015 | 203 | 2015 |
| Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods M Sadaka, I Radu, D Landru US Patent 8,716,105, 2014 | 176 | 2014 |
| Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods M Sadaka, I Radu, D Landru, L Di Cioccio US Patent 8,501,537, 2013 | 154 | 2013 |
| An overview of patterned metal/dielectric surface bonding: mechanism, alignment and characterization L Di Cioccio, P Gueguen, R Taibi, D Landru, G Gaudin, C Chappaz, ... Journal of The Electrochemical Society 158 (6), P81, 2011 | 95 | 2011 |
| Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology F Fournel, L Continni, C Morales, J Da Fonseca, H Moriceau, F Rieutord, ... Journal of Applied Physics 111 (10), 2012 | 79 | 2012 |
| GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding I Radu, I Szafraniak, R Scholz, M Alexe, U Gösele Journal of Applied Physics 94 (12), 7820-7825, 2003 | 70 | 2003 |
| A model of interface defect formation in silicon wafer bonding S Vincent, I Radu, D Landru, F Letertre, F Rieutord Applied Physics Letters 94 (10), 2009 | 61 | 2009 |
| Oxidation behavior of AlN substrate at low temperature JW Lee, I Radu, M Alexe Journal of materials science: materials in electronics 13, 131-137, 2002 | 47 | 2002 |
| Strain relaxation in nanopatterned strained silicon round pillars C Himcinschi, R Singh, I Radu, AP Milenin, W Erfurth, M Reiche, U Gösele, ... Applied physics letters 90 (2), 2007 | 43 | 2007 |
| Low-temperature layer splitting of (100) GaAs by He+ H coimplantation and direct wafer bonding I Radu, I Szafraniak, R Scholz, M Alexe, U Gösele Applied physics letters 82 (15), 2413-2415, 2003 | 41 | 2003 |
| Physical models of planar spiral inductor integrated on the high-resistivity and trap-rich silicon-on-insulator substrates S Liu, L Zhu, F Allibert, I Radu, X Zhu, Y Lu IEEE Transactions on Electron Devices 64 (7), 2775-2781, 2017 | 39 | 2017 |
| Investigation of hydrogen implantation induced blistering in GaN R Singh, I Radu, U Gösele, SH Christiansen physica status solidi c 3 (6), 1754-1757, 2006 | 33 | 2006 |
| Single-crystalline ferroelectric thin films by ion implantation and direct wafer bonding I Szafraniak, I Radu, R Scholz, M Alexe, U Gösele Integrated Ferroelectrics 55 (1), 983-990, 2003 | 33 | 2003 |
| Surface acoustic wave device and associated production method P Guenard, I Radu US Patent 11,652,464, 2023 | 32 | 2023 |
| Methods of forming bonded semiconductor structures M Sadaka, I Radu US Patent 8,866,305, 2014 | 32 | 2014 |
| New generation of SAW devices on advanced engineered substrates combining piezoelectric single crystals and silicon S Ballandras, E Courjon, F Bernard, T Laroche, A Clairet, I Radu, I Huyet, ... 2019 Joint Conference of the IEEE International Frequency Control Symposium …, 2019 | 31 | 2019 |
| Formation of nanovoids in high-dose hydrogen implanted GaN I Radu, R Singh, R Scholz, U Gösele, S Christiansen, G Brüderl, C Eichler, ... Applied physics letters 89 (3), 2006 | 30 | 2006 |
