| Experimental validation of an equivalent LET approach for correlating heavy-ion and laser-induced charge deposition JM Hales, A Khachatrian, S Buchner, NJH Roche, J Warner, ... IEEE Transactions on Nuclear Science 65 (8), 1724-1733, 2018 | 40 | 2018 |
| Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ... IEEE transactions on Nuclear Science 61 (6), 3218-3225, 2014 | 40 | 2014 |
| Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ... IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016 | 33 | 2016 |
| Optimizing optical parameters to facilitate correlation of laser-and heavy-ion-induced single-event transients in SiGe HBTs A Ildefonso, ZE Fleetwood, GN Tzintzarov, JM Hales, D Nergui, ... IEEE Transactions on Nuclear Science 66 (1), 359-367, 2018 | 32 | 2018 |
| Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ... IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018 | 31 | 2018 |
| The impact of technology scaling on the single-event transient response of SiGe HBTs NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ... IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016 | 28 | 2016 |
| Advanced SiGe BiCMOS technology for multi-Mrad electronic systems ZE Fleetwood, EW Kenyon, NE Lourenco, S Jain, EX Zhang, TD England, ... IEEE Transactions on Device and Materials Reliability 14 (3), 844-848, 2014 | 28 | 2014 |
| Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ... IEEE transactions on Nuclear Science 61 (6), 3210-3217, 2014 | 26 | 2014 |
| Evaluation of enhanced low dose rate sensitivity in fourth-generation SiGe HBTs ZE Fleetwood, AS Cardoso, I Song, E Wilcox, NE Lourenco, SD Phillips, ... IEEE transactions on Nuclear Science 61 (6), 2915-2922, 2014 | 26 | 2014 |
| An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ... IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013 | 26 | 2013 |
| Potential limitations on integrated silicon photonic waveguides operating in a heavy ion environment PS Goley, ZE Fleetwood, JD Cressler IEEE Transactions on Nuclear Science 65 (1), 141-148, 2017 | 22 | 2017 |
| An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ... IEEE transactions on Nuclear Science 63 (1), 273-280, 2016 | 22 | 2016 |
| A SiGe-BiCMOS wideband active bidirectional digital step attenuator with bandwidth tuning and equalization MK Cho, I Song, ZE Fleetwood, JD Cressler IEEE Transactions on Microwave Theory and Techniques 66 (8), 3866-3876, 2018 | 21 | 2018 |
| Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability R Arora, ZE Fleetwood, EX Zhang, NE Lourenco, JD Cressler, ... IEEE Transactions on Nuclear Science 61 (3), 1426-1432, 2014 | 21 | 2014 |
| An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits TD England, R Arora, ZE Fleetwood, NE Lourenco, KA Moen, AS Cardoso, ... IEEE Transactions on Nuclear Science 60 (6), 4405-4411, 2013 | 21 | 2013 |
| On the Transient Response of a Complementary (npn pnp) SiGe HBT BiCMOS Technology NE Lourenco, ZE Fleetwood, S Jung, AS Cardoso, PS Chakraborty, ... IEEE Transactions on Nuclear Science 61 (6), 3146-3153, 2014 | 19 | 2014 |
| NSREC 2016 Special Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE S Abe, D Adams, P Adell, P Agopian, MA Aguirre, J Ahlbin, A Akkerman, ... IEEE Transactions on Nuclear Science 64 (1), 11, 2017 | 16 | 2017 |
| Single-event effects in a W-band (75-110 GHz) radar down-conversion mixer implemented in 90 nm, 300 GHz SiGe HBT technology S Zeinolabedinzadeh, I Song, US Raghunathan, NE Lourenco, ... IEEE Transactions on Nuclear Science 62 (6), 2657-2665, 2015 | 15 | 2015 |
| Single-event transients in SiGe HBTs induced by pulsed X-ray microbeam D Nergui, A Ildefonso, GN Tzintzarov, NE Lourenco, AP Omprakash, ... IEEE Transactions on Nuclear Science 67 (1), 91-98, 2019 | 14 | 2019 |
| Single-event effects in high-frequency linear amplifiers: Experiment and analysis S Zeinolabedinzadeh, H Ying, ZE Fleetwood, NJH Roche, A Khachatrian, ... IEEE transactions on Nuclear Science 64 (1), 125-132, 2016 | 13 | 2016 |