| A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory KC Chun, H Zhao, JD Harms, TH Kim, JP Wang, CH Kim IEEE journal of solid-state circuits 48 (2), 598-610, 2012 | 426 | 2012 |
| Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits TH Kim, R Persaud, CH Kim IEEE Journal of Solid-State Circuits 43 (4), 874-880, 2008 | 349 | 2008 |
| A 0.2 V, 480 kb subthreshold SRAM with 1 k cells per bitline for ultra-low-voltage computing TH Kim, J Liu, J Keane, CH Kim IEEE Journal of Solid-State Circuits 43 (2), 518-529, 2008 | 276 | 2008 |
| A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme TH Kim, J Liu, J Keane, CH Kim 2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007 | 211 | 2007 |
| An on-chip NBTI sensor for measuring PMOS threshold voltage degradation J Keane, TH Kim, CH Kim Proceedings of the 2007 international symposium on Low power electronics and …, 2007 | 184 | 2007 |
| A Voltage Scalable 0.26 V, 64 kb 8T SRAM With V Lowering Techniques and Deep Sleep Mode TH Kim, J Liu, CH Kim Solid-State Circuits, IEEE Journal of 44 (6), 1785-1795, 2009 | 182 | 2009 |
| Utilizing reverse short channel effect for optimal subthreshold circuit design TH Kim, H Eom, J Keane, C Kim Proceedings of the 2006 international symposium on Low power electronics and …, 2006 | 176 | 2006 |
| Colonnade: A reconfigurable SRAM-based digital bit-serial compute-in-memory macro for processing neural networks H Kim, T Yoo, TTH Kim, B Kim IEEE Journal of Solid-State Circuits 56 (7), 2221-2233, 2021 | 116 | 2021 |
| A 16K current-based 8T SRAM compute-in-memory macro with decoupled read/write and 1-5bit column ADC C Yu, T Yoo, TTH Kim, KCT Chuan, B Kim 2020 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2020 | 112 | 2020 |
| Design of an ultra-low voltage 9T SRAM with equalized bitline leakage and CAM-assisted energy efficiency improvement B Wang, TQ Nguyen, AT Do, J Zhou, M Je, TTH Kim IEEE Transactions on Circuits and Systems I: Regular Papers 62 (2), 441-448, 2014 | 104 | 2014 |
| A multi-story power delivery technique for 3D integrated circuits P Jain, TH Kim, J Keane, CH Kim Proceedings of the 2008 international symposium on Low Power Electronics …, 2008 | 83 | 2008 |
| Subthreshold logical effort: a systematic framework for optimal subthreshold device sizing J Keane, H Eom, TH Kim, S Sapatnekar, C Kim Proceedings of the 43rd Annual Design Automation Conference, 425-428, 2006 | 83 | 2006 |
| An area and energy efficient ultra-low voltage level shifter with pass transistor and reduced-swing output buffer in 65-nm CMOS TTH Kim IEEE Transactions on Circuits and Systems II: Express Briefs 65 (5), 607-611, 2018 | 80 | 2018 |
| An 88% Efficiency 0.1–300-W Energy Harvesting System With 3-D MPPT Using Switch Width Modulation for IoT Smart Nodes K Rawy, T Yoo, TTH Kim IEEE Journal of Solid-State Circuits 53 (10), 2751-2762, 2018 | 78 | 2018 |
| A logic-compatible eDRAM compute-in-memory with embedded ADCs for processing neural networks C Yu, T Yoo, H Kim, TTH Kim, KCT Chuan, B Kim IEEE Transactions on Circuits and Systems I: Regular Papers 68 (2), 667-679, 2020 | 69 | 2020 |
| An 8T subthreshold SRAM cell utilizing reverse short channel effect for write margin and read performance improvement TH Kim, J Liu, CH Kim 2007 IEEE Custom Integrated Circuits Conference, 241-244, 2007 | 65 | 2007 |
| A 65-nm 8T SRAM compute-in-memory macro with column ADCs for processing neural networks C Yu, T Yoo, KTC Chai, TTH Kim, B Kim IEEE Journal of Solid-State Circuits 57 (11), 3466-3476, 2022 | 58 | 2022 |
| A 1-16b precision reconfigurable digital in-memory computing macro featuring column-MAC architecture and bit-serial computation H Kim, Q Chen, T Yoo, TTH Kim, B Kim ESSCIRC 2019-IEEE 45th European Solid State Circuits Conference (ESSCIRC …, 2019 | 57 | 2019 |
| 0.77 fJ/bit/search content addressable memory using small match line swing and automated background checking scheme for variation tolerance AT Do, C Yin, K Velayudhan, ZC Lee, KS Yeo, TTH Kim IEEE Journal of Solid-State Circuits 49 (7), 1487-1498, 2014 | 55 | 2014 |
| The shuttle nanoelectromechanical nonvolatile memory V Pott, GL Chua, R Vaddi, JML Tsai, TT Kim IEEE transactions on electron devices 59 (4), 1137-1143, 2012 | 52 | 2012 |
Chris H. KimMcknight Presidential Endowed Chair, University of MinnesotaVerified email at umn.edu
