| Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures D Donetsky, SP Svensson, LE Vorobjev, G Belenky Applied Physics Letters 95 (21), 2009 | 191 | 2009 |
| Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials D Donetsky, G Belenky, S Svensson, S Suchalkin Applied Physics Letters 97 (5), 2010 | 183 | 2010 |
| Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization SP Svensson, D Donetsky, D Wang, H Hier, FJ Crowne, G Belenky Journal of Crystal Growth 334 (1), 103-107, 2011 | 170 | 2011 |
| Band gap of InAsSb with native lattice constant SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ... Physical Review B—Condensed Matter and Materials Physics 86 (24), 245205, 2012 | 107 | 2012 |
| Effects of electron heating on the two-dimensional magnetotransport in AlGaAs/GaAs heterostructures H Sakaki, K Hirakawa, J Yoshino, SP Svensson, Y Sekiguchi, T Hotta, ... Surface Science 142 (1-3), 306-313, 1984 | 98 | 1984 |
| Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ... Applied Physics Letters 108 (22), 2016 | 95 | 2016 |
| Pseudomorphic HEMT technology and applications RL Ross, SP Svensson, P Lugli Springer Science & Business Media, 2012 | 94 | 2012 |
| Properties of unrelaxed InAs1− XSbX alloys grown on compositionally graded buffers G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ... Applied physics letters 99 (14), 2011 | 85 | 2011 |
| High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs DM Gill, BC Kane, SP Svensson, DW Tu, PN Uppal, NE Byer IEEE Electron Device Letters 17 (7), 328-330, 1996 | 75 | 1996 |
| Photoemission studies of the band bending on MBE‐grown GaAs (001) SP Svensson, J Kanski, TG Andersson, PO Nilsson Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1984 | 74 | 1984 |
| Grating coupled multicolor quantum well infrared photodetectors MZ Tidrow, KK Choi, AJ DeAnni, WH Chang, SP Svensson Applied physics letters 67 (13), 1800-1802, 1995 | 65 | 1995 |
| Molecular beam epitaxy control and photoluminescence properties of InAsBi SP Svensson, H Hier, WL Sarney, D Donetsky, D Wang, G Belenky Journal of Vacuum Science & Technology B 30 (2), 2012 | 64 | 2012 |
| Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ... Applied Physics Letters 103 (5), 2013 | 51 | 2013 |
| Al–GaAs (001) Schottky barrier formation SP Svensson, G Landgren, TG Andersson Journal of applied physics 54 (8), 4474-4481, 1983 | 48 | 1983 |
| Band edge optical transitions in dilute-nitride GaNSb D Wang, SP Svensson, L Shterengas, G Belenky, CS Kim, I Vurgaftman, ... Journal of Applied Physics 105 (1), 2009 | 47 | 2009 |
| Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization JW Little, SP Svensson, WA Beck, AC Goldberg, SW Kennerly, ... Journal of applied physics 101 (4), 2007 | 43 | 2007 |
| Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications G Belenky, D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, ... Applied Physics Letters 102 (11), 2013 | 42 | 2013 |
| Superconducting proximity effect in InAsSb surface quantum wells with in situ Al contacts W Mayer, WF Schiela, J Yuan, M Hatefipour, WL Sarney, SP Svensson, ... ACS Applied Electronic Materials 2 (8), 2351-2356, 2020 | 41 | 2020 |
| Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs [sub] 1-X [/sub] Sb [sub] X [/sub] alloys G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, ... Infrared Technology and Applications XXXVII 8012, 318-327, 2011 | 41 | 2011 |
| Development of bulk InAsSb alloys and barrier heterostructures for long-wave infrared detectors Y Lin, D Donetsky, D Wang, D Westerfeld, G Kipshidze, L Shterengas, ... Journal of Electronic Materials 44, 3360-3366, 2015 | 40 | 2015 |
