| Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ... Applied physics letters 73 (12), 1691-1693, 1998 | 825 | 1998 |
| On p‐type doping in GaN—acceptor binding energies S Fischer, C Wetzel, EE Haller, BK Meyer Applied physics letters 67 (9), 1298-1300, 1995 | 375 | 1995 |
| Pressure induced deep gap state of oxygen in GaN C Wetzel, T Suski, JW Ager III, ER Weber, EE Haller, S Fischer, BK Meyer, ... Physical review letters 78 (20), 3923, 1997 | 311 | 1997 |
| Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature … M Iwaya, T Takeuchi, S Yamaguchi, C Wetzel, H Amano, I Akasaki Japanese Journal of Applied Physics 37 (3B), L316, 1998 | 269 | 1998 |
| Optical band gap in Ga1−xInxN (0< x< 0.2) on GaN by photoreflection spectroscopy C Wetzel, T Takeuchi, S Yamaguchi, H Katoh, H Amano, I Akasaki Applied physics letters 73 (14), 1994-1996, 1998 | 254 | 1998 |
| Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire Y LI, SHI YOU, M ZHU, L ZHAO, W HOU, T DETCHPROHM, ... Applied Physics Letters 98 (15), 151102, 2011 | 243 | 2011 |
| Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors JH Edgar, S Strite, I Akasaki, H Amano, C Wetzel INSPEC, IEE, London, UK, (ISBN 0 85296 953 8), 1999 | 218* | 1999 |
| Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy S Yamaguchi, M Kariya, S Nitta, T Takeuchi, C Wetzel, H Amano, ... Journal of applied physics 85 (11), 7682-7688, 1999 | 163 | 1999 |
| Anomalous features in the optical properties of Al1− xInxN on GaN grown by metal organic vapor phase epitaxy S Yamaguchi, M Kariya, S Nitta, T Takeuchi, C Wetzel, H Amano, ... Applied Physics Letters 76 (7), 876-878, 2000 | 157 | 2000 |
| Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in … Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek, TP Chow Applied Physics Letters 102 (19), 2013 | 155 | 2013 |
| GaN epitaxial layers grown on 6H‐SiC by the sublimation sandwich technique C Wetzel, D Volm, BK Meyer, K Pressel, S Nilsson, EN Mokhov, ... Applied physics letters 65 (8), 1033-1035, 1994 | 138 | 1994 |
| Piezoelectric franz–keldysh effect in strained gainn/gan heterostructures C Wetzel, T Takeuchi, H Amano, I Akasaki Journal of applied physics 85 (7), 3786-3791, 1999 | 127 | 1999 |
| Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy S Yamaguchi, M Kariya, S Nitta, H Kato, T Takeuchi, C Wetzel, H Amano, ... Journal of crystal growth 195 (1-4), 309-313, 1998 | 123 | 1998 |
| Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure C Wetzel, W Walukiewicz, EE Haller, J Ager III, I Grzegory, S Porowski, ... Physical Review B 53 (3), 1322, 1996 | 122 | 1996 |
| Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer H Amano, M Iwaya, N Hayashi, T Kashima, S Nitta, C Wetzel, I Akasaki physica status solidi (b) 216 (1), 683-689, 1999 | 107 | 1999 |
| Green light emitting diodes on a-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ... Applied Physics Letters 92 (24), 2008 | 100 | 2008 |
| GaInN∕ GaN growth optimization for high-power green light-emitting diodes C Wetzel, T Salagaj, T Detchprohm, P Li, JS Nelson Applied physics letters 85 (6), 866-868, 2004 | 98 | 2004 |
| Dynamics of bound‐exciton luminescences from epitaxial GaN L Eckey, JC Holst, P Maxim, R Heitz, A Hoffmann, I Broser, BK Meyer, ... Applied physics letters 68 (3), 415-417, 1996 | 98 | 1996 |
| Strongly localized excitons in gallium nitride C Wetzel, S Fischer, J Krüger, EE Haller, RJ Molnar, TD Moustakas, ... Applied physics letters 68 (18), 2556-2558, 1996 | 91 | 1996 |
| Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering Y Li, T Wang, M Wu, T Cao, Y Chen, R Sankar, RK Ulaganathan, F Chou, ... 2D Materials 5 (2), 021002, 2018 | 88 | 2018 |
Hiroshi AMANO (天野 浩)Nagoya University (名古屋大学)Verified email at nuee.nagoya-u.ac.jp