N-type carbon-nanotube MOSFET device profile optimization for very large scale integration Y Sun, V Kursun Transactions on Electrical and Electronic Materials 12 (2), 43-50, 2011 | 52 | 2011 |
A novel robust and low-leakage SRAM cell with nine carbon nanotube transistors Y Sun, H Jiao, V Kursun IEEE Transactions on very large scale integration (VLSI) Systems 23 (9 …, 2014 | 30 | 2014 |
Carbon nanotubes blowing new life into NP dynamic CMOS circuits Y Sun, V Kursun IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 420-428, 2013 | 29 | 2013 |
ITT-RNA: Imperfection tolerable training for RRAM-crossbar-based deep neural-network accelerator Z Song, Y Sun, L Chen, T Li, N Jing, X Liang, L Jiang IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2020 | 23 | 2020 |
Go unary: A novel synapse coding and mapping scheme for reliable ReRAM-based neuromorphic computing C Ma, Y Sun, W Qian, Z Meng, R Yang, L Jiang 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2020 | 23 | 2020 |
Unary coding and variation-aware optimal mapping scheme for reliable ReRAM-based neuromorphic computing Y Sun, C Ma, Z Li, Y Zhao, J Jiang, W Qian, R Yang, Z He, L Jiang IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2021 | 22 | 2021 |
Energy-efficient nonvolatile SRAM design based on resistive switching multi-level cells Y Sun, J Gu, W He, Q Wang, N Jing, Z Mao, W Qian, L Jiang IEEE Transactions on Circuits and Systems II: Express Briefs 66 (5), 753-757, 2019 | 17 | 2019 |
The impact of voltage-source-converters' control on the power system: the stability analysis of a power electronics dominant grid Y Sun | 13 | 2018 |
Monolithic 3D carbon nanotube memory for enhanced yield and integration density Y Sun, W He, Z Mao, H Jiao, V Kursun IEEE Transactions on Circuits and Systems I: Regular Papers 67 (7), 2431-2441, 2020 | 12 | 2020 |
Uniform carbon nanotube diameter and nanoarray pitch for VLSI of 16nm p-channel MOSFETs Y Sun, V Kursun 2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, 226-231, 2011 | 12 | 2011 |
Uniform diameter and pitch co-design of 16nm n-type carbon nanotube channel arrays for VLSI Y Sun, V Kursun 2011 3rd Asia Symposium on Quality Electronic Design (ASQED), 211-216, 2011 | 11 | 2011 |
High-yield and robust 9T SRAM cell tolerant to removal of metallic carbon nanotubes Y Sun, W He, Z Mao, H Jiao, V Kursun IEEE Transactions on Device and Materials Reliability 17 (1), 20-31, 2017 | 10 | 2017 |
Mslm-rf: A spatial feature enhanced random forest for on-board hyperspectral image classification S Yuan, Y Sun, W He, Q Gu, S Xu, Z Mao, S Tu IEEE Transactions on Geoscience and Remote Sensing 60, 1-17, 2022 | 8 | 2022 |
Digital offset for rram-based neuromorphic computing: A novel solution to conquer cycle-to-cycle variation Z Meng, W Oian, Y Zhao, Y Sun, R Yang, L Jiang 2021 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2021 | 8 | 2021 |
Variation-aware global placement for improving timing-yield of carbon-nanotube field effect transistor circuit C Wang, Y Sun, S Hu, L Jiang, W Qian ACM Transactions on Design Automation of Electronic Systems (TODAES) 23 (4 …, 2018 | 7 | 2018 |
Metallic-CN-removal-tolerant high-yield six-CN-MOSFET SRAM cell for carbon-based embedded memory Y Sun, W He, Z Mao, H Jiao, V Kursun IEEE Transactions on Electron Devices 65 (3), 1230-1238, 2018 | 7 | 2018 |
Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic Y Sun, W He, Z Mao, V Kursun Microelectronics Journal 62, 12-20, 2017 | 7 | 2017 |
Low-power and compact NP dynamic CMOS adder with 16nm carbon nanotube transistors Y Sun, V Kursun 2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2119-2122, 2013 | 7 | 2013 |
Initial stage degradation of GFRP bars based on functional group ratio change using FTIR in high temperature and alkaline solution Y Sun, Z Jin, X Zhang, S Zhang, S He, B Pang Journal of Building Engineering 68, 106190, 2023 | 6 | 2023 |
BC-MVLiM: A binary-compatible multi-valued logic-in-memory based on memristive crossbars Y Sun, Z Li, W Liu, W He, Q Wang, Z Mao IEEE Transactions on Circuits and Systems I: Regular Papers 70 (5), 2048-2061, 2023 | 6 | 2023 |