| High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes JH Na, M Kitamura, Y Arakawa Applied Physics Letters 93 (6), 2008 | 216 | 2008 |
| Hybrid pn junction light-emitting diodes based on sputtered ZnO and organic semiconductors JH Na, M Kitamura, M Arita, Y Arakawa Applied Physics Letters 95 (25), 2009 | 81 | 2009 |
| Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field JW Robinson, JH Rice, KH Lee, JH Na, RA Taylor, DG Hasko, RA Oliver, ... Applied Physics Letters 86 (21), 2005 | 79 | 2005 |
| Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors JH Na, M Kitamura, Y Arakawa Applied Physics Letters 93 (21), 2008 | 78 | 2008 |
| Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes M Kitamura, Y Kuzumoto, S Aomori, M Kamura, JH Na, Y Arakawa Applied Physics Letters 94 (8), 2009 | 76 | 2009 |
| Quantum dot emission from site-controlled InGaN∕ GaN micropyramid arrays PR Edwards, RW Martin, IM Watson, C Liu, RA Taylor, JH Rice, JH Na, ... Applied Physics Letters 85 (19), 4281-4283, 2004 | 72 | 2004 |
| Simple analysis method for determining internal quantum efficiency and relative recombination ratios in light emitting diodes YS Yoo, TM Roh, JH Na, SJ Son, YH Cho Applied Physics Letters 102 (21), 2013 | 68 | 2013 |
| Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities M Kitamura, S Aomori, JH Na, Y Arakawa Applied Physics Letters 93 (3), 2008 | 52 | 2008 |
| Registration of single quantum dots using cryogenic laser photolithography KH Lee, AM Green, RA Taylor, DN Sharp, J Scrimgeour, OM Roche, ... Applied physics letters 88 (19), 2006 | 46 | 2006 |
| Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field YS Yoo, JH Na, SJ Son, YH Cho Scientific reports 6 (1), 34586, 2016 | 44 | 2016 |
| Dependence of carrier localization in InGaN∕ GaN multiple-quantum wells on well thickness JH Na, RA Taylor, KH Lee, T Wang, A Tahraoui, P Parbrook, AM Fox, ... Applied physics letters 89 (25), 2006 | 40 | 2006 |
| Biexciton and exciton dynamics in single InGaN quantum dots JH Rice, JW Robinson, JH Na, KH Lee, RA Taylor, DP Williams, ... Nanotechnology 16 (9), 1477, 2005 | 39 | 2005 |
| High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics JH Na, M Kitamura, D Lee, Y Arakawa Applied physics letters 90 (16), 2007 | 33 | 2007 |
| Luminescence properties of isolated InGaN/GaN quantum dots RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, ... physica status solidi (a) 202 (3), 372-376, 2005 | 33 | 2005 |
| Low-voltage-operating organic complementary circuits based on pentacene and C60 transistors JH Na, M Kitamura, Y Arakawa Thin Solid Films 517 (6), 2079-2082, 2009 | 32 | 2009 |
| High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate JH Na, M Kitamura, Y Arakawa Applied Physics Letters 91 (19), 2007 | 32 | 2007 |
| Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy YS Park, HS Lee, JH Na, HJ Kim, SM Si, HM Kim, TW Kang, JE Oh Journal of applied physics 94 (1), 800-802, 2003 | 31 | 2003 |
| Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers JH Na, RA Taylor, JH Rice, JW Robinson, KH Lee, YS Park, CM Park, ... Applied Physics Letters 86 (8), 2005 | 29 | 2005 |
| Complementary two-input NAND gates with low-voltage-operating organic transistors on plastic substrates JH Na, M Kitamura, Y Arakawa Applied physics express 1 (2), 021803, 2008 | 24 | 2008 |
| Photoluminescence properties of a single GaN nanorod with GaN∕ AlGaN multilayer quantum disks SN Yi, JH Na, KH Lee, AF Jarjour, RA Taylor, YS Park, TW Kang, S Kim, ... Applied Physics Letters 90 (10), 2007 | 22 | 2007 |