| Transferred via contacts as a platform for ideal two-dimensional transistors Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ... Nature Electronics 2 (5), 187-194, 2019 | 249 | 2019 |
| Dynamical strong coupling and parametric amplification of mechanical modes of graphene drums JP Mathew, RN Patel, A Borah, R Vijay, MM Deshmukh Nature nanotechnology 11 (9), 747-751, 2016 | 201 | 2016 |
| High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide MS Choi, A Nipane, BSY Kim, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ... Nature Electronics 4 (10), 731-739, 2021 | 64 | 2021 |
| Electrostatics of lateral pn junctions in atomically thin materials A Nipane, S Jayanti, A Borah, JT Teherani Journal of Applied Physics 122 (19), 2017 | 55 | 2017 |
| Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices A Nipane, MS Choi, PJ Sebastian, K Yao, A Borah, P Deshmukh, Y Jung, ... ACS Applied Materials & Interfaces 13 (1), 1930-1942, 2020 | 34 | 2020 |
| Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene B Datta, S Dey, A Samanta, H Agarwal, A Borah, K Watanabe, ... Nature communications 8 (1), 14518, 2017 | 31 | 2017 |
| Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant A Borah, A Nipane, MS Choi, J Hone, JT Teherani ACS Applied Electronic Materials 3 (7), 2941-2947, 2021 | 27 | 2021 |
| Low tension graphene drums for electromechanical pressure sensing RN Patel, JP Mathew, A Borah, MM Deshmukh 2D Materials 3 (1), 011003, 2016 | 23 | 2016 |
| Nanoscale electromechanics to measure thermal conductivity, expansion, and interfacial losses JP Mathew, R Patel, A Borah, CB Maliakkal, TS Abhilash, MM Deshmukh Nano letters 15 (11), 7621-7626, 2015 | 22 | 2015 |
| Electrostatic properties simulation of layered 2D material devices A Borah, PJ Sebastian, JT Teherani Online]. Available: https://nanohub. org/resources/2dmatstacks, 2018 | 4 | 2018 |
| Achieving high carrier density and high mobility in graphene using monolayer tungsten oxyselenide MS Choi, A Nipane, B Kim, M Ziffer, I Datta, A Borah, Y Jung, B Kim, ... | 2 | 2021 |
| Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs A Nipane, PJ Sebastian, Y Jung, MS Choi, A Borah, WJ Yoo, J Hone, ... 2019 Device Research Conference (DRC), 231-232, 2019 | 2 | 2019 |
| Erratum:“Electrostatics of lateral pn junctions in atomically thin materials”[J. Appl. Phys. 122, 194501 (2017)] A Nipane, S Jayanti, A Borah, JT Teherani Journal of Applied Physics 124 (13), 2018 | 2 | 2018 |
| An intuitive equivalent circuit model for multilayer van der Waals heterostructures A Borah, PJ Sebastian, A Nipane, JT Teherani IEEE Transactions on Electron Devices 65 (10), 4209-4215, 2018 | 2 | 2018 |
| Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2 Y Jung, MS Chor, A Borah, A Nipane, WJ Yoo, J Hanel, JT Teherani 2018 76th Device Research Conference (DRC), 1-2, 2018 | 1 | 2018 |
| High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide (vol 4, pg 731, 2021) MS Choi, A Nipane, BSY Kim, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ... NATURE ELECTRONICS 4 (12), 931-931, 2021 | | 2021 |
| Systems and methods for universal degenerate p-type doping with monolayer tungsten oxyselenide (tos) J Hone, JT Teherani, AB Nipane, C Minsup, Y Jung, A Borah US Patent App. 17/236,404, 2021 | | 2021 |
| Electrostatic Modeling and Contact Resistance Engineering in 2D Semiconductor Devices A Borah Columbia University, 2021 | | 2021 |
| Strong coupling and parametric amplification in mechanical modes of graphene J Mathew, R Patel, A Borah, R Vijayaraghavan, M Deshmukh APS March Meeting Abstracts 2016, B52. 005, 2016 | | 2016 |
| Spin and valley resolved Landau level crossing in tri-layer ABA stacked graphene B Datta, V Gupta, A Borah, K Watanabe, T Taniguchi, M Deshmukh APS March Meeting Abstracts 2016, A15. 003, 2016 | | 2016 |
James T. TeheraniGaN Device Development and Process Integration Engineer, Texas InstrumentsVerified email at ti.com