| Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors V Talbo, J Saint-Martin, S Retailleau, P Dollfus Scientific reports 7 (1), 14783, 2017 | 25 | 2017 |
| Physical simulation of silicon-nanocrystal-based single-electron transistors V Talbo, S Galdin-Retailleau, A Valentin, P Dollfus IEEE transactions on electron devices 58 (10), 3286-3293, 2011 | 16 | 2011 |
| Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility, and Seebeck coefficient M Lavagna, V Talbo, TQ Duong, A Crépieux Physical Review B 102 (11), 115112, 2020 | 8 | 2020 |
| Charge susceptibility and conductances of a double quantum dot V Talbo, M Lavagna, TQ Duong, A Crépieux AIP Advances 8 (10), 2018 | 5 | 2018 |
| Time-dependent shot noise in multi-level quantum dot-based single-electron devices V Talbo, J Mateos, S Retailleau, P Dollfus, T González Semiconductor Science and Technology 30 (5), 055002, 2015 | 5 | 2015 |
| Thermoelectric conversion in silicon quantum-dots V Talbo, J Saint-Martin, Y Apertet, S Retailleau, P Dollfus Journal of Physics: Conference Series 395 (1), 012112, 2012 | 3 | 2012 |
| Sub-and super-poissonian noise in si quantum dots using fully self-consistent 3d simulation V Talbo, D Querlioz, S Retailleau, P Dollfus Fluctuation and Noise Letters 11 (03), 1242006, 2012 | 3 | 2012 |
| Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs BG Vasallo, V Talbo, T González, Y Lechaux, N Wichmann, S Bollaert, ... 2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017 | 2 | 2017 |
| Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs V Talbo, J Mateos, T González, Y Lechaux, N Wichmann, S Bollaert, ... Journal of Physics: Conference Series 647 (1), 012056, 2015 | 2 | 2015 |
| Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis BG Vasallo, T González, V Talbo, Y Lechaux, N Wichmann, S Bollaert, ... Journal of Applied Physics 123 (3), 2018 | 1 | 2018 |
| Improvement of interfacial and electrical properties of Al2O3/n-Ga0. 47In0. 53As for III-V impact ionization MOSFETs Y Lechaux, A Fadjie, S Bollaert, V Talbo, J Mateos, T González, ... Journal of Physics: Conference Series 647 (1), 012062, 2015 | 1 | 2015 |
| CIME-Réseau CNFM-CIME Nanotech E Bychina Evgeniia Bychina, 2024 | | 2024 |
| Thermoelectric properties of Quantum Dot-based devices V Talbo, P Dollfus, J Saint-Martin 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-4, 2018 | | 2018 |
| Time-dependent physics of double-tunnel junctions V Talbo, J Mateos, S Retailleau, P Dollfus, T González 2015 10th Spanish Conference on Electron Devices (CDE), 1-4, 2015 | | 2015 |
| Frequency-dependent shot noise in single-electron devices V Talbo, J Mateos, S Retailleau, P Dollfus, T González 2014 International Workshop on Computational Electronics (IWCE), 1-3, 2014 | | 2014 |
| Theoretical study of electronic transport in semiconductor quantum dot-based nanodevices V Talbo < bound method Organization. get_name_with_acronym of< Organization: TEL …, 2012 | | 2012 |
| Étude théorique du transport électronique dans les nanodispositifs à boîtes quantiques semiconductrices V Talbo Université Paris Sud-Paris XI, 2012 | | 2012 |
| Shot noise behavior in single-electron quantum dot-based structures V Talbo, S Galdin-Retailleau, D Querlioz, P Dollfus 2012 15th International Workshop on Computational Electronics, 1-4, 2012 | | 2012 |
| Fully self-consistent simulation of silicon nanocrystal-based single-electron transistors V Talbo, A Valentin, S Galdin-Retailleau, P Dollfus 2010 14th International Workshop on Computational Electronics, 1-4, 2010 | | 2010 |
| Impact ionization and band-to-band tunneling in In BG Vasallo, T González, V Talbo | | |
Philippe DollfusCNRS, Université Paris-SaclayVerified email at universite-paris-saclay.fr