| Energy landscape of fullerene materials: a comparison of boron to boron nitride and carbon S De, A Willand, M Amsler, P Pochet, L Genovese, S Goedecker Physical review letters 106 (22), 225502, 2011 | 200 | 2011 |
| Order-disorder transformation in Fe-Al under ball milling P Pochet, E Tominez, L Chaffron, G Martin Phys. Rev. B 52 (400), 4006, 1995 | 176 | 1995 |
| Single artificial atoms in silicon emitting at telecom wavelengths W Redjem, A Durand, T Herzig, A Benali, S Pezzagna, J Meijer, ... Nature Electronics 3 (12), 738-743, 2020 | 148 | 2020 |
| Optimized energy landscape exploration using the ab initio based activation-relaxation technique E Machado-Charry, LK Béland, D Caliste, L Genovese, T Deutsch, ... The Journal of chemical physics 135 (3), 2011 | 108 | 2011 |
| Band gap engineering via edge-functionalization of graphene nanoribbons P Wagner, CP Ewels, JJ Adjizian, L Magaud, P Pochet, S Roche, ... The Journal of Physical Chemistry C 117 (50), 26790-26796, 2013 | 104 | 2013 |
| The activation‐relaxation technique: ART nouveau and kinetic ART N Mousseau, LK Béland, P Brommer, JF Joly, F El-Mellouhi, ... Journal of Atomic and Molecular Physics 2012 (1), 925278, 2012 | 102 | 2012 |
| Point defect engineering strategies to suppress A-center formation in silicon A Chroneos, CA Londos, EN Sgourou, P Pochet Applied Physics Letters 99 (24), 2011 | 87 | 2011 |
| Strain relaxation in CVD graphene: wrinkling with shear lag MS Bronsgeest, N Bendiab, S Mathur, A Kimouche, HT Johnson, ... Nano letters 15 (8), 5098-5104, 2015 | 85 | 2015 |
| Control of magnetic properties of epitaxial MnGeC films induced by carbon doping A Spiesser, I Slipukhina, MT Dau, E Arras, V Le Thanh, L Michez, ... Physical Review B 84 (16), 165203, 2011 | 80 | 2011 |
| Nitrogen implantation of suspended graphene flakes: Annealing effects and selectivity of sp2 nitrogen species M Scardamaglia, B Aleman, M Amati, C Ewels, P Pochet, N Reckinger, ... Carbon 73, 371-381, 2014 | 75 | 2014 |
| Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si EN Sgourou, D Timerkaeva, CA Londos, D Aliprantis, A Chroneos, ... Journal of Applied Physics 113 (11), 113506, 2013 | 74 | 2013 |
| Simulation of the enhanced Curie temperature in Mn5Ge3Cx compounds I Slipukhina, E Arras, P Mavropoulos, P Pochet Applied Physics Letters 94 (19), 2009 | 72 | 2009 |
| Phase diagram, structure, and magnetic properties of the Ge-Mn system: A first-principles study E Arras, D Caliste, T Deutsch, F Lançon, P Pochet Physical Review B 83 (17), 174103, 2011 | 71 | 2011 |
| Vacancy-assisted diffusion in silicon: A three-temperature-regime model D Caliste, P Pochet Physical review letters 97 (13), 135901, 2006 | 62 | 2006 |
| Beyond van der Waals Interaction: The Case of MoSe2 Epitaxially Grown on Few-Layer Graphene MT Dau, M Gay, D Di Felice, C Vergnaud, A Marty, C Beigne, G Renaud, ... ACS nano 12 (3), 2319-2331, 2018 | 61 | 2018 |
| Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si (001) M Martin, D Caliste, R Cipro, R Alcotte, J Moeyaert, S David, F Bassani, ... Applied Physics Letters 109 (25), 2016 | 57 | 2016 |
| Toward Moiré engineering in 2D materials via dislocation theory P Pochet, BC McGuigan, J Coraux, HT Johnson Applied Materials Today 9, 240-250, 2017 | 56 | 2017 |
| Revisiting the domain model for lithium intercalated graphite S Krishnan, G Brenet, E Machado-Charry, D Caliste, L Genovese, ... Applied Physics Letters 103 (25), 2013 | 49 | 2013 |
| Transferability of neural network potentials for varying stoichiometry: Phonons and thermal conductivity of MnxGey compounds DD Mangold C., Chen S., Barbalinardo G., Behler J., Pochet P, Termentzidis K ... Journal of Applied Physics 127 (24), 244901, 2020 | 47 | 2020 |
| Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance MT Dau, C Vergnaud, A Marty, F Rortais, C Beigné, H Boukari, ... Applied Physics Letters 110 (1), 2017 | 46 | 2017 |