| Influence of dimensionality on thermoelectric device performance R Kim, S Datta, MS Lundstrom Journal of Applied Physics 105 (3), 2009 | 283 | 2009 |
| On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients C Jeong, R Kim, M Luisier, S Datta, M Lundstrom Journal of Applied Physics 107 (2), 2010 | 223 | 2010 |
| Relaxation of optically excited carriers in graphene R Kim, V Perebeinos, P Avouris Physical Review B—Condensed Matter and Materials Physics 84 (7), 075449, 2011 | 157 | 2011 |
| Cooling of photoexcited carriers in graphene by internal and substrate phonons T Low, V Perebeinos, R Kim, M Freitag, P Avouris Physical Review B—Condensed Matter and Materials Physics 86 (4), 045413, 2012 | 144 | 2012 |
| Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations UE Avci, DH Morris, S Hasan, R Kotlyar, R Kim, R Rios, DE Nikonov, ... 2013 IEEE International Electron Devices Meeting, 33.4. 1-33.4. 4, 2013 | 92 | 2013 |
| Integrated circuits and systems and methods for producing the same DE Nikonov, RL Sankman, R Kim, J Pan US Patent 8,963,135, 2015 | 88 | 2015 |
| Notes on fermi-dirac integrals R Kim, X Wang, M Lundstrom arXiv preprint arXiv:0811.0116, 2008 | 85 | 2008 |
| Computational study of the Seebeck coefficient of one-dimensional composite nano-structures R Kim, MS Lundstrom Journal of Applied Physics 110 (3), 2011 | 74 | 2011 |
| On the best bandstructure for thermoelectric performance: A Landauer perspective C Jeong, R Kim, MS Lundstrom Journal of Applied Physics 111 (11), 2012 | 71 | 2012 |
| Effects of surface orientation on the performance of idealized III–V thin-body ballistic n-MOSFETs R Kim, T Rakshit, R Kotlyar, S Hasan, CE Weber IEEE electron device letters 32 (6), 746-748, 2011 | 55 | 2011 |
| Characteristic features of 1-D ballistic transport in nanowire MOSFETs R Kim, MS Lundstrom IEEE Transactions on Nanotechnology 7 (6), 787-794, 2008 | 55 | 2008 |
| Source/drain doping effects and performance analysis of ballistic III-V n-MOSFETs R Kim, UE Avci, IA Young IEEE Journal of the Electron Devices Society 3 (1), 37-43, 2014 | 54 | 2014 |
| Computational study of energy filtering effects in one-dimensional composite nano-structures R Kim, MS Lundstrom Journal of Applied Physics 111 (2), 2012 | 54 | 2012 |
| Physics of carrier backscattering in one-and two-dimensional nanotransistors R Kim, MS Lundstrom IEEE transactions on electron devices 56 (1), 132-139, 2008 | 51 | 2008 |
| CMOS performance benchmarking of Si, InAs, GaAs, and Ge nanowire n-and pMOSFETs with Lg= 13 nm based on atomistic quantum transport simulation including strain effects R Kim, UE Avci, IA Young 2015 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2015 | 45 | 2015 |
| On momentum conservation and thermionic emission cooling R Kim, C Jeong, MS Lundstrom Journal of Applied Physics 107 (5), 2010 | 43 | 2010 |
| Comprehensive performance benchmarking of III-V and Si nMOSFETs (gate length= 13 nm) considering supply voltage and OFF-current R Kim, UE Avci, IA Young IEEE Transactions on Electron Devices 62 (3), 713-721, 2015 | 36 | 2015 |
| Band structure lab A Paul, M Luisier, N Neophytou, R Kim, J Geng, M McLennan, ... doi, 2006 | 22 | 2006 |
| Tunneling field effect transistors (tfets) with undoped drain underlap wrap-around regions UE Avci, R Kim, IA Young US Patent App. 14/779,943, 2016 | 17 | 2016 |
| Band structure lab S Mukherjee, A Paul, N Neophytou, R Kim, J Geng, M Povolotskyi, ... DOI: https://doi. org/10.4231/D3SF2MC1C Available at: https://nanohub. org …, 2014 | 16 | 2014 |
