| Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2/HfO 2 gate dielectric stack A Nourbakhsh, A Zubair, S Joglekar, M Dresselhaus, T Palacios Nanoscale 9 (18), 6122-6127, 2017 | 164 | 2017 |
| Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors Y Zhang, M Sun, SJ Joglekar, T Fujishima, T Palacios Applied Physics Letters 103 (3), 2013 | 124 | 2013 |
| Design space and origin of off-state leakage in GaN vertical power diodes Y Zhang, HY Wong, M Sun, S Joglekar, L Yu, NA Braga, RV Mickevicius, ... 2015 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2015 | 110 | 2015 |
| Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation S Joglekar, U Radhakrishna, D Piedra, D Antoniadis, T Palacios 2017 IEEE International Electron Devices Meeting (IEDM), Pages: 25.3.1 - 25.3.4, 2017 | 69 | 2017 |
| Experimental characterization of the thermal time constants of GaN HEMTs via micro-Raman thermometry KR Bagnall, OI Saadat, S Joglekar, T Palacios, EN Wang IEEE Transactions on Electron Devices 64 (5), 2121-2128, 2017 | 59 | 2017 |
| Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment T Fujishima, S Joglekar, D Piedra, HS Lee, Y Zhang, A Uedono, ... Applied Physics Letters 103 (8), 2013 | 53 | 2013 |
| Impact of Al2O3Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors S Joglekar, M Azize, EJ Jones, D Piedra, S Gradečak, T Palacios IEEE Transactions on Electron Devices 63 (1), 318-325, 2015 | 35 | 2015 |
| Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors S Joglekar, M Azize, M Beeler, E Monroy, T Palacios Applied Physics Letters 109 (4), 2016 | 33 | 2016 |
| mmWave and sub-THz technology development in Intel 22nm FinFET (22FFL) process Q Yu, S Rami, J Waldemer, Y Ma, V Neeli, J Garrett, G Liu, J Koo, ... 2020 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2020 | 13 | 2020 |
| High threshold voltage in GaN MOS-HEMTs modulated by fluorine plasma and gate oxide Y Zhang, M Sun, SJ Joglekar, T Palacios 71st Device Research Conference, 141-142, 2013 | 12 | 2013 |
| High-linearity transistors TA Palacios, S Jayanta-Joglekar, U Radhakrishna US Patent 10,439,059, 2019 | 11 | 2019 |
| Finite element analysis of fabrication-and operation-induced mechanical stress in AlGaN/GaN transistors S Joglekar, C Lian, R Baskaran, Y Zhang, T Palacios, A Hanson IEEE Transactions on Semiconductor Manufacturing 29 (4), 349-354, 2016 | 8 | 2016 |
| Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors S Jayanta Joglekar Massachusetts Institute of Technology, 2017 | 4 | 2017 |
| Simulation of fabrication-and operation-induced mechanical stress in AlGaN/GaN transistors S Joglekar, C Lian, R Baskaran, Y Zhang, T Palacios, A Hanson CS Mantech Tech. Dig. Paper, 237-240, 2016 | 1 | 2016 |
| Reactive sputtering of III-N materials for applications in electronicdevices S Joglekar, M Azize, T Palacios MRS Advances 1 (2), 141-146, 2016 | 1 | 2016 |
| Wide channel diode structure including sub-fin NA Thomson, KC Kolluru, KAR Ayan, CH Liang, B Orr, B Guha, B Greene, ... US Patent App. 17/943,819, 2024 | | 2024 |
| Integrated circuit devices with diodes integrated in subfins NA Thomson, KAR Ayan, KC Kolluru, BJ Orr, CH Liang, B Guha, ... US Patent App. 17/850,414, 2023 | | 2023 |
| Field-effect transistors with dual thickness gate dielectrics KAR Ayan, KC Kolluru, NA Thomson, M Armstrong, SJ Joglekar, R Ma, ... US Patent 11,145,732, 2021 | | 2021 |
| Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam A Uedono, T Fujishima, Y Cao, S Joglekar, D Piedra, HS Lee, Y Zhang, ... 2014 International Workshop on Junction Technology (IWJT), 1-5, 2014 | | 2014 |
| Subthreshold Swing Improvement in MoS2 Transistors by the Negative-Capacitance Effect A Nourbakhsh, A Zubair, S Joglekar, M Dresselhaus, T Palacios Electronic Devices, 45, 0 | | |
Tomás PalaciosMITVerified email at mit.edu