| Application of the difference subthreshold swing analysis to study generation of interface traps in MOS structures due to Fowler-Nordheim aging C Tan, M Xu, Y Wang IEEE electron device letters 15 (7), 257-259, 1994 | 47 | 1994 |
| A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure M Xu, C Tan, Y He, Y Wang Solid-state electronics 37 (1), 31-36, 1994 | 33 | 1994 |
| Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides M Xu, C Tan, MF Li Applied Physics Letters 82 (15), 2482-2484, 2003 | 26 | 2003 |
| Oxide current relaxation spectroscopy in tunneling metal‐oxide‐semiconductor structures under high field stresses M Xu, C Tan, Y Wang Journal of applied physics 67 (11), 6924-6929, 1990 | 22 | 1990 |
| Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs L Mao, C Tan, M Xu Solid-State Electronics 45 (3), 531-534, 2001 | 20 | 2001 |
| Thickness measurements for ultrathin-film insulator metal–oxide–semiconductor structures using Fowler–Nordheim tunneling current oscillations L Mao, C Tan, M Xu Journal of Applied Physics 88 (11), 6560-6563, 2000 | 20 | 2000 |
| A new technique for determining the capture cross section of the oxide traps in MOS structures M Xu, C Tan, Y Wang IEEE electron device letters 12 (3), 122-124, 1991 | 18 | 1991 |
| Effect of channel length on NBTI in sub-100nm CMOS technology L Jin, M Xu 2008 2nd IEEE International Nanoelectronics Conference, 597-600, 2008 | 16 | 2008 |
| Study of Fowler–Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method L Mao, C Tan, M Xu Solid-State Electronics 44 (8), 1501-1506, 2000 | 16 | 2000 |
| The double level calculation of oxygen related donor states in Si and SiO2 MZ Xu, CH Tan, LF Mao Solid state communications 117 (6), 365-367, 2001 | 15 | 2001 |
| Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs C Tan, M Xu, Z Wang Solid-State Electronics 44 (6), 1059-1067, 2000 | 14 | 2000 |
| Analysis of the rate of change of inversion charge in thin insulator p-type metal-oxide-semiconductor structures M Xu, C Tan, Y He, Y Wang Solid-state electronics 38 (5), 1045-1049, 1995 | 13 | 1995 |
| Study of deep traps using the frequency-dependence of the temperature derivative of PN junction capacitance C Tan, M Xu Solid-state electronics 32 (1), 25-32, 1989 | 12 | 1989 |
| The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures L Mao, C Tan, M Xu Microelectronics Reliability 41 (6), 927-931, 2001 | 11 | 2001 |
| Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures J Wei, L Mao, M Xu, C Tan Solid-State Electronics 44 (11), 2021-2025, 2000 | 11 | 2000 |
| Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs Tan, Xu, Wang, Xie, He Electronics Letters 34 (21), 2067-2069, 1998 | 11 | 1998 |
| Oxide trap relaxation spectroscopy: A new difference method to determine trap in oxidized silicon C Tan, M Xu, X Liu, Y He, Y Wang Journal of applied physics 77 (6), 2576-2581, 1995 | 11 | 1995 |
| Defect band structure investigation of postbreakdown SiO2 M Xu, C Tan Applied Physics Letters 92 (8), 2008 | 10 | 2008 |
| Proportional difference estimate method of determining the characteristic parameters of monomodal and multimodal Weibull distributions of time-dependent dielectric breakdown F Mu, C Tan, M Xu Solid-State Electronics 44 (8), 1419-1424, 2000 | 10 | 2000 |
| Effect of SiO2/Si interface roughness on gate current LF Mao, Y Yang, JL Wei, H Zhang, MZ Xu, CH Tan Microelectronics Reliability 41 (11), 1903-1907, 2001 | 9 | 2001 |