Giorgos Fagas

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James C. GreerChair Professor in Engineering Physics, University of Nottingham, Ningbo, China campusVerified email at nottingham.edu.cn
Gianaurelio (Giovanni) CunibertiTU Dresden; https://ORCID.org/0000-0002-6574-7848Verified email at tu-dresden.de
Michael NolanTyndall National Institute, University College Cork, IrelandVerified email at tyndall.ie
Rafael GutierrezTU DresdenVerified email at nano.tu-dresden.de
Luca GammaitoniNiPS laboratory, Dipartimento di Fisica, Università di PerugiaVerified email at nipslab.org
Colin J. LambertResearch Professor, Lancaster UniversityVerified email at lancaster.ac.uk
Hadi H. ArefiQuantum Nanoscience (PGI-3), Forschungszentrum Jülich GmbHVerified email at fz-juelich.de
Frank GrossmannInstitut für Theoretische Physik, Technische Universität Dresden, Dresden, GermanyVerified email at physik.tu-dresden.de
Douglas J PaulRoyal Academy of Engineering Chair in Emerging Technologies, University of GlasgowVerified email at glasgow.ac.uk
Isabelle FerainGlobalfoundriesVerified email at globalfoundries.com
Aryan AfzalianUniversité catholique de LouvainVerified email at uclouvain.be
Ran (Ruby) YanGLOBALFOUNDRIESVerified email at globalfoundries.com
ND AkhavanThe University of Western AustraliaVerified email at uwa.edu.au
A.M. IonescuProfessor of NanoelectronicsVerified email at epfl.ch
Thomas FrauenheimProfessor für Computational Materials ScienceVerified email at bccms.uni-bremen.de
Sean O'CallaghanData Engineer, NovartisVerified email at novartis.com
Elizabeth BuitragoHitachi EnergyVerified email at hitachienergy.com
A.N.NazarovInstitute of Semiconductor Physics NASUVerified email at lab15.kiev.ua
Sylvain BARRAUDCEA-LETI, Minatec CampusVerified email at cea.fr
Dr. Eoin R. HydeInnersight Labs Ltd & RAEng Enterprise FellowVerified email at innersightlabs.com

Giorgos Fagas

Tyndall National Institute

Verified email at tyndall.ie

electronic transport nanowires molecular electronics disordered systems device simulations


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Introducing molecular electronics G.(Gianaurelio) Cuniberti, G.(Giorgos) Fagas, K Richter Springer, 2005	614*	2005
The potential and global outlook of integrated photonics for quantum technologies E Pelucchi, G Fagas, I Aharonovich, D Englund, E Figueroa, Q Gong, ... Nature Reviews Physics 4 (3), 194-208, 2022	362	2022
Silicon nanowire band gap modification M Nolan, S O'Callaghan, G Fagas, JC Greer, T Frauenheim Nano letters 7 (1), 34-38, 2007	290	2007
Theory of an all-carbon molecular switch R Gutiérrez, G Fagas, G Cuniberti, F Grossmann, R Schmidt, K Richter Physical Review B 65 (11), 113410, 2002	129	2002
Simulation of junctionless Si nanowire transistors with 3 nm gate length L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer Applied Physics Letters 97 (6), 2010	124	2010
Deformation potentials and electron− phonon coupling in silicon nanowires F Murphy-Armando, G Fagas, JC Greer Nano letters 10 (3), 869-873, 2010	79	2010
Ab-initio non-equilibrium Green’s function formalism for calculating electron transport in molecular devices K Stokbro, J Taylor, M Brandbyge, H Guo Introducing Molecular Electronics, 117-151, 2005	76	2005
Lattice dynamics of a disordered solid-solid interface G Fagas, AG Kozorezov, CJ Lambert, JK Wigmore, A Peacock, A Poelaert, ... Physical review b 60 (9), 6459, 1999	71	1999
Fingerprints of mesoscopic leads in the conductance of a molecular wire G Cuniberti, G Fagas, K Richter Chemical physics 281 (2-3), 465-476, 2002	69	2002
Phonon-mediated thermal conductance of mesoscopic wires with rough edges A Kambili, G Fagas, VI Fal’ko, CJ Lambert Physical review b 60 (23), 15593, 1999	64	1999
A proposed confinement modulated gap nanowire transistor based on a metal (tin) L Ansari, G Fagas, JP Colinge, JC Greer Nano letters 12 (5), 2222-2227, 2012	63	2012
Chemical trends in the work function of modified Si (111) surfaces: A DFT study HH Arefi, G Fagas The Journal of Physical Chemistry C 118 (26), 14346-14354, 2014	59	2014
Geometrical enhancement of the proximity effect in quantum wires with extended superconducting tunnel contacts G Fagas, G Tkachov, A Pfund, K Richter Physical Review B—Condensed Matter and Materials Physics 71 (22), 224510, 2005	59	2005
Tunnelling in alkanes anchored to gold electrodes via amine end groups G Fagas, JC Greer Nanotechnology 18 (42), 424010, 2007	50	2007
Ballistic conductance in oxidized Si nanowires G Fagas, JC Greer Nano letters 9 (5), 1856-1860, 2009	49	2009
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013	48	2013
Tunnel currents across silane diamines/dithiols and alkane diamines/dithiols: A comparative computational study S McDermott, CB George, G Fagas, JC Greer, MA Ratner The Journal of Physical Chemistry C 113 (2), 744-750, 2009	47	2009
Electron transport in nanotube–molecular-wire hybrids G Fagas, G Cuniberti, K Richter Physical Review B 63 (4), 045416, 2001	47	2001
Independent particle descriptions of tunneling using the many-body quantum transport approach G Fagas, P Delaney, JC Greer Physical Review B—Condensed Matter and Materials Physics 73 (24), 241314, 2006	46	2006
Energy challenges for ICT G Fagas, JP Gallagher, L Gammaitoni, DJ Paul ICT-Energy Concepts for Energy Efficiency and Sustainability, 1-36, 2017	43	2017

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