| Ultrathin (< 4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits ML Green, EP Gusev, R Degraeve, EL Garfunkel Journal of Applied Physics 90 (5), 2057-2121, 2001 | 1024 | 2001 |
| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 914 | 2011 |
| New insights in the relation between electron trap generation and the statistical properties of oxide breakdown R Degraeve, G Groeseneken, R Bellens, JL Ogier, M Depas, PJ Roussel, ... IEEE Transactions on Electron Devices 45 (4), 904-911, 1998 | 765 | 1998 |
| A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides R Degraeve, G Groeseneken, R Bellens, M Depas, HE Maes Proceedings of International Electron Devices Meeting, 863-866, 1995 | 467 | 1995 |
| Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ... IEEE Electron Device Letters 24 (2), 87-89, 2003 | 436 | 2003 |
| Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010 | 381 | 2010 |
| Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ... Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006 | 336 | 2006 |
| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 309 | 2009 |
| Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ... IEEE Transactions on electron devices 60 (3), 1114-1121, 2013 | 292 | 2013 |
| Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ... Applied Physics Letters 97 (24), 2010 | 278 | 2010 |
| Intrinsic switching variability in HfO2RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 262 | 2013 |
| Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ... IEEE Transactions on Electron Devices 49 (3), 500-506, 2002 | 239 | 2002 |
| Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005 | 229 | 2005 |
| Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ... IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012 | 221 | 2012 |
| Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction R Degraeve, B Kaczer, G Groeseneken Microelectronics Reliability 39 (10), 1445-1460, 1999 | 220 | 1999 |
| Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ... Nano letters 15 (12), 7970-7975, 2015 | 201 | 2015 |
| Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/gate dielectrics A Kerber, E Cartier, L Pantisano, M Rosmeulen, R Degraeve, T Kauerauf, ... 2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003 | 189 | 2003 |
| A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown R Degraeve, JL Ogier, R Bellens, PJ Roussel, G Groeseneken, HE Maes IEEE Transactions on Electron Devices 45 (2), 472-481, 1998 | 161 | 1998 |
| Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications R Degraeve, B Kaczer, A De Keersgieter, G Groeseneken 2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001 | 138 | 2001 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 137 | 2013 |
