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Joris Gerhard Keizer
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A two-qubit gate between phosphorus donor electrons in silicon
Y He, SK Gorman, D Keith, L Kranz, JG Keizer, MY Simmons
Nature 571 (7765), 371-375, 2019
3532019
Engineering topological states in atom-based semiconductor quantum dots
M Kiczynski, S Gorman, H Geng, M Donnely, Y Chung, Y He, J Keizer, ...
Nature 606, 694-699, 2022
1292022
Two-electron spin correlations in precision placed donors in silicon
MA Broome, SK Gorman, MG House, SJ Hile, JG Keizer, D Keith, CD Hill, ...
Nature communications 9 (1), 980, 2018
942018
Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
JG Keizer, J Bocquel, PM Koenraad, T Mano, T Noda, K Sakoda
Applied Physics Letters 96 (6), 2010
792010
Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor
M Koch, JG Keizer, P Pakkiam, D Keith, MG House, E Peretz, ...
Nature nanotechnology 14 (2), 137-140, 2019
742019
Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea
N Kleemans, J Van Bree, AO Govorov, JG Keizer, GJ Hamhuis, R Nötzel, ...
Nature Physics 6 (7), 534-538, 2010
742010
Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon
L Kranz, SK Gorman, B Thorgrimsson, Y He, D Keith, JG Keizer, ...
Advanced Materials 32 (40), 2003361, 2020
672020
Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy
AD Giddings, JG Keizer, M Hara, GJ Hamhuis, H Yuasa, H Fukuzawa, ...
Physical Review B—Condensed Matter and Materials Physics 83 (20), 205308, 2011
612011
High-fidelity single-shot singlet-triplet readout of precision-placed donors in silicon
MA Broome, TF Watson, D Keith, SK Gorman, MG House, JG Keizer, ...
Physical review letters 119 (4), 046802, 2017
592017
A comparison of the physical properties of four new generation flexible ureteroscopes:(de) flection, flow properties, torsion stiffness, and optical characteristics
MLJE Paffen, JG Keizer, G Winter, AJ Arends, AJM Hendrikx
Journal of endourology 22 (10), 2227-2234, 2008
582008
Observation and explanation of strong electrically tunable exciton factors in composition engineered In(Ga)As quantum dots
V Jovanov, T Eissfeller, S Kapfinger, EC Clark, F Klotz, M Bichler, ...
Physical Review B—Condensed Matter and Materials Physics 83 (16), 161303, 2011
492011
Suppressing segregation in highly phosphorus doped silicon monolayers
JG Keizer, S Koelling, PM Koenraad, MY Simmons
ACS nano 9 (12), 12537-12541, 2015
452015
Addressable electron spin resonance using donors and donor molecules in silicon
SJ Hile, L Fricke, MG House, E Peretz, CY Chen, Y Wang, M Broome, ...
Science advances 4 (7), eaaq1459, 2018
442018
Coherent control of a donor-molecule electron spin qubit in silicon
L Fricke, SJ Hile, L Kranz, Y Chung, Y He, P Pakkiam, MG House, ...
Nature communications 12 (1), 3323, 2021
432021
Precise shape engineering of epitaxial quantum dots by growth kinetics
S Bietti, J Bocquel, S Adorno, T Mano, JG Keizer, PM Koenraad, ...
Physical Review B 92 (7), 075425, 2015
422015
Benchmarking high fidelity single-shot readout of semiconductor qubits
D Keith, SK Gorman, L Kranz, Y He, JG Keizer, MA Broome, MY Simmons
New Journal of Physics 21 (6), 063011, 2019
412019
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping
SR McKibbin, CM Polley, G Scappucci, JG Keizer, MY Simmons
Applied Physics Letters 104 (12), 2014
392014
InAs quantum dot morphology after capping with In, N, Sb alloyed thin films
JG Keizer, JM Ulloa, AD Utrilla, PM Koenraad
Applied Physics Letters 104 (5), 2014
352014
Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms
V Jovanov, T Eissfeller, S Kapfinger, EC Clark, F Klotz, M Bichler, ...
Physical Review B—Condensed Matter and Materials Physics 85 (16), 165433, 2012
312012
Single-charge detection by an atomic precision tunnel junction
MG House, E Peretz, JG Keizer, SJ Hile, MY Simmons
Applied Physics Letters 104 (11), 2014
272014
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