Raffaella Calarco

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Jos E. BoschkerFerdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikVerified email at alumnus.utwente.nl
Alessandro GiussaniSilanna SemiconductorVerified email at silanna.com
Stefano CecchiUniversity of Milano BicoccaVerified email at unimib.it
Valeria BragagliaIBM Research-Zurich (CH)Verified email at zurich.ibm.com
Fabrizio ArcipreteDepartment of Physics, University of Rome Tor VergataVerified email at roma2.infn.it
Eugenio ZalloWalter Schottky Institut and TUM School of Natural Sciences, Technische Universität MünchenVerified email at wsi.tum.de
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
B.J. KooiUniversity of GroningenVerified email at rug.nl
Paul FonsProfessor at Keio UniversityVerified email at keio.jp
Jamo MomandPhotonisVerified email at nl.photonis.com
Ratan DebnathNational Institute of Standards and Technology (NIST), Gaithersburg, USAVerified email at nist.gov
Antonio Massimiliano MioResearcher, Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiVerified email at imm.cnr.it
Christian RinaldiPolitecnico di MilanoVerified email at polimi.it
Riccardo BertaccoDipartimento di Fisica Politecnico di MilanoVerified email at polimi.it
Silvia PicozziCNR-SPIN, Chieti, ItalyVerified email at spin.cnr.it
stefania priviteracataniaVerified email at cnr.it
Marcel A VerheijenEindhoven University of TechnologyVerified email at tue.nl
Markus MorgensternRWTH Aachen UniversityVerified email at physik.rwth-aachen.de
Marcus LiebmannRWTH Aachen UniversityVerified email at physik.rwth-aachen.de
Matthias WuttigProfessor für Physik, RWTH AachenVerified email at physik.rwth-aachen.de

Raffaella Calarco

CNR-IMM

Verified email at cnr.it

growth and epitaxy semiconductors chalcogenides


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Size-dependent photoconductivity in MBE-grown GaN− nanowires R Calarco, M Marso, T Richter, AI Aykanat, R Meijers, A vd Hart, T Stoica, ... Nano letters 5 (5), 981-984, 2005	655	2005
Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy R Calarco, RJ Meijers, RK Debnath, T Stoica, E Sutter, H Lüth Nano letters 7 (8), 2248-2251, 2007	330	2007
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111) RK Debnath, R Meijers, T Richter, T Stoica, R Calarco, H Lüth Applied physics letters 90 (12), 2007	302	2007
Giant Rashba-type spin splitting in ferroelectric GeTe (111) M Liebmann, C Rinaldi, D Di Sante, J Kellner, C Pauly, RN Wang, ... Advanced Materials 28 (3), 560-565, 2016	208	2016
Photoluminescence and intrinsic properties of MBE-grown InN nanowires T Stoica, RJ Meijers, R Calarco, T Richter, E Sutter, H Lüth Nano letters 6 (7), 1541-1547, 2006	188	2006
Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires T Stoica, E Sutter, RJ Meijers, RK Debnath, R Calarco, H Lüth, ... Small 4 (6), 751-754, 2008	187	2008
Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices J Momand, R Wang, JE Boschker, MA Verheijen, R Calarco, BJ Kooi Nanoscale 7 (45), 19136-19143, 2015	178	2015
Ferroelectric control of the spin texture in GeTe C Rinaldi, S Varotto, M Asa, J Sławińska, J Fujii, G Vinai, S Cecchi, ... Nano letters 18 (5), 2751-2758, 2018	164	2018
Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014	157	2014
Surface-induced effects in GaN nanowires R Calarco, T Stoica, O Brandt, L Geelhaar Journal of materials research 26 (17), 2157-2168, 2011	139	2011
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity S Fernández-Garrido, X Kong, T Gotschke, R Calarco, L Geelhaar, ... Nano letters 12 (12), 6119-6125, 2012	138	2012
MBE growth optimization of InN nanowires T Stoica, R Meijers, R Calarco, T Richter, H Lüth Journal of crystal growth 290 (1), 241-247, 2006	135	2006
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer T Schumann, T Gotschke, F Limbach, T Stoica, R Calarco Nanotechnology 22 (9), 095603, 2011	133	2011
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 23843, 2016	127	2016
The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements N Thillosen, K Sebald, H Hardtdegen, R Meijers, R Calarco, S Montanari, ... Nano Letters 6 (4), 704-708, 2006	126	2006
GaN-nanowhiskers: MBE-growth conditions and optical properties R Meijers, T Richter, R Calarco, T Stoica, HP Bochem, M Marso, H Lüth Journal of crystal growth 289 (1), 381-386, 2006	126	2006
Franz− Keldysh effect in GaN nanowires A Cavallini, L Polenta, M Rossi, T Stoica, R Calarco, RJ Meijers, T Richter, ... Nano letters 7 (7), 2166-2170, 2007	113	2007
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires K Jeganathan, RK Debnath, R Meijers, T Stoica, R Calarco, ... Journal of applied physics 105 (12), 2009	107	2009
Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate JE Boschker, J Momand, V Bragaglia, R Wang, K Perumal, A Giussani, ... Nano letters 14 (6), 3534-3538, 2014	95	2014
Flux quantization effects in InN nanowires T Richter, C Blömers, H Lüth, R Calarco, M Indlekofer, M Marso, ... Nano letters 8 (9), 2834-2838, 2008	94	2008

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