| Neuro-inspired computing chips W Zhang, B Gao, J Tang, P Yao, S Yu, MF Chang, HJ Yoo, H Qian, H Wu Nature electronics 3 (7), 371-382, 2020 | 626 | 2020 |
| Memristive technologies for data storage, computation, encryption, and radio-frequency communication M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ... Science 376 (6597), eabj9979, 2022 | 396 | 2022 |
| A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors WH Chen, KX Li, WY Lin, KH Hsu, PY Li, CH Yang, CX Xue, EY Yang, ... 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 494-496, 2018 | 351 | 2018 |
| 24.1 A 1Mb multibit ReRAM computing-in-memory macro with 14.6 ns parallel MAC computing time for CNN based AI edge processors CX Xue, WH Chen, JS Liu, JF Li, WY Lin, WE Lin, JH Wang, WC Wei, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 388-390, 2019 | 282 | 2019 |
| A 4Mb embedded SLC resistive-RAM macro with 7.2 ns read-write random-access time and 160ns MLC-access capability SS Sheu, MF Chang, KF Lin, CW Wu, YS Chen, PF Chiu, CC Kuo, ... 2011 IEEE International Solid-State Circuits Conference, 200-202, 2011 | 273 | 2011 |
| A 65nm 4Kb algorithm-dependent computing-in-memory SRAM unit-macro with 2.3 ns and 55.8 TOPS/W fully parallel product-sum operation for binary DNN edge processors WS Khwa, JJ Chen, JF Li, X Si, EY Yang, X Sun, R Liu, PY Chen, Q Li, ... 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 496-498, 2018 | 268 | 2018 |
| 16.4 An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications YD Chih, PH Lee, H Fujiwara, YC Shih, CF Lee, R Naous, YL Chen, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 252-254, 2021 | 251 | 2021 |
| 33.2 A fully integrated analog ReRAM based 78.4 TOPS/W compute-in-memory chip with fully parallel MAC computing Q Liu, B Gao, P Yao, D Wu, J Chen, Y Pang, W Zhang, Y Liao, CX Xue, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 500-502, 2020 | 247 | 2020 |
| 24.5 A twin-8T SRAM computation-in-memory macro for multiple-bit CNN-based machine learning X Si, JJ Chen, YN Tu, WH Huang, JH Wang, YC Chiu, WC Wei, SY Wu, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 396-398, 2019 | 246 | 2019 |
| 15.4 A 22nm 2Mb ReRAM compute-in-memory macro with 121-28TOPS/W for multibit MAC computing for tiny AI edge devices CX Xue, TY Huang, JS Liu, TW Chang, HY Kao, JH Wang, TW Liu, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 244-246, 2020 | 236 | 2020 |
| Differential sensing and TSV timing control scheme for 3D-IC WC Wu, YH Chen, MF Chang US Patent 7,969,193, 2011 | 219 | 2011 |
| CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors WH Chen, C Dou, KX Li, WY Lin, PY Li, JH Huang, JH Wang, WC Wei, ... Nature Electronics 2 (9), 420-428, 2019 | 214 | 2019 |
| 15.5 A 28nm 64Kb 6T SRAM computing-in-memory macro with 8b MAC operation for AI edge chips X Si, YN Tu, WH Huang, JW Su, PJ Lu, JH Wang, TW Liu, SY Wu, R Liu, ... 2020 IEEE international solid-state circuits conference-(ISSCC), 246-248, 2020 | 213 | 2020 |
| A twin-8T SRAM computation-in-memory unit-macro for multibit CNN-based AI edge processors X Si, JJ Chen, YN Tu, WH Huang, JH Wang, YC Chiu, WC Wei, SY Wu, ... IEEE Journal of Solid-State Circuits 55 (1), 189-202, 2019 | 193 | 2019 |
| Low store energy, low VDDmin, 8T2R nonvolatile latch and SRAM with vertical-stacked resistive memory (memristor) devices for low power mobile applications PF Chiu, MF Chang, CW Wu, CH Chuang, SS Sheu, YS Chen, MJ Tsai IEEE Journal of Solid-State Circuits 47 (6), 1483-1496, 2012 | 189 | 2012 |
| Challenges and trends of SRAM-based computing-in-memory for AI edge devices CJ Jhang, CX Xue, JM Hung, FC Chang, MF Chang IEEE Transactions on Circuits and Systems I: Regular Papers 68 (5), 1773-1786, 2021 | 186 | 2021 |
| 15.2 A 28nm 64Kb inference-training two-way transpose multibit 6T SRAM compute-in-memory macro for AI edge chips JW Su, X Si, YC Chou, TW Chang, WH Huang, YN Tu, R Liu, PJ Lu, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 240-242, 2020 | 175 | 2020 |
| 16.1 A 22nm 4Mb 8b-precision ReRAM computing-in-memory macro with 11.91 to 195.7 TOPS/W for tiny AI edge devices CX Xue, JM Hung, HY Kao, YH Huang, SP Huang, FC Chang, P Chen, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 245-247, 2021 | 169 | 2021 |
| In-memory learning with analog resistive switching memory: A review and perspective Y Xi, B Gao, J Tang, A Chen, MF Chang, XS Hu, J Van Der Spiegel, ... Proceedings of the IEEE 109 (1), 14-42, 2020 | 168 | 2020 |
| 16.3 A 28nm 384kb 6T-SRAM computation-in-memory macro with 8b precision for AI edge chips JW Su, YC Chou, R Liu, TW Liu, PJ Lu, PC Wu, YL Chung, LY Hung, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 250-252, 2021 | 164 | 2021 |
Kea-Tiong TangNational Tsing Hua UniversityVerified email at ee.nthu.edu.tw
