| Physically based models of electromigration: From Black’s equation to modern TCAD models RL De Orio, H Ceric, S Selberherr Microelectronics Reliability 50 (6), 775-789, 2010 | 185 | 2010 |
| A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects H Ceric, RL de Orio, J Cervenka, S Selberherr IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008 | 64 | 2008 |
| Electromigration failure in a copper dual-damascene structure with a through silicon via RL de Orio, H Ceric, S Selberherr Microelectronics Reliability 52 (9-10), 1981-1986, 2012 | 37 | 2012 |
| A compact model for early electromigration failures of copper dual-damascene interconnects RL De Orio, H Ceric, S Selberherr Microelectronics Reliability 51 (9-11), 1573-1577, 2011 | 30 | 2011 |
| Electromigration modeling and simulation RL De Orio na, 2010 | 29 | 2010 |
| Spin and charge drift-diffusion in ultra-scaled MRAM cells S Fiorentini, M Bendra, J Ender, RL de Orio, W Goes, S Selberherr, ... Scientific Reports 12 (1), 20958, 2022 | 25 | 2022 |
| Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions S Fiorentini, J Ender, S Selberherr, RL de Orio, W Goes, V Sverdlov Solid-State Electronics 186, 108103, 2021 | 24 | 2021 |
| Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ... Solid-State Electronics 168, 107730, 2020 | 18 | 2020 |
| Optimization of a spin-orbit torque switching scheme based on micromagnetic simulations and reinforcement learning RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov Micromachines 12 (4), 443, 2021 | 15 | 2021 |
| Modeling methods for analysis of electromigration degradation in nano-interconnects H Ceric, S Selberherr, H Zahedmanesh, RL de Orio, K Croes ECS Journal of Solid State Science and Technology 10 (3), 035003, 2021 | 14 | 2021 |
| Numerical analysis of deterministic switching of a perpendicularly magnetized spin-orbit torque memory cell RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov IEEE Journal of the Electron Devices Society 9, 61-67, 2020 | 11 | 2020 |
| Finite element approach for the simulation of modern MRAM devices S Fiorentini, NP Jørstad, J Ender, RL de Orio, S Selberherr, M Bendra, ... Micromachines 14 (5), 898, 2023 | 10 | 2023 |
| Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach T Hadámek, S Fiorentini, M Bendra, J Ender, RL de Orio, W Gös, ... Solid-State Electronics 193, 108269, 2022 | 10 | 2022 |
| Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias E Baer, P Evanschitzky, J Lorenz, F Roger, R Minixhofer, L Filipovic, ... Microelectronic Engineering 137, 141-145, 2015 | 10 | 2015 |
| The effect of copper grain size statistics on the electromigration lifetime distribution RL de Orio, H Ceric, J Cervenka, S Selberherr 2009 International Conference on Simulation of Semiconductor Processes and …, 2009 | 10 | 2009 |
| Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer RL De Orio, A Makarov, W Goes, J Ender, S Fiorentini, V Sverdlov Physica B: Condensed Matter 578, 411743, 2020 | 9 | 2020 |
| Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds H Ceric, H Zahedmanesh, K Croes, R Lacerda de Orio, S Selberherr Journal of Applied Physics 133 (10), 2023 | 7 | 2023 |
| Effects of sidewall scallops on the performance and reliability of filled copper and open tungsten TSVs L Filipovic, RL de Orio, S Selberherr Proceedings of the 21th International Symposium on the Physical and Failure …, 2014 | 7 | 2014 |
| Interconnect reliability dependence on fast diffusivity paths H Ceric, RL de Orio, S Selberherr Microelectronics Reliability 52 (8), 1532-1538, 2012 | 7 | 2012 |
| Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress RL de Orio, H Ceric, S Selberherr Journal of Computational Electronics 7 (3), 128-131, 2008 | 7 | 2008 |
