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| Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur Journal of Non-Crystalline Solids 303 (1), 134-138, 2002 | 239 | 2002 |
| Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre Applied physics letters 96 (15), 2010 | 202 | 2010 |
| Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ... Journal of Applied Physics 120 (12), 2016 | 188 | 2016 |
| Wide spectral photoresponse of layered platinum diselenide-based photodiodes C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ... Nano Letters 18 (3), 1794-1800, 2018 | 183 | 2018 |
| A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 2011 | 172 | 2011 |
| Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ... Solid-State Electronics 51 (4), 622-626, 2007 | 165 | 2007 |
| Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk Solid-State Electronics 53 (4), 438-444, 2009 | 164 | 2009 |
| Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ... Applied Physics Letters 94 (10), 2009 | 128 | 2009 |
| interface properties following rapid thermal processing BJ O’sullivan, PK Hurley, C Leveugle, JH Das Journal of Applied Physics 89 (7), 3811-3820, 2001 | 100 | 2001 |
| Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ... 2D Materials 5 (3), 031002, 2018 | 93 | 2018 |
| Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ... npj 2D Materials and Applications 3 (1), 33, 2019 | 89 | 2019 |
| Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ... Journal of Applied Physics 104 (6), 2008 | 85 | 2008 |
| Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ... Thin Solid Films 428 (1-2), 263-268, 2003 | 77 | 2003 |
| Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe2 Field‐Effect Transistors A Grillo, E Faella, A Pelella, F Giubileo, L Ansari, F Gity, PK Hurley, ... Advanced Functional Materials 31 (43), 2105722, 2021 | 76 | 2021 |
| Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young Applied Physics Letters 111 (3), 2017 | 76 | 2017 |
| Insights into Multilevel Resistive Switching in Monolayer MoS2 S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ... ACS applied materials & interfaces 12 (5), 6022-6029, 2020 | 73 | 2020 |
| In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ... Applied Physics Letters 92 (2), 2008 | 72 | 2008 |
| Interface of ultrathin HfO2 films deposited by UV-photo-CVD Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'sullivan, PK Hurley, ... Thin Solid Films 453, 203-207, 2004 | 72 | 2004 |
| An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ... Journal of Applied Physics 114 (14), 2013 | 69 | 2013 |