Articles with public access mandates - philippe galyLearn more
Not available anywhere: 14
Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing
BC Paz, L Le Guevel, M Casse, G Billiot, G Pillonnet, AGM Jansen, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandates: European Commission
Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K
M Cassé, B Cardoso Paz, G Ghibaudo, T Poiroux, E Vincent, P Galy, ...
Applied Physics Letters 116 (24), 2020
Mandates: European Commission
Low-power Z2-FET capacitorless 1T-DRAM
MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
Mandates: European Commission
Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory
H El Dirani, M Bawedin, K Lee, M Parihar, X Mescot, P Fonteneau, P Galy, ...
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016
Mandates: European Commission
Integrated variability measurements of 28 nm FDSOI MOSFETs down to 4.2 K for cryogenic CMOS applications
BC Paz, L Le Guevel, M Cassé, G Billiot, G Pillonnet, A Jansen, ...
2020 IEEE 33rd International Conference on Microelectronic Test Structures …, 2020
Mandates: European Commission
Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology
S Athanasiou, CA Legrand, S Cristoloveanu, P Galy
Solid-State Electronics 128, 172-179, 2017
Mandates: European Commission
GDNMOS: A new high voltage device for ESD protection in 28nm UTBB FD-SOI technology
S Athanasiou, CA Legrand, S Cristoloveanu, P Galy
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
Mandates: European Commission
FDSOI for cryoCMOS electronics: device characterization towards compact model
M Cassé, BC Paz, F Bergamaschi, G Ghibaudo, F Serra, G Billiot, ...
2022 International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2022
Mandates: European Commission
Electrostatics and channel coupling on 28 nm FD-SOIfor cryogenic applications
BC Paz, M Cassé, S Haendler, A Juge, E Vincent, P Galy, F Arnaud, ...
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
Mandates: European Commission
Evaluation of thin-oxide Z2-FET DRAM cell
S Navarro, KH Lee, C Marquez, C Navarro, M Parihar, H Park, P Galy, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
Mandates: European Commission
Memory operations of zero impact ionization, zero subthreshold swing FET matrix without selectors
S Kwon, C Navarro, P Galy, S Cristoloveanu, F Gamiz, J Ahn, YT Kim
IEEE Electron Device Letters 41 (3), 361-364, 2020
Mandates: European Commission
Z2-FET memory matrix in 28 nm FDSOI technology
MS Parihar, KH Lee, HJ Park, C Navarro, J Lacord, F Gamiz, P Galy, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
Mandates: European Commission
Capacitance RF characterization and modeling of 28 FD-SOI CMOS transistors down to cryogenic temperature
Q Berlingard, J Lugo-Alvarez, M Bawedin, T Mota-Frutuoso, C Durand, ...
2023 18th European Microwave Integrated Circuits Conference (EuMIC), 37-40, 2023
Mandates: Agence Nationale de la Recherche
Capacitorless memory devices using virtual junctions
F Gamiz, S Navarro, C Navarro, C Marquez, C Sampedro, L Donetti, ...
2019 19th International Workshop on Junction Technology (IWJT), 1-3, 2019
Mandates: European Commission
Available somewhere: 21
Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening
H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ...
IEEE Electron Device Letters 40 (5), 784-787, 2019
Mandates: European Commission
Cryogenic temperature characterization of a 28-nm FD-SOI dedicated structure for advanced CMOS and quantum technologies co-integration
P Galy, JC Lemyre, P Lemieux, F Arnaud, D Drouin, M Pioro-Ladriere
IEEE Journal of the Electron Devices Society 6, 594-600, 2018
Mandates: Natural Sciences and Engineering Research Council of Canada, Canada First …
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
Mandates: European Commission
Experimental Demonstration of Operational Z2-FET Memory Matrix
S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ...
IEEE Electron Device Letters 39 (5), 660-663, 2018
Mandates: European Commission
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
BC Paz, M Cassé, S Haendler, A Juge, E Vincent, P Galy, F Arnaud, ...
Solid-State Electronics 186, 108071, 2021
Mandates: European Commission
Computation of self-induced magnetic field effects including the lorentz force for fast-transient phenomena in integrated-circuit devices
W Schoenmaker, Q Chen, P Galy
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2014
Mandates: Research Grants Council, Hong Kong
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