| Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ... IEEE Electron Device Letters 40 (5), 784-787, 2019 | 132 | 2019 |
| Cryogenic temperature characterization of a 28-nm FD-SOI dedicated structure for advanced CMOS and quantum technologies co-integration P Galy, JC Lemyre, P Lemieux, F Arnaud, D Drouin, M Pioro-Ladriere IEEE Journal of the Electron Devices Society 6, 594-600, 2018 | 95 | 2018 |
| A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ... Solid-State Electronics 143, 10-19, 2018 | 59 | 2018 |
| 28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing H Bohuslavskyi, S Barraud, M Cassé, V Barrai, B Bertrand, L Hutin, ... 2017 Silicon Nanoelectronics Workshop (SNW), 143-144, 2017 | 55 | 2017 |
| Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing BC Paz, L Le Guevel, M Casse, G Billiot, G Pillonnet, AGM Jansen, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 53 | 2020 |
| Extended Analysis of the -FET: Operation as Capacitorless eDRAM C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ... IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017 | 45 | 2017 |
| First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration D Golanski, P Fonteneau, C Fenouillet-Beranger, A Cros, F Monsieur, ... 2013 Symposium on VLSI Circuits, T124-T125, 2013 | 40 | 2013 |
| Cryogenic characterization of 28-nm FD-SOI ring oscillators with energy efficiency optimization H Bohuslavskyi, S Barraud, V Barral, M Cassé, L Le Guevel, L Hutin, ... IEEE Transactions on Electron Devices 65 (9), 3682-3688, 2018 | 37 | 2018 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 35 | 2017 |
| Evidence of supercoupling effect in ultrathin silicon layers using a four-gate MOSFET S Cristoloveanu, S Athanasiou, M Bawedin, P Galy IEEE Electron Device Letters 38 (2), 157-159, 2016 | 33 | 2016 |
| Electronic device, in particular for protection against electrostatic discharges, and method for protecting a component against electrostatic discharges J Bourgeat, C Entringer, P Galy, J Jimenez US Patent 9,019,666, 2015 | 33 | 2015 |
| Experimental Demonstration of Operational Z2-FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ... IEEE Electron Device Letters 39 (5), 660-663, 2018 | 32 | 2018 |
| Structure for protecting an integrated circuit against electrostatic discharges P Galy, C Entringer, J Bourgeat US Patent 8,331,069, 2012 | 31 | 2012 |
| BIMOS transistor and its applications in ESD protection in advanced CMOS technology P Galy, J Jimenez, J Bourgeat, A Dray, G Troussier, B Heitz, N Guitard, ... 2012 IEEE International Conference on IC Design & Technology, 1-4, 2012 | 31 | 2012 |
| Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature BC Paz, M Cassé, S Haendler, A Juge, E Vincent, P Galy, F Arnaud, ... Solid-State Electronics 186, 108071, 2021 | 27 | 2021 |
| Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K M Cassé, B Cardoso Paz, G Ghibaudo, T Poiroux, E Vincent, P Galy, ... Applied Physics Letters 116 (24), 2020 | 23 | 2020 |
| Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs T Benoist, C Fenouillet-Beranger, P Perreau, C Buj, P Galy, ... Microelectronic Engineering 88 (7), 1276-1279, 2011 | 22 | 2011 |
| Local ESD protection structure based on silicon controlled rectifier achieving very low overshoot voltage J Bourgeat, C Entringer, P Galy, P Fonteneau, M Bafleur 2009 31st EOS/ESD Symposium, 1-8, 2009 | 21 | 2009 |
| Robust technology computer-aided design of gated quantum dots at cryogenic temperature F Beaudoin, P Philippopoulos, C Zhou, I Kriekouki, M Pioro-Ladrière, ... Applied physics letters 120 (26), 2022 | 20 | 2022 |
| ESD design challenges in 28nm hybrid FDSOI/Bulk advanced CMOS process A Dray, N Guitard, P Fonteneau, D Golanski, C Fenouillet-Beranger, ... Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, 1-7, 2012 | 19 | 2012 |
Maryline BawedinIMEP-LAHC/ Genoble INPVerified email at grenoble-inp.fr
