| Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee IEEE Electron Device Letters 21 (4), 181-183, 2000 | 346 | 2000 |
| Bonding states and electrical properties of ultrathin gate dielectrics CS Kang, HJ Cho, K Onishi, R Nieh, R Choi, S Gopalan, S Krishnan, ... Applied Physics Letters 81 (14), 2593-2595, 2002 | 209 | 2002 |
| A critical review on the utilization of storage and demand response for the implementation of renewable energy microgrids FC Robert, GS Sisodia, S Gopalan Sustainable cities and society 40, 735-745, 2018 | 173 | 2018 |
| MOSFET devices with polysilicon on single-layer HfO/sub 2/high-K dielectrics L Kang, K Onishi, Y Jeon, BH Lee, C Kang, WJ Qi, R Nieh, S Gopalan, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 153 | 2000 |
| Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/) BH Lee, R Choi, L Kang, S Gopalan, R Nieh, K Onishi, Y Jeon, WJ Qi, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 130 | 2000 |
| Improvement of surface carrier mobility of HfO/sub 2/MOSFETs by high-temperature forming gas annealing K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, RE Nieh, SA Krishnan, ... IEEE Transactions on Electron Devices 50 (2), 384-390, 2003 | 128 | 2003 |
| High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by post-deposition anneal MS Akbar, S Gopalan, HJ Cho, K Onishi, R Choi, R Nieh, CS Kang, ... Applied physics letters 82 (11), 1757-1759, 2003 | 104 | 2003 |
| High-quality ultra-thin HfO/sub 2/gate dielectric MOSFETs with TaN electrode and nitridation surface preparation R Choi, CS Kang, BH Lee, K Onishi, R Nieh, S Gopalan, E Dharmarajan, ... 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001 | 99 | 2001 |
| Evaluation of silicon surface nitridation effects on ultra-thin gate dielectrics R Nieh, R Choi, S Gopalan, K Onishi, CS Kang, HJ Cho, S Krishnan, ... Applied physics letters 81 (9), 1663-1665, 2002 | 89 | 2002 |
| Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 83 | 2004 |
| Structural and electrical properties of HfO2 with top nitrogen incorporated layer HJ Cho, CS Kang, K Onishi, S Gopalan, R Nieh, R Choi, S Krishnan, ... IEEE Electron Device Letters 23 (5), 249-251, 2002 | 80 | 2002 |
| Low cost, highly reliable rural electrification through a combination of grid extension and local renewable energy generation FC Robert, S Gopalan Sustainable cities and society 42, 344-354, 2018 | 69 | 2018 |
| IoT based low cost single sensor node remote health monitoring system VV Garbhapu, S Gopalan Procedia computer science 113, 408-415, 2017 | 66 | 2017 |
| Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO_2 MOSFET's K Onishi Technical Digest of International Electron Devices Meeting, 2001, 2001 | 66 | 2001 |
| Area dependence of TDDB characteristics for HfO2 gate dielectrics YH Kim, K Onishi, CS Kang, HJ Cho, R Nieh, S Gopalan, R Choi, J Han, ... IEEE Electron Device Letters 23 (10), 594-596, 2002 | 60 | 2002 |
| Effects of high-temperature forming gas anneal on HfO/sub 2/MOSFET performance K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, R Nieh, S Krishnan, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 58 | 2002 |
| Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates S Gopalan, K Onishi, R Nieh, CS Kang, R Choi, HJ Cho, S Krishnan, ... Applied physics letters 80 (23), 4416-4418, 2002 | 56 | 2002 |
| S. Gopalan, R. Choi, and JC Lee KO Kang, Y Jeon, BH Lee, C Kang, WJ Qi, R Nieh Tech. Dig.-Int. Electron Devices Meet 35, 2000 | 54 | 2000 |
| Electron Devices Meeting, 2000. IEDM Technical Digest BH Lee, R Choi, L Kang, S Gopalan, R Nieh, K Onishi, Y Jeon, WJ Qi, ... IEEE, New York, NY pp 2, 1-2.4, 2000 | 48 | 2000 |
| Single-layer thin HfO/sub 2/gate dielectric with n+-polysilicon gate L Kang, Y Jeon, K Onishi, BH Lee, WJ Qi, R Nieh, S Gopalan, JC Lee 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000 | 46 | 2000 |
