| Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators K Jeon, JJ Ryu, S Im, HK Seo, T Eom, H Ju, MK Yang, DS Jeong, GH Kim Nature communications 15 (1), 129, 2024 | 23 | 2024 |
| Material and structural engineering of ovonic threshold switch for highly reliable performance HK Seo, JJ Ryu, SY Lee, M Park, SG Park, W Song, GH Kim, MK Yang Advanced Electronic Materials 8 (9), 2200161, 2022 | 11 | 2022 |
| Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device HK Seo, JJ Ryu, SY Lee, K Jeon, H Sohn, GH Kim, MK Yang Advanced Electronic Materials 9 (8), 2300165, 2023 | 5 | 2023 |
| Highly reliable ovonic threshold switch with TiN/GeTe/TiN structure D Seong, SY Lee, HK Seo, JW Kim, M Park, MK Yang Materials 16 (5), 2066, 2023 | 5 | 2023 |
| Superior artificial synaptic properties applicable to neuromorphic computing system in HfOx-based resistive memory with high recognition rates HK Seo, SY Lee, MK Yang Discover Nano 18 (1), 90, 2023 | 4 | 2023 |
| Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film SY Jeong, J Jung, HK Seo, JS Jeong, JH Lee, GH Kim, MK Yang Results in Engineering 24, 102906, 2024 | 2 | 2024 |
| Quad-level cell switching with excellent reliability in TiN/AlOx: Ti/TaOx/TiN memory device HJ Shin, HK Seo, SY Lee, M Park, SG Park, MK Yang Materials 15 (7), 2402, 2022 | 2 | 2022 |
| Ag-dispersive chalcogenide media for readily activated electronic memristor SY Lee, JJ Ryu, HK Seo, H Sohn, GH Kim, MK Yang Applied Surface Science 644, 158747, 2024 | 1 | 2024 |
| Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film JW Kim, HK Seo, SY Lee, M Park, MK Yang, BK Ju Metals 12 (10), 1663, 2022 | 1 | 2022 |
| Self-Rectifying Resistive Switching Device for 1k Crossbar Array Structure Hyun Kyu Seo, Su Yeon Lee, Se Yeon Jeong, June Hyuk Lee, Min Kyung Lee, Min ... The 31st Korean Conference on Semiconductors, 2024 | | 2024 |
| Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device (Adv. Electron. Mater. 8/2023) HK Seo, JJ Ryu, SY Lee, K Jeon, H Sohn, GH Kim, MK Yang Advanced Electronic Materials 9 (8), 2370038, 2023 | | 2023 |
| Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices SY Lee, HK Seo, SY Jeong, MK Yang Materials 16 (12), 4315, 2023 | | 2023 |
| Reliable Multiply-Accumulate Operation of a Ru/TaOx/Si:ZrOx/TiN Stacked Device Hyun Kyu Seo, Su Yeon Lee, Se Yeon Jeong, June Hyuk Lee, Min Kyu Yang European Materials Research Society (E-MRS), 2023 | | 2023 |
| Multiply and Accumulation operation of Si:ZrOx based self-rectifying resistive memory in 16x16 crossbar array Hyun Kyu Seo, Su Yeon Lee, Se Yeon Jeong, June Hyuk Lee, Min Kyu Yang The Korean Society of Semiconductor & Display Technology, 2023 | | 2023 |
| Long-term Synaptic Plasticity of Resistive Memory with Self-rectifying Characteristics Hyun Kyu Seo, Su Yeon Lee, Se Yeon Jeong, June Hyuk Lee, Jong-Woo Kim, Min ... THE KOREAN CERAMIC SOCIETY, 2023 | | 2023 |
| Self-rectifying Resistive Memory with Reliable Multiply-and-Accumulation Operation in Crossbar Array Hyun Kyu Seo, Su Yeon Lee, Min Kyu Yang The 30th Korean Conference on Semiconductors, 2023 | | 2023 |
| Bi-Layer Resistive Switching Memory with QLC Switching Characteristics Using ISPP Algorithm Hyun Kyu Seo, Su Yeon Lee, Min Kyu Yang The Korean Institute of Metals and Materials, 2022 | | 2022 |
| Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance (Adv. Electron. Mater. 9/2022). HK Seo, JJ Ryu, SY Lee, M Park, SG Park, W Song, GH Kim, MK Yang Advanced Electronic Materials 8 (9), 2022 | | 2022 |
| Improving Functions of Tellurium-based Ovonic Threshold Switch through Material doping Hyun Kyu Seo, Jin Joo Ryu, Su Yeon Lee, Wooseok Song, Gun Hwan Kim, Min Kyu Yang The 29th Korean Conference on Semiconductors, 2022 | | 2022 |
| A Qualitative Structural Analysis of Germanium Telluride Thin Films for a Reliable Threshold Switching Device JJ Ryu, S Park, HK Seo, T Eom, H Sohn, J Chang, MK Yang, GH Kim Available at SSRN 4747708, 0 | | |
