| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 914 | 2011 |
| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 309 | 2009 |
| Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ... IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012 | 221 | 2012 |
| Complete experimental test of kinetic models for rapid alloy solidification JA Kittl, PG Sanders, MJ Aziz, DP Brunco, MO Thompson Acta materialia 48 (20), 4797-4811, 2000 | 163 | 2000 |
| Ni-and Co-based silicides for advanced CMOS applications JA Kittl, A Lauwers, O Chamirian, M Van Dal, A Akheyar, M De Potter, ... Microelectronic Engineering 70 (2-4), 158-165, 2003 | 150 | 2003 |
| Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines JA Kittl, DA Prinslow, PP Apte, MF Pas Applied physics letters 67 (16), 2308-2310, 1995 | 127 | 1995 |
| Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ... 2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012 | 119 | 2012 |
| Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells L Goux, K Opsomer, R Degraeve, R Müller, C Detavernier, DJ Wouters, ... Applied Physics Letters 99 (5), 2011 | 118 | 2011 |
| Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition G Rampelberg, M Schaekers, K Martens, Q Xie, D Deduytsche, ... Applied Physics Letters 98 (16), 2011 | 117 | 2011 |
| SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ... 2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018 | 115 | 2018 |
| Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ... 2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012 | 96 | 2012 |
| High current effects in silicide films for sub-0.25/spl mu/m VLSI technologies K Banerjee, C Hu, A Amerasekera, JA Kittl 1998 IEEE International Reliability Physics Symposium Proceedings. 36th …, 1998 | 94 | 1998 |
| Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 90 | 2012 |
| Work function of Ni silicide phases on HfSiON and SiO/sub 2: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates JA Kittl, MA Pawlak, A Lauwers, C Demeurisse, K Opsomer, KG Anil, ... IEEE electron device letters 27 (1), 34-36, 2005 | 87 | 2005 |
| Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies JA Kittl, QZ Hong Thin Solid Films 320 (1), 110-121, 1998 | 86 | 1998 |
| A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl Applied Physics Letters 100 (4), 2012 | 85 | 2012 |
| Ni based silicides for 45 nm CMOS and beyond A Lauwers, JA Kittl, MJH Van Dal, O Chamirian, MA Pawlak, M de Potter, ... Materials Science and Engineering: B 114, 29-41, 2004 | 85 | 2004 |
| Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments R Degraeve, P Roussel, L Goux, D Wouters, J Kittl, L Altimime, M Jurczak, ... 2010 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2010 | 82 | 2010 |
| Nonequilibrium partitioning during rapid solidification of Si As alloys JA Kittl, MJ Aziz, DP Brunco, MO Thompson Journal of crystal growth 148 (1-2), 172-182, 1995 | 82 | 1995 |
| Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device Y Yin Chen, G Pourtois, C Adelmann, L Goux, B Govoreanu, R Degreave, ... Applied Physics Letters 100 (11), 2012 | 80 | 2012 |