| SiGe nanostructures: new insights into growth processes I Berbezier, A Ronda, A Portavoce Journal of Physics: Condensed Matter 14 (35), 8283, 2002 | 92 | 2002 |
| Sb-surfactant-mediated growth of Si and Ge nanostructures A Portavoce, I Berbezier, A Ronda Physical Review B 69 (15), 155416, 2004 | 78 | 2004 |
| Grain-boundary segregation of boron in high-strength steel studied by nano-SIMS and atom probe tomography G Da Rosa, P Maugis, A Portavoce, J Drillet, N Valle, E Lentzen, ... Acta Materialia 182, 226-234, 2020 | 74 | 2020 |
| Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si (001) surfaces A Portavoce, M Kammler, R Hull, MC Reuter, FM Ross Nanotechnology 17 (17), 4451, 2006 | 67 | 2006 |
| Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si D Mangelinck, K Hoummada, A Portavoce, C Perrin, R Daineche, ... Scripta Materialia 62 (8), 568-571, 2010 | 62 | 2010 |
| Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities I Berbezier, A Ronda, A Portavoce, N Motta Applied Physics Letters 83 (23), 4833-4835, 2003 | 61 | 2003 |
| Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation A Portavoce, R Hull, MC Reuter, FM Ross Physical Review B—Condensed Matter and Materials Physics 76 (23), 235301, 2007 | 51 | 2007 |
| Morphological evolution of SiGe layers I Berbezier, A Ronda, F Volpi, A Portavoce Surface science 531 (3), 231-243, 2003 | 45 | 2003 |
| Tungsten diffusion in silicon A De Luca, A Portavoce, M Texier, C Grosjean, N Burle, V Oison, ... Journal of Applied Physics 115 (1), 2014 | 43 | 2014 |
| Composition measurement of the Ni-silicide transient phase by atom probe tomography K Hoummada, I Blum, D Mangelinck, A Portavoce Applied Physics Letters 96 (26), 2010 | 41 | 2010 |
| Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si (001) A Portavoce, M Kammler, R Hull, MC Reuter, M Copel, FM Ross Physical Review B—Condensed Matter and Materials Physics 70 (19), 195306, 2004 | 40 | 2004 |
| Sb-surfactant mediated growth of Ge nanostructures A Portavoce, A Ronda, I Berbezier Materials Science and Engineering: B 89 (1-3), 205-210, 2002 | 36 | 2002 |
| Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing R Milazzo, G Impellizzeri, D Piccinotti, D De Salvador, A Portavoce, ... Applied Physics Letters 110 (1), 2017 | 34 | 2017 |
| Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress A Portavoce, I Berbezier, P Gas, A Ronda Physical Review B 69 (15), 155414, 2004 | 34 | 2004 |
| Atom probe tomography for advanced metallization D Mangelinck, F Panciera, K Hoummada, M El Kousseifi, C Perrin, ... Microelectronic engineering 120, 19-33, 2014 | 33 | 2014 |
| Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge Z Balogh, Z Erdélyi, DL Beke, GA Langer, A Csik, HG Boyen, U Wiedwald, ... Applied Physics Letters 92 (14), 2008 | 33 | 2008 |
| Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots A Portavoce, F Volpi, A Ronda, P Gas, I Berbezier Thin Solid Films 380 (1-2), 164-168, 2000 | 32 | 2000 |
| Progress in the understanding of Ni silicide formation for advanced MOS structures D Mangelinck, K Hoummada, F Panciera, M El Kousseifi, I Blum, ... physica status solidi (a) 211 (1), 152-165, 2014 | 31 | 2014 |
| Manganese diffusion in monocrystalline germanium A Portavoce, O Abbes, Y Rudzevich, L Chow, V Le Thanh, C Girardeaux Scripta Materialia 67 (3), 269-272, 2012 | 31 | 2012 |
| Nanometric size effect on Ge diffusion in polycrystalline Si A Portavoce, G Chai, L Chow, J Bernardini Journal of Applied Physics 104 (10), 2008 | 30 | 2008 |