Articles with public access mandates - Motoaki IwayaLearn more
Not available anywhere: 14
Improvement of 650-nm red-emitting GaIn0. 17N/GaIn0. 38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration
R Takahashi, R Fujiki, K Hozo, R Hiramatsu, M Matsukura, T Kojima, ...
Applied Physics Letters 120 (14), 2022
Mandates: Japan Science and Technology Agency
Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN
K Shojiki, M Shimokawa, S Iwayama, T Omori, S Teramura, A Yamaguchi, ...
Applied Physics Express 15 (5), 051004, 2022
Mandates: Japan Science and Technology Agency
Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation
R Kondo, A Yabutani, T Omori, K Yamada, E Matsubara, R Hasegawa, ...
Applied Physics Letters 121 (25), 2022
Mandates: Japan Science and Technology Agency
Effects of Mg dopant in Al-composition-graded Al x Ga1− x N (0.45≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction
K Sato, K Yamada, K Sakowski, M Iwaya, T Takeuchi, S Kamiyama, ...
Applied Physics Express 14 (9), 096503, 2021
Mandates: National Science Centre, Poland
Superlattice-induced variations in morphological and emission properties of GaInN/GaN multiquantum nanowire-based micro-LEDs
S Inaba, W Lu, K Ito, S Katsuro, N Nakayama, A Shima, Y Jinno, ...
ACS Applied Materials & Interfaces 14 (44), 50343-50353, 2022
Mandates: National Natural Science Foundation of China, Japan Science and Technology …
Hydrogen in-situ etching of GaN surface to reduce non-radiative recombination centers in 510-nm GaInN/GaN quantum-wells
R Fujiki, R Takahashi, R Hiramatsu, K Hozo, DP Han, M Iwaya, ...
Journal of Crystal Growth 593, 126751, 2022
Mandates: Japan Science and Technology Agency
Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency
DP Han, M Iwaya, T Takeuchi, S Kamiyama
ACS Applied Materials & Interfaces 14 (22), 26264-26270, 2022
Mandates: Japan Science and Technology Agency
In situ cavity length control of GaN-based vertical-cavity surface-emitting lasers with in situ reflectivity spectra measurements
T Nagasawa, K Kobayashi, R Watanabe, T Takeuchi, S Kamiyama, ...
Japanese Journal of Applied Physics 62 (6), 066504, 2023
Mandates: Japan Science and Technology Agency
High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning
K Shibata, T Nagasawa, K Kobayashi, R Watanabe, T Tanaka, T Takeuchi, ...
Applied Physics Express 15 (11), 112007, 2022
Mandates: Japan Science and Technology Agency
A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water
E Matsubara, R Hasegawa, T Nishibayashi, A Yabutani, R Yamada, ...
Applied Physics Express 15 (11), 116502, 2022
Mandates: Japan Science and Technology Agency
Exfoliation mechanism of AlGaN-based thin films using heated-pressurized water
R Yamada, E Matsubara, R Kondo, T Nishibayashi, K Hattori, Y Imoto, ...
Applied Physics Express 16 (10), 105504, 2023
Mandates: Japan Science and Technology Agency
Growth and light properties of fluorescent SiC for white LEDs
M Syväjärvi, R Yakimova, M Iwaya, T Takeuchi, I Akasaki, S Kamiyama
Materials Science Forum 717, 87-92, 2012
Mandates: Swedish Research Council
N-type conducting AlInN/GaN distributed Bragg reflectors with AlGaN graded layers
K Kobayashi, K Shibata, T Nagasawa, R Watanabe, K Usui, T Takeuchi, ...
Japanese Journal of Applied Physics 62 (SN), SN1012, 2023
Mandates: Japan Science and Technology Agency
Stray light reduction in monolithic GaInN-based μLED arrays for high-definition display realization
T Saito, Y Imaizumi, K Kobayashi, Y Suehiro, N Koide, T Takeuchi, ...
Japanese Journal of Applied Physics 62 (9), 090904, 2023
Mandates: Japan Science and Technology Agency
Available somewhere: 11
Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles
D Iida, A Fadil, Y Chen, Y Ou, O Kopylov, M Iwaya, T Takeuchi, ...
AIP Advances 5 (9), 2015
Mandates: National Natural Science Foundation of China, Danish Council for Technology …
RGB monolithic GaInN-based μLED arrays connected via tunnel junctions
T Saito, N Hasegawa, K Imura, Y Suehiro, T Takeuchi, S Kamiyama, ...
Applied Physics Express 16 (8), 084001, 2023
Mandates: Japan Science and Technology Agency
Thermal conductivity of epitaxial layers
DQ Tran, RD Carrascon, M Iwaya, B Monemar, V Darakchieva, ...
Physical Review Materials 6 (10), 104602, 2022
Mandates: Swedish Research Council, Vinnova, Sweden
Quasi-Ballistic Thermal Conduction in 6H-SiC
Z Cheng, W Lu, J Shi, D Tanaka, NH Protik, S Wang, M Iwaya, T Takeuchi, ...
arXiv preprint arXiv:2102.07683, 2021
Mandates: US Department of Defense
Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs
S Katsuro, W Lu, K Ito, N Nakayama, S Yamamura, Y Jinno, S Inaba, ...
Nanophotonics 11 (21), 4793-4804, 2022
Mandates: National Natural Science Foundation of China, Japan Science and Technology …
Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays
S Katsuro, W Lu, K Ito, N Nakayama, S Inaba, A Shima, S Yamamura, ...
Nanophotonics 12 (15), 3077-3087, 2023
Mandates: National Natural Science Foundation of China, Japan Science and Technology …
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