| Universal control of a six-qubit quantum processor in silicon SGJ Philips, MT Mądzik, SV Amitonov, SL de Snoo, M Russ, N Kalhor, ... Nature, 919-924, 2022 | 304 | 2022 |
| Quantum dot arrays in silicon and germanium WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ... Applied Physics Letters 116 (8), 2020 | 150 | 2020 |
| Spin-orbit coupling and phase coherence in InAs nanowires S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ... Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010 | 124 | 2010 |
| Probing relaxation times in graphene quantum dots C Volk, C Neumann, S Kazarski, S Fringes, S Engels, F Haupt, A Müller, ... Nature Communications 4 (1), 1753, 2013 | 101 | 2013 |
| Loading a quantum-dot based “Qubyte” register C Volk, AMJ Zwerver, U Mukhopadhyay, PT Eendebak, CJ van Diepen, ... npj Quantum Information 5 (1), 29, 2019 | 93 | 2019 |
| Transport in graphene nanostructures C Stampfer, S Fringes, J Güttinger, F Molitor, C Volk, B Terrés, J Dauber, ... Frontiers of Physics 6, 271-293, 2011 | 83 | 2011 |
| Effect of Si-doping on InAs nanowire transport and morphology S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ... Journal of applied physics 110 (5), 2011 | 81 | 2011 |
| Single-electron double quantum dots in bilayer graphene L Banszerus, S Möller, E Icking, K Watanabe, T Taniguchi, C Volk, ... Nano letters 20 (3), 2005-2011, 2020 | 67 | 2020 |
| Electron–hole crossover in gate-controlled bilayer graphene quantum dots L Banszerus, A Rothstein, T Fabian, S Moller, E Icking, S Trellenkamp, ... Nano letters 20 (10), 7709-7715, 2020 | 62 | 2020 |
| Etched graphene quantum dots on hexagonal boron nitride S Engels, A Epping, C Volk, S Korte, B Voigtländer, K Watanabe, ... Applied Physics Letters 103 (7), 2013 | 61 | 2013 |
| Electronic excited states in bilayer graphene double quantum dots C Volk, S Fringes, B Terrés, J Dauber, S Engels, S Trellenkamp, ... Nano letters 11 (9), 3581-3586, 2011 | 57 | 2011 |
| Spin-valley coupling in single-electron bilayer graphene quantum dots L Banszerus, S Möller, C Steiner, E Icking, S Trellenkamp, F Lentz, ... Nature communications 12 (1), 5250, 2021 | 52 | 2021 |
| Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios B Terrés, J Dauber, C Volk, S Trellenkamp, U Wichmann, C Stampfer Applied physics letters 98 (3), 2011 | 45 | 2011 |
| Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene E Icking, L Banszerus, F Wörtche, F Volmer, P Schmidt, C Steiner, ... Advanced Electronic Materials 8 (11), 2200510, 2022 | 41 | 2022 |
| Spin relaxation in a single-electron graphene quantum dot L Banszerus, K Hecker, S Möller, E Icking, K Watanabe, T Taniguchi, ... Nature Communications 13 (1), 1-6, 2022 | 40 | 2022 |
| Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate C Volk, A Chatterjee, F Ansaloni, CM Marcus, F Kuemmeth Nano letters 19 (8), 5628-5633, 2019 | 37 | 2019 |
| Charge detection in a bilayer graphene quantum dot S Fringes, C Volk, C Norda, B Terrés, J Dauber, S Engels, S Trellenkamp, ... physica status solidi (b) 248 (11), 2684-2687, 2011 | 37 | 2011 |
| Qubit device integration using advanced semiconductor manufacturing process technology R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ... 2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018 | 36 | 2018 |
| Reducing disorder in graphene nanoribbons by chemical edge modification J Dauber, B Terrés, C Volk, S Trellenkamp, C Stampfer Applied physics letters 104 (8), 2014 | 32 | 2014 |
| Graphene-based charge sensors C Neumann, C Volk, S Engels, C Stampfer Nanotechnology 24 (44), 444001, 2013 | 30 | 2013 |
Christoph StampferRWTH AachenVerified email at physik.rwth-aachen.de