evangelisti f.

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Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance MicroelectronicsVerified email at uniroma3.it
Vittorio FogliettiSPIN-CNR Superconductors, oxides and other innovative materials and devicesVerified email at spin.cnr.it
Michele OrtolaniSapienza University of RomeVerified email at roma1.infn.it
Roberto LeoniINSTITUTE FOR PHOTONCS AND NANOTECHNOLOGIES, CNR - retiredVerified email at ifn.cnr.it
Adriano FilipponiDipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell'Aquila, ItalyVerified email at univaq.it
gaetano assantoNooEL-University Roma TreVerified email at uniroma3.it
Corrado SpinellaInstitute of Microelectronics and Microsystems - CNRVerified email at imm.cnr.it
Giordano ScappucciQuTech, TU DelftVerified email at tudelft.nl
Guglielmo FortunatoIMM-CNRVerified email at cnr.it
Michele VirgilioPhysics Department, Pisa UniversityVerified email at df.unipi.it
Alberto MittigaSenior scientist, ENEA Verified email at enea.it
Gian Piero GalleranoResearch Director (retired) - Radiation Sources, Diagnostics, and Laser-matter interactionVerified email at enea.it
Emilio GiovenaleResearch director at ENEA (Italy)Verified email at enea.it
Andrea DoriaENEA FrascatiVerified email at enea.it
Guido TorrioliIstituto di fotonica e nanotecnologie del CNRVerified email at ifn.cnr.it
Giuseppe NicotraCNR-IMMVerified email at cnr.it
Francesco d'AcapitoCNR-IOM-OGG c/o ESRF LISA CRG GrenobleVerified email at esrf.fr
Fabio BeltramScuola Normale Superiore, Pisa, ItalyVerified email at sns.it
Mauro FalconieriENEAVerified email at enea.it
Gabriele CiascaAssociate Professor of Applied Physics, Università Cattolica del Sacro CuoreVerified email at unicatt.it

evangelisti f.

università di Roma TRE

Verified email at fis.uniroma3.it

solid state physics


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Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Applied Physics Letters 72 (24), 3175-3177, 1998	365	1998
SiGe intermixing in Ge/Si (100) islands G Capellini, M De Seta, F Evangelisti Applied Physics Letters 78 (3), 303-305, 2001	211	2001
Atomic force microscopy lithography as a nanodevice development technique A Notargiacomo, V Foglietti, E Cianci, G Capellini, M Adami, P Faraci, ... Nanotechnology 10 (4), 458, 1999	159	1999
Nature of the dead layer in CdS and its effect on exciton reflectance spectra F Evangelisti, A Frova, F Patella Physical Review B 10 (10), 4253, 1974	119	1974
Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti Physical review letters 75 (18), 3352, 1995	115	1995
Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition G Capellini, L Di Gaspare, F Evangelisti, E Palange Applied Physics Letters 70 (4), 493-495, 1997	104	1997
Dependence of exciton reflectance on field and other surface characteristics: The case of InP F Evangelisti, JU Fischbach, A Frova Physical Review B 9 (4), 1516, 1974	98	1974
Strain relaxation in high Ge content SiGe layers deposited on Si G Capellini, M De Seta, Y Busby, M Pea, F Evangelisti, G Nicotra, ... Journal of Applied Physics 107 (6), 2010	93	2010
Structural investigation of a-Si and a-Si:H using x-ray-absorption spectroscopy at the Si K edge A Filipponi, F Evangelisti, M Benfatto, S Mobilio, CR Natoli Physical Review B 40 (14), 9636, 1989	82	1989
Ordering self-assembled islands without substrate patterning G Capellini, M De Seta, C Spinella, F Evangelisti Applied physics letters 82 (11), 1772-1774, 2003	78	2003
Photoemission studies of amorphous semiconductor heterojunctions F Evangelisti Journal of Non-Crystalline Solids 77, 969-977, 1985	78	1985
Electric-Field—Induced Interference Effects at the Ground Exciton Level in GaAs F Evangelisti, A Frova, JU Fischbach Physical Review Letters 29 (15), 1001, 1972	77	1972
Intermixing-promoted scaling of Ge/Si (100) island sizes M De Seta, G Capellini, F Evangelisti, C Spinella Journal of applied physics 92 (1), 614-619, 2002	68	2002
Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si (100) E Palange, G Capellini, L Di Gaspare, F Evangelisti Applied physics letters 68 (21), 2982-2984, 1996	67	1996
Ge/Si (001) photodetector for near infrared light L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Solid State Phenomena 54, 55-58, 1997	64	1997
Structure of vapor‐deposited Ge films as a function of substrate temperature F Evangelisti, M Garozzo, G Conte Journal of Applied Physics 53 (11), 7390-7396, 1982	64	1982
Direct evidence of C 60 chemical bonding on Si (100) M De Seta, D Sanvitto, F Evangelisti Physical Review B 59 (15), 9878, 1999	57	1999
Exafs investigation of amorphous-to-crystal transition in ge F Evangelisti, MG Proietti, A Balzarotti, F Comin, L Incoccia, S Mobilio Solid State Communications 37 (5), 413-416, 1981	56	1981
Near-and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells Y Busby, M De Seta, G Capellini, F Evangelisti, M Ortolani, M Virgilio, ... Physical Review B—Condensed Matter and Materials Physics 82 (20), 205317, 2010	51	2010
Structure of hydrogenated amorphous silicon-carbon alloys as investigated by extended x-ray-absorption fine structure S Pascarelli, F Boscherini, S Mobilio, F Evangelisti Physical Review B 45 (4), 1650, 1992	49	1992

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