Dietz Nikolaus

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Ian T. FergusonSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State UniversityVerified email at kennesaw.edu
Mustafa AlevliMarmara UniversityVerified email at marmara.edu.tr
A. G. Unil PereraRegent's Professor of Physics, Georgia State UniversityVerified email at gsu.edu
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinVerified email at tu-berlin.de
Matthew KaneAssociate Professor of Marine Engineering and Technology, Texas A&M University (Galveston Campus)Verified email at tamug.edu
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateVerified email at ncsu.edu
Ramon CollazoProfessor of Materials Science and Engineering, NCSUVerified email at ncsu.edu
Ramazan AtalayVerified email at my.centennialcollege.ca
Max BüglerTechnische Universität BerlinVerified email at physik.tu-berlin.de
Ali Kemal OkyayStanford UniversityVerified email at stanford.edu
Sampath GamageUniversity of GeorgiaVerified email at uga.edu
Kazufumi ItoNorth Carolina State UniversityVerified email at math.ncsu.edu
Ronny KirsteResearch associate, NCSUVerified email at ncsu.edu
M. K. I. SenevirathnaAssistant Professor, Center of Excellence for Materials Physics, Department of Physics, CAU, GeorgiaVerified email at cau.edu
V. NarayananIBM T. J. Watson Research CenterVerified email at us.ibm.com
Rudra P BhattaLoudoun County Public School SystemVerified email at lcps.org
Ammar NayfehProfessor in Electrical Engineering Khalifa UniversityVerified email at ku.ac.ae
Raoul SchlesserHexaTech, Inc.Verified email at hexatechinc.com
Farsad Imtiaz ChowdhuryResearch Assistant at University of AlbertaVerified email at ualberta.ca
Sandro CattarinSenior Research Scientist CNR-ICMATE, PadovaVerified email at cnr.it

Dietz Nikolaus

Georgia State University

Verified email at gsu.edu - Homepage

Condensed Matter Physics Group III-V thin film growth Materials diagnostics Optical material characterization


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Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009	169	2009
The growth and optical properties of large, high-quality AlN single crystals M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ... Journal of applied physics 96 (10), 5870-5876, 2004	135	2004
GaN∕ AlGaN ultraviolet/infrared dual-band detector G Ariyawansa, MBM Rinzan, M Alevli, M Strassburg, N Dietz, AGU Perera, ... Applied physics letters 89 (9), 2006	96	2006
Native defect related optical properties of ZnGeP₂ N Dietz, I Tsveybak, W Ruderman, G Wood, KJ Bachmann Applied physics letters 65 (22), 2759-2761, 1994	72	1994
Different optical absorption edges in AlN bulk crystals grown in m-and c-orientations P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, Z Sitar Applied Physics Letters 93 (13), 2008	69	2008
Sellmeier parameters for ZnGaP2 and GaP FL Madarasz, JO Dimmock, N Dietz, KJ Bachmann Journal of Applied Physics 87 (3), 1564-1565, 2000	67	2000
Magnetic and optical properties of Ga1− xMnxN grown by metalorganic chemical vapour deposition MH Kane, A Asghar, CR Vestal, M Strassburg, J Senawiratne, ZJ Zhang, ... Semiconductor science and technology 20 (3), L5, 2005	64	2005
Characterization of InN layers grown by high-pressure chemical vapor deposition M Alevli, G Durkaya, A Weerasekara, AGU Perera, N Dietz, W Fenwick, ... Applied physics letters 89 (11), 2006	58	2006
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz Acta Materialia 50 (6), 1275-1287, 2002	58	2002
InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization V Woods, N Dietz Materials Science and Engineering: B 127 (2-3), 239-250, 2006	53	2006
Heteroepitaxy of GaP on Si (100) KJ Bachmann, U Rossow, N Sukidi, H Castleberry, N Dietz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	49	1996
Stacking faults and twins in gallium phosphide layers grown on silicon V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz Philosophical Magazine A 82 (4), 685-698, 2002	44	2002
Orientation mediated self-assembled gallium phosphide islands grown on silicon V Narayanan, S Mahajan, N Sukidi, KJ Bachmann, V Woods, N Dietz Philosophical Magazine A 80 (3), 555-572, 2000	43	2000
p-Polarized reflectance spectroscopy: a highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions N Dietz, KJ Bachmann Vacuum 47 (2), 133-140, 1996	42	1996
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation B Tekcan, S Alkis, M Alevli, N Dietz, B Ortaç, N Biyikli, AK Okyay IEEE Electron Device Letters 35 (9), 936-938, 2014	41	2014
Defect identification in semiconductors by Brewster angle spectroscopy HJ Lewerenz, N Dietz Journal of applied physics 73 (10), 4975-4987, 1993	41	1993
Real-time optical characterization of thin film growth N Dietz Materials Science and Engineering: B 87 (1), 1-22, 2001	37	2001
Heteroepitaxy of lattice‐matched compound semiconductors on silicon KJ Bachmann, N Dietz, AE Miller, D Venables, JT Kelliher Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 …, 1995	35	1995
Real-time optical monitoring of ammonia flow and decomposition kinetics under high-pressure chemical vapor deposition conditions N Dietz, M Straßburg, V Woods Journal of Vacuum Science & Technology A 23 (4), 1221-1227, 2005	33	2005
Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy KJ Bachmann, N Dietz, AE Miller US Patent 5,552,327, 1996	33	1996

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