| Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates E Uccelli, J Arbiol, C Magen, P Krogstrup, E Russo-Averchi, M Heiss, ... Nano letters 11 (9), 3827-3832, 2011 | 167 | 2011 |
| The complex optical index of PbS nanocrystal thin films and their use for short wave infrared sensor design B Chehaibou, E Izquierdo, A Chu, C Abadie, M Cavallo, A Khalili, ... Nanoscale 14 (7), 2711-2721, 2022 | 20 | 2022 |
| Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera C Tubert, P Mellot, Y Desprez, C Mas, A Authié, L Simony, G Bochet, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 12 | 2021 |
| Modeling HgTe complex optical index from bulk to nanocrystal layers B Chehaibou, C Abadie, Y Prado, XZ Xu, G Vincent, B Gallas, G Mugny, ... The Journal of Physical Chemistry C 127 (28), 13789-13799, 2023 | 9 | 2023 |
| A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes R Helleboid, D Rideau, I Nicholson, J Grebot, B Mamdy, G Mugny, ... Journal of Physics D: Applied Physics 55 (50), 505102, 2022 | 9 | 2022 |
| Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes D Rideau, JR Manouvrier, V Quenette, B Mamdy, C Buj, J Grebot, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 8 | 2020 |
| Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements C Kriso, F Triozon, C Delerue, L Schneider, F Abbate, E Nolot, D Rideau, ... Solid-State Electronics 129, 93-96, 2017 | 8 | 2017 |
| Size and solvation effects on electronic and optical properties of PbS quantum dots B Sklénard, G Mugny, B Chehaibou, C Delerue, A Arnaud, J Li The Journal of Physical Chemistry Letters 13 (39), 9044-9050, 2022 | 7 | 2022 |
| Single photon avalanche diode with Monte Carlo simulations: PDE, jitter and quench probability D Rideau, Y Oussaiti, J Grebot, R Helleboid, A Lopez, G Mugny, ... 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 7 | 2021 |
| CMOS roadmap analysis from the perspective of III-V technology using MASTAR G Hiblot, Q Rafhay, G Mugny, G Ghibaudo, F Boeuf 2015 Silicon Nanoelectronics Workshop (SNW), 1-2, 2015 | 7 | 2015 |
| Electronic structure and electron mobility in Si1–xGex nanowires G Mugny, J Li, F Triozon, YM Niquet, D Rideau, C Delerue Applied Physics Letters 110 (5), 2017 | 6 | 2017 |
| Experimental and theoretical investigation of the ‘apparent’mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance D Rideau, F Monsieur, O Nier, YM Niquet, J Lacord, V Quenette, G Mugny, ... 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 6 | 2014 |
| Drift velocity versus electric field in⟨ 110⟩ Si nanowires: Strong confinement effects J Li, G Mugny, YM Niquet, C Delerue Applied Physics Letters 107 (6), 2015 | 4 | 2015 |
| Band structure of III-V thin films: An atomistic study of non-parabolic effects in confinement direction G Mugny, F Triozon, J Li, YM Niquet, G Hiblot, D Rideau, C Delerue EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 4 | 2015 |
| Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region FG Pereira, D Rideau, O Nier, C Tavernier, F Triozon, D Garetto, G Mugny, ... EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 4 | 2015 |
| Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing J Tillement, C Cervera, J Baylet, C Jany, F Nardelli, T Di Rito, S Georges, ... Sensors 23 (22), 9219, 2023 | 3 | 2023 |
| A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD G Mugny, FG Pereira, D Rideau, F Triozon, YM Niquet, M Pala, D Garetto, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 424-427, 2016 | 3 | 2016 |
| Full-zone k· p parametrization for III-As materials G Mugny, D Rideau, F Triozon, YM Niquet, C Kriso, FG Pereira, D Garetto, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 3 | 2015 |
| Compact model for inversion charge in III–V bulk MOSFET including non-parabolicity G Hiblot, G Mugny, Q Rafhay, F Boeuf, G Ghibaudo IEEE Transactions on Nanotechnology 14 (4), 768-775, 2015 | 3 | 2015 |
| Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs D Rideau, W Uhring, RA Bianchi, R Helleboid, G Mugny, J Grebot, ... ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | 2 | 2023 |
